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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N4403RLRAG

Name: 2N4403RLRAG
Brand: onsemi
SKU: 2N4403RLRAG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N4403RLRAG

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body, Formed Leads

Datasheet:: 2N4403RLRAG.pdf

Description:: TRANS PNP 40V 0.6A TO92

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2N4403RLRAG from onsemi is a PNP silicon general-purpose bipolar junction transistor (BJT) designed for linear amplification and switching applications in low-power analog and digital circuits. It features V_CEO = 40 V, I_C = 600 mA continuous, h_FE = 30–300 (at I_C = 0.1–150 mA), f_T = 200 MHz, and V_CE(sat) ≤ 0.75 V at I_C = 500 mA / I_B = 50 mA. It is commonly used in discrete amplifier stages, level shifters, and low-side switch drivers.

For engineers reviewing the 2N4403RLRAG datasheet, pinout, applications, or equivalent options, key selection considerations include its TO-92 package compatibility, Pb-free RoHS-compliant construction, guaranteed DC current gain across multiple bias points, switching speed (t_s ≤ 225 ns), and thermal resistance (R_JA = 200 °C/W).

Technical Context

The 2N4403RLRAG operates as a standard PNP BJT with emitter-grounded configuration in common-emitter topology. Its base-emitter junction is forward-biased to control collector current flow, supporting both active-region amplification and saturation-mode switching. The device exhibits well-characterized h-parameters (h_fe, h_ie, h_re, h_oe) at 1 kHz and 25°C, enabling predictable small-signal modeling.

It delivers verified switching performance under defined test conditions: t_d ≤ 15 ns, t_r ≤ 20 ns, t_s ≤ 225 ns, and t_f ≤ 30 ns at V_CC = 30 V, I_C = 150 mA, and I_B1/I_B2 = 15 mA. Its C_cb = 8.5 pF and C_eb = 30 pF support stable high-frequency operation up to 200 MHz f_T.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	40 V - Maximum allowable collector-to-emitter voltage before breakdown in open-base condition; defines safe operating voltage headroom in switching and amplifier designs.
I_C (continuous)	600 mA - Continuous collector current rating at T_A = 25°C; determines maximum load drive capability without derating.
h_FE range	30–300 - DC current gain span across I_C = 0.1–150 mA; enables robust bias design across production lots and temperature extremes.
f_T	200 MHz - Transition frequency at I_C = 20 mA, V_CE = 10 V; confirms suitability for RF preamp and wideband analog signal conditioning.
V_CE(sat)	≤ 0.75 V at I_C = 500 mA / I_B = 50 mA - Low saturation voltage minimizes conduction loss in switching applications such as relay drivers.
R_JA	200 °C/W - Junction-to-ambient thermal resistance in free-air; informs heatsinking requirements and power dissipation limits in PCB layout.
P_D @ T_A	625 mW - Maximum power dissipation at 25°C ambient; derates by 5.0 mW/°C above 25°C for thermal safety margining.

Pinout & Package

2N4403RLRAG is housed in a TO-92 plastic package (Case 29-11), with leads bent and supplied in tape-and-reel format (2000 units/reel). The package is Pb-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Emitter terminal of PNP transistor	Reference node for current sourcing; connected to higher potential (e.g., V_CC) in common-emitter configurations.
2 (Base)	Control electrode	Accepts reverse-bias current to turn on the transistor; requires current-limiting resistor in most driver circuits.
3 (Collector)	Output current terminal	Sinks load current when active; typically connected to ground or low-side loads in switching applications.

Key Features

Feature	Design Value
PNP polarity with 40 V V_CEO	Enables high-side switching and complementary pair use with NPN devices like 2N4401 in push-pull output stages.
Guaranteed h_FE ≥ 30 at I_C = 0.1 mA	Ensures reliable turn-on in low-current bias networks, including microcontroller GPIO-driven switches and sensor interface circuits.
Low V_BE(sat) ≤ 0.95 V at I_C = 150 mA	Reduces base drive power requirement and improves efficiency in battery-powered discrete logic and LED driver applications.
200 MHz f_T and 8.5 pF C_cb	Supports stable small-signal amplification up to VHF band, suitable for IF amplifiers and oscillator buffer stages.
TO-92 package with Pb-free finish	Enables manual prototyping, through-hole rework, and compliance with global environmental regulations without solderability compromise.

Applications

Audio Pre-amplifier Stage	Discrete Logic Level Shifter
Use Scenario: Amplifying weak microphone or line-level signals in portable audio equipment before ADC sampling. IC Role / Device Role / Timing Role: PNP BJT configured in common-emitter topology for voltage gain with DC-coupled input and emitter-degenerated bias. Use Value: h_FE stability across 0.1–10 mA ensures consistent gain; low noise figure (<10 dB at 1 kHz) preserves signal integrity in front-end stages.	Use Scenario: Converting 3.3 V logic outputs to 5 V or 12 V compatible levels for legacy peripherals or optocoupler inputs. IC Role / Device Role / Timing Role: Saturated PNP switch with base driven by MCU GPIO; collector pulls up target rail via external pull-up. Use Value: V_CE(sat) ≤ 0.4 V at I_C = 150 mA ensures minimal voltage drop and fast edge transitions (t_r/t_f < 30 ns).
Relay Driver Circuit	Current Mirror Reference
Use Scenario: Driving 5–12 V electromagnetic relays in industrial control panels where microcontroller I/O cannot source sufficient current. IC Role / Device Role / Timing Role: Low-side PNP switch sinking relay coil current; emitter tied to supply, collector to coil, base controlled via current-limiting resistor. Use Value: I_C = 600 mA rating supports typical 400–500 mA relay coils; R_JA = 200 °C/W allows operation without heatsink at ambient ≤ 50°C.	Use Scenario: Building precision two-transistor current mirror for biasing op-amp input stages or setting reference currents in analog ICs. IC Role / Device Role / Timing Role: Matched PNP pair (with 2N4401 or same-family NPN) providing mirrored current with <5% error over −55°C to +125°C. Use Value: Tight h_FE distribution and low V_BE variation (±2 mV) enable accurate mirroring; C_eb = 30 pF stabilizes AC response in feedback loops.

Audio Pre-amplifier Stage

Discrete Logic Level Shifter

Use Scenario: Amplifying weak microphone or line-level signals in portable audio equipment before ADC sampling.

IC Role / Device Role / Timing Role: PNP BJT configured in common-emitter topology for voltage gain with DC-coupled input and emitter-degenerated bias.

Use Value: h_FE stability across 0.1–10 mA ensures consistent gain; low noise figure (<10 dB at 1 kHz) preserves signal integrity in front-end stages.

Use Scenario: Converting 3.3 V logic outputs to 5 V or 12 V compatible levels for legacy peripherals or optocoupler inputs.

IC Role / Device Role / Timing Role: Saturated PNP switch with base driven by MCU GPIO; collector pulls up target rail via external pull-up.

Use Value: V_CE(sat) ≤ 0.4 V at I_C = 150 mA ensures minimal voltage drop and fast edge transitions (t_r/t_f < 30 ns).

Relay Driver Circuit

Current Mirror Reference

Use Scenario: Driving 5–12 V electromagnetic relays in industrial control panels where microcontroller I/O cannot source sufficient current.

IC Role / Device Role / Timing Role: Low-side PNP switch sinking relay coil current; emitter tied to supply, collector to coil, base controlled via current-limiting resistor.

Use Value: I_C = 600 mA rating supports typical 400–500 mA relay coils; R_JA = 200 °C/W allows operation without heatsink at ambient ≤ 50°C.

Use Scenario: Building precision two-transistor current mirror for biasing op-amp input stages or setting reference currents in analog ICs.

IC Role / Device Role / Timing Role: Matched PNP pair (with 2N4401 or same-family NPN) providing mirrored current with <5% error over −55°C to +125°C.

Use Value: Tight h_FE distribution and low V_BE variation (±2 mV) enable accurate mirroring; C_eb = 30 pF stabilizes AC response in feedback loops.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MPSA92	Higher V_CEO = 300 V, lower I_C = 500 mA, f_T = 50 MHz; TO-92 package, same pinout.	Better suited for high-voltage switching (e.g., flyback snubbers); less optimal for high-speed or high-current switching.	Select MPSA92 only when >100 V blocking is required; not recommended for 2N4403RLRAG's 40 V, 600 mA use cases.
BC557B	Lower V_CEO = 45 V, I_C = 100 mA, h_FE = 200–450; TO-92, same pinout but different gain binning.	Optimized for low-noise, low-current amplification; insufficient for >200 mA load switching.	Choose BC557B for low-power signal amplification only; avoid in relay or LED driver roles requiring >200 mA.

Compared with MPSA92 and BC557B, the 2N4403RLRAG uniquely balances 40 V breakdown, 600 mA current handling, 200 MHz f_T, and TO-92 manufacturability-making it the preferred choice for cost-sensitive, medium-speed, medium-current PNP switching and amplification where reliability and availability are critical.

Availability

2N4403RLRAG is available at Aetrix Electronics and suitable for discrete amplifier design, relay driver implementation, logic level translation, and current mirror reference circuits requiring stable component supply and long-term manufacturability.

Supply support for 2N4403RLRAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, medical, and IoT applications.

The 2N4403RLRAG belongs to onsemi's legacy general-purpose bipolar transistor product line, engineered for broad utility in discrete analog and digital circuit design where proven reliability, wide gain distribution, and standardized packaging are essential.

FAQ

What is the maximum continuous collector current rating for the 2N4403RLRAG?

The 2N4403RLRAG has a maximum continuous collector current (I_C) rating of 600 mA at T_A = 25°C. This rating decreases linearly with ambient temperature at 5.0 mW/°C above 25°C due to its 625 mW total device dissipation limit. Designers must verify thermal margins using R_JA = 200 °C/W when operating near this current in real-world enclosures.

Does the 2N4403RLRAG have Pb-free and RoHS-compliant packaging?

Yes, the 2N4403RLRAG is explicitly marked as Pb-free in onsemi's ordering information and conforms to RoHS Directive 2011/65/EU. Its TO-92 package uses lead-free molding compound and termination finishes, validated per J-STD-020 moisture sensitivity level (MSL) 1 and JEDEC standard soldering profiles.

What is the guaranteed DC current gain (h_FE) range for the 2N4403RLRAG at I_C = 10 mA?

At I_C = 10 mA and V_CE = 1.0 V, the 2N4403RLRAG guarantees h_FE ≥ 100 (minimum) per onsemi's Electrical Characteristics table. This value is tested and binned during production, ensuring predictable bias point stability in amplifier and switch driver designs across temperature and unit variance.

Can the 2N4403RLRAG be used as a direct replacement for the 2N4403 in existing designs?

Yes, the 2N4403RLRAG is functionally and pin-compatible with the base 2N4403, sharing identical electrical specifications, TO-92 package dimensions, and pinout (Emitter-Base-Collector on pins 1-2-3). The "RLRAG" suffix denotes tape-and-reel packaging and Pb-free construction-no circuit or layout changes are needed for migration.

What are the storage and operating temperature limits for the 2N4403RLRAG?

The 2N4403RLRAG supports an operating and storage junction temperature range of −55°C to +150°C. This wide range enables deployment in automotive under-hood modules, industrial motor controls, and outdoor instrumentation where ambient extremes exceed commercial-grade limits.

2N4403RLRAG Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body, Formed Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 600 mA

Voltage - Collector Emitter Breakdown (Max):: 40 V

Vce Saturation (Max) @ Ib, Ic:: 750mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 150mA, 2V

Power - Max:: 625 mW

Frequency - Transition:: 200MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92 (TO-226)

2N4403RLRAG FAQ

1.How can I place an order for 2N4403RLRAG through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N4403RLRAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N4403RLRAG reliable?

The price and inventory of 2N4403RLRAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N4403RLRAG is usually 5 days.

3.What payment methods are accepted for 2N4403RLRAG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N4403RLRAG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N4403RLRAG?

2N4403RLRAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N4403RLRAG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N4403RLRAG?

For technical support, including 2N4403RLRAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N4403RLRAG requirements.

6.How does Aetrix verify that 2N4403RLRAG is sourced from the original manufacturer or authorized distributors?

All 2N4403RLRAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N4403RLRAG meets industry standards.

7.What is the process for return or replacement of 2N4403RLRAG?

All 2N4403RLRAG units undergo pre-shipment inspection (PSI). If there is an issue with 2N4403RLRAG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N4403RLRAG part is unused and in its original packaging.

Return procedure for 2N4403RLRAG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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