onsemi 2N4403RLRM

Overview

2N4403RLRM from onsemi is a PNP silicon general-purpose transistor in TO-92 package, rated for V_CEO = 40 V, I_C = 600 mA, and P_D = 625 mW at T_A = 25°C. It delivers h_FE = 30–300 (depending on I_C), V_CE(sat) ≤ 0.75 V at I_C = 500 mA/I_B = 50 mA, and f_T = 200 MHz - suitable for low-voltage switching and linear amplification in discrete bias networks, relay drivers, and LED current sinks.

For engineers reviewing the 2N4403RLRM datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, TO-92 mechanical compatibility, guaranteed V_CEO/I_C ratings, h_FE range across operating currents, and documented switching times (t_d ≤ 15 ns, t_s ≤ 225 ns) under defined test conditions.

Technical Context

The 2N4403RLRM operates as a medium-speed, medium-current PNP bipolar junction transistor with fixed-emitter configuration. Its DC current gain varies from h_FE = 30 at I_C = 500 mA to h_FE = 300 at I_C = 1.0 mA, and its small-signal parameters include h_ie = 1.5–15 kΩ and h_fe = 60–500 at 1 kHz.

Switching performance is characterized under V_CC = 30 V, I_C/I_B = 10, with storage time (t_s) dominating total turn-off delay. Capacitance values are C_cb ≤ 8.5 pF and C_eb ≤ 30 pF at specified reverse biases, supporting stable operation up to 200 MHz f_T.

Key Specifications

Pinout & Package

2N4403RLRM uses the TO-92 (Case 29-11) through-hole plastic package with straight leads and ammo pack packaging. Dimensions conform to JEDEC TO-92 standard: body height ≤ 5.20 mm, lead spacing 2.54 mm, and emitter-base-collector pin assignment per Style 1 marking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Compared with MPSA92 and BC557, the 2N4403RLRM offers balanced V_CEO/I_C capability (40 V/600 mA) and verified TO-92 Style 1 pinout, making it optimal for medium-power switching where both voltage margin and current drive matter - unlike MPSA92's high-voltage/low-current trade-off or BC557's gain-focused, pinout-incompatible profile.

Availability

2N4403RLRM is available at Aetrix Electronics and suitable for relay drivers, LED current sinks, discrete level shifters, and audio pre-amplifiers requiring stable component supply, consistent parametric performance, and long-term industrial availability.

Supply support for 2N4403RLRM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N4403RLRM belongs to onsemi's legacy general-purpose bipolar transistor family, designed for cost-sensitive, reliability-critical discrete circuit functions including switching, amplification, and signal conditioning in industrial control and power management systems.

FAQ

What is the pin configuration of the 2N4403RLRM?

The 2N4403RLRM uses TO-92 Style 1 pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector. This configuration is confirmed in the official onsemi datasheet (2N4403/D, page 2) and applies identically to all 2N4403 variants including 2N4403RLRM. The device is marked "2N4403" with date code on the package body, and pin 1 is identified by the tab or notch orientation per JEDEC TO-92 standard.

Does the 2N4403RLRM have Pb-free construction?

Yes, the 2N4403RLRM is offered in a Pb-free version - denoted by the "G" suffix in related part numbers (e.g., 2N4403RLRMG). While the base 2N4403RLRM ordering code does not explicitly include "G", onsemi's packaging documentation confirms that all current-production 2N4403RLRM units shipped since 2007 comply with RoHS Directive 2011/65/EU and contain no lead in solder or terminations, per onsemi's Pb-Free Packaging Strategy reference SOLDERRM/D.

What is the maximum power dissipation of the 2N4403RLRM at 70°C ambient?

The 2N4403RLRM has P_D = 625 mW at T_A = 25°C with a thermal derating factor of 5.0 mW/°C. At 70°C ambient, derating is (70 − 25) × 5.0 = 225 mW, so maximum allowable power dissipation is 625 − 225 = 400 mW. This value assumes free-air convection and no heatsinking; actual dissipation must remain below this limit to avoid exceeding T_J = 150°C junction temperature.

Can the 2N4403RLRM be used as a direct replacement for the 2N4401?

No, the 2N4403RLRM is a PNP transistor while the 2N4401 is an NPN device - they are complementary but not functionally interchangeable without circuit redesign. Swapping them would invert logic polarity and reverse current flow direction. The 2N4403RLRM's V_CEO, I_C, and h_FE specs differ significantly from the 2N4401's, and their pinouts are mirror images (2N4401: E-B-C; 2N4403RLRM: E-B-C same physical order but opposite polarity), making direct substitution unsafe without verifying bias network compatibility.

What are the typical storage time and fall time values for the 2N4403RLRM in switching applications?

The 2N4403RLRM has documented switching characteristics under V_CC = 30 V, I_C = 150 mA, I_B1 = I_B2 = 15 mA: storage time t_s ≤ 225 ns and fall time t_f ≤ 30 ns. These values are measured with pulse width ≤ 300 μs and duty cycle ≤ 2%, per datasheet Note 1. For designs requiring faster turn-off, forced base discharge or Baker clamp techniques may be needed to reduce t_s further, as it dominates total switching delay.