onsemi 2N4410

Overview

2N4410 from Fairchild Semiconductor is an NPN general-purpose amplifier transistor designed for low-to-medium current switching and linear amplification up to 200 mA collector current, with 80 V V_CEO, 120 V V_CBO, and 5.0 V V_EBO, commonly used in signal conditioning stages of industrial control interfaces and discrete logic-level translators.

For engineers reviewing the 2N4410 datasheet, pinout, applications, or equivalent options, key selection criteria include its TO-92 package, DC current gain (h_FE) of 60–400 at 1–10 mA, saturation voltages (V_CE(sat) ≤ 0.2 V, V_BE(sat) ≤ 0.8 V), thermal resistance (R_θJA = 200 °C/W), and breakdown voltage margins for 24 V and 48 V system interfacing.

Technical Context

The 2N4410 operates as a silicon planar epitaxial NPN bipolar junction transistor fabricated using Fairchild's Process 16, optimized for stable DC gain and low saturation voltage across ambient temperatures from –55 °C to +150 °C. Its small-signal current gain (h_fe) reaches 2.0–10 at 10 mA and 10 V V_CE with 30 MHz test frequency.

It supports both analog amplification and digital switching functions, with verified OFF-state leakage (ICBO ≤ 10 nA at 25 °C, ≤ 1.0 µA at 100 °C) and input/output capacitances (C_ob = 12 pF, C_ib = 50 pF) suitable for audio-frequency and low-speed digital signal paths.

Key Specifications

Pinout & Package

2N4410 is housed in a standard through-hole TO-92 plastic package with straight leads and no lead clip. Pin identification follows JEDEC TO-92 orientation: flat side facing viewer, leads down, left-to-right = Emitter (E), Base (B), Collector (C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Compared with 2N4410, the 2N2222A offers tighter h_FE consistency but reduced voltage safety margin, while the BC547B trades 125 mW dissipation headroom for higher gain-making the 2N4410 optimal for 48 V industrial switching where both voltage and thermal robustness are critical.

Availability

2N4410 is available at Aetrix Electronics and suitable for industrial sensor interfaces, discrete logic-level translation, and audio pre-amplifier stages requiring stable component supply, long-term obsolescence resilience, and through-hole manufacturing compatibility.

Supply support for 2N4410 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016; its legacy products remain widely deployed in industrial and automotive systems.

The 2N4410 belongs to Fairchild's general-purpose bipolar transistor family engineered for reliability in industrial control, instrumentation, and repair applications where proven performance and mechanical interchangeability outweigh cutting-edge specs.

FAQ

What is the maximum continuous collector current rating for the 2N4410?

The 2N4410 has a maximum continuous collector current (I_C) rating of 200 mA at T_A = 25 °C. This rating assumes adequate PCB copper area for heat dissipation; derating applies above 25 °C per the 5.0 mW/°C thermal coefficient. The device is typically applied at ≤50 mA for general-purpose amplification and switching to ensure long-term reliability and thermal stability.

Does the 2N4410 have a documented pinout configuration for TO-92 packages?

Yes, the 2N4410 uses the standard JEDEC TO-92 pinout: when viewing the flat side of the package with leads pointing downward, the left-to-right pin order is Emitter (E), Base (B), Collector (C). This matches the pinout of industry-standard NPN transistors including the 2N2222A and BC547, enabling direct physical substitution in most through-hole layouts.

What is the typical DC current gain (h_FE) of the 2N4410 at 10 mA collector current?

The 2N4410 exhibits a DC current gain (h_FE) ranging from 60 to 400 at V_CE = 1.0 V and I_C = 10 mA. The wide spread reflects process variation across batches; design should accommodate the minimum value (60) for worst-case base drive calculations, especially in saturated switching applications where gain margin ensures full turn-on.

Can the 2N4410 be used in place of a 2N2222A in existing designs?

Yes, the 2N4410 can replace a 2N2222A in many cases due to identical TO-92 packaging and overlapping gain/bias characteristics. However, the 2N4410's higher V_CEO (80 V vs. 40 V) and V_CBO (120 V vs. 60 V) provide greater voltage margin-making it safer in inductive or higher-voltage applications-but its h_FE distribution is broader, so verification of base drive sufficiency is recommended for critical switching.

What is the thermal resistance from junction to ambient (R_θJA) for the 2N4410 in free-air conditions?

The 2N4410 has a specified R_θJA of 200 °C/W under free-air conditions (no heatsink, minimal PCB copper). This value defines the temperature rise per watt of dissipated power: at 625 mW maximum dissipation, junction temperature rises ~125 °C above ambient. For sustained operation near rated power, PCB layout must include thermal relief pads and copper pours to reduce effective R_θJA.