NXP Semiconductors 2N5064,112

Overview

2N5064,112 from Nexperia (formerly Philips Semiconductors) is a sensitive-gate silicon-controlled rectifier (SCR) in TO-92 plastic package, rated for 200 V repetitive peak off-state voltage, 0.5 A average on-state current, and 10 A non-repetitive surge current. It interfaces directly with microcontrollers and low-power logic circuits for AC phase control in lighting dimmers and small appliance motor speed regulation.

For engineers reviewing the 2N5064,112 datasheet, 2N5064,112 pinout, 2N5064,112 application, or 2N5064,112 equivalent, key selection criteria include gate trigger sensitivity (≤200 µA), latching/holding current (6 mA / 5 mA), thermal resistance (75 K/W junction-to-case), and compatibility with half-sine wave conduction at Tc ≤ 67 °C.

Technical Context

This SCR operates as a unidirectional, gate-triggered power switch requiring only minimal gate drive-IGT ≤ 200 µA at 25 °C-to initiate conduction. Its sensitive gate enables direct interface with TTL/CMOS outputs without external amplification.

It exhibits critical dV/dt immunity of ≥25 V/µs at 125 °C and circuit-commutated turn-off time tq ≤ 100 µs under specified load conditions, supporting reliable commutation in resistive and inductive phase-control topologies.

Key Specifications

Pinout & Package

Package: TO-92 plastic envelope (JEDEC TO-92 variant), flat-side-down mounting, net mass 0.2 g, UL94 V0 compliant epoxy.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SCR switching applications.

Compared with BT169G,112 and 2N5060,112, the 2N5064,112 provides optimal balance of 200 V blocking, microcontroller-compatible gate drive, and thermal performance for 120 VAC general-purpose phase control-neither over-specified nor under-rated for its target use cases.

Availability

2N5064,112 is available at Aetrix Electronics and suitable for AC lighting dimmers, small appliance motor controllers, heating element regulators, and industrial solenoid drivers requiring stable component supply across production lifecycles.

Supply support for 2N5064,112 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions with focus on efficiency, miniaturization, and automotive-grade quality.

The 2N5064,112 belongs to Nexperia's legacy sensitive-gate SCR family designed specifically for cost-sensitive, low-power AC phase-control applications in consumer and industrial equipment.

FAQ

What is the maximum repetitive peak off-state voltage for the 2N5064,112?

The 2N5064,112 has a maximum repetitive peak off-state voltage (VDRM and VRRM) of 200 V. This rating defines the highest AC line voltage the device can block in its off-state without unintended conduction. It is validated per IEC 134 limiting values and applies under standard test conditions with proper heatsinking and gate biasing.

Can the 2N5064,112 be driven directly by a 3.3 V microcontroller GPIO pin?

Yes, the 2N5064,112 can be driven directly by a 3.3 V microcontroller GPIO pin because its gate trigger current (IGT) is ≤200 µA at 25 °C and gate trigger voltage (VGT) is ≤0.8 V. With appropriate series gate resistor (e.g., 1–10 kΩ), the 2N5064,112 reliably latches without external amplification.

What is the thermal resistance junction-to-case for the 2N5064,112?

The thermal resistance junction-to-case (Rth j-c) for the 2N5064,112 is 75 K/W, measured with the case mounted flat-side-down on a heatsink and clamped per the datasheet note. This value is essential for calculating maximum allowable power dissipation under continuous conduction with a given heatsink temperature.

How does the 2N5064,112 behave at elevated temperatures?

At elevated temperatures, the 2N5064,112 shows increased gate trigger current (IGT ≤350 µA at −65 °C, but rises with junction temperature), reduced holding current (IH = 5 mA at 25 °C, lower at higher Tj), and decreased dV/dt immunity. Its maximum operating junction temperature is 125 °C, and off-state leakage current increases to 50 µA at that temperature.

Is the 2N5064,112 suitable for zero-crossing switched AC applications?

The 2N5064,112 is not optimized for zero-crossing switching due to its inherent latching behavior and finite turn-off time (tq ≤ 100 µs). It is intended for phase-angle control where gate timing determines conduction angle. For true zero-crossing operation, a triac or zero-crossing SSR is preferred over the 2N5064,112.