onsemi 2N5086BU

Overview

2N5086BU from ON Semiconductor is a PNP general-purpose amplifier transistor designed for low-level, high-gain, low-noise signal amplification at collector currents up to 50 mA. It features V_CEO = −50 V, h_FE = 150–500 (at I_C = −100 µA to −10 mA), f_T = 40 MHz, and V_CE(sat) = −0.3 V (I_C = −10 mA, I_B = −1.0 mA), commonly used in audio preamplifier stages and sensor interface circuits.

For engineers reviewing the 2N5086BU datasheet, pinout, applications, or equivalent options, key selection considerations include its PNP polarity, TO-92 package, −50 V breakdown rating, low noise figure (NF = 3.0 dB at I_C = −100 µA), and suitability for low-current analog gain blocks where thermal stability and gain consistency across temperature are critical.

Technical Context

The 2N5086BU operates as a silicon PNP bipolar junction transistor with common-emitter configuration. Its design emphasizes high DC current gain (h_FE) over wide collector current range (−100 µA to −10 mA) and low noise performance at sub-mA bias points, supported by specified NF = 3.0 dB (R_S = 3.0 kΩ, f = 1 kHz).

Thermal performance is defined for FR-4 PCB mounting: R_θJA = 200 °C/W and P_D = 625 mW at T_A = 25 °C, derating linearly at 5.0 mW/°C above ambient. Junction temperature is limited to 150 °C, consistent with industrial-grade reliability requirements.

Key Specifications

Pinout & Package

2N5086BU is housed in a through-hole TO-92 package with standardized lead configuration: Lead 1 = Emitter, Lead 2 = Base, Lead 3 = Collector. The package provides mechanical robustness and thermal performance suitable for manual assembly and reflow-compatible wave soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose amplifier applications.

Compared with 2N5087 and MMBT5087, the 2N5086BU provides the lowest nominal h_FE band (150–500) and highest power dissipation (625 mW) in TO-92, making it optimal for thermally demanding, moderate-gain analog stages where gain predictability and thermal headroom outweigh maximum gain.

Availability

2N5086BU is available at Aetrix Electronics and suitable for audio preamplifiers, sensor interface circuits, and low-power bias generator designs requiring stable component supply and long-term industrial availability.

Supply support for 2N5086BU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global supplier of energy-efficient semiconductor solutions, specializing in analog, power management, and discrete devices for industrial, automotive, and consumer markets.

The 2N5086BU belongs to ON Semiconductor's legacy general-purpose bipolar transistor product line, engineered for high-fidelity analog signal amplification in cost-sensitive, reliability-critical applications where discrete gain elements remain preferred over integrated alternatives.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5086BU?

The 2N5086BU has a maximum collector-emitter voltage rating (V_CEO) of −50 V. This value is confirmed in the Absolute Maximum Ratings table and applies at T_A = 25 °C with I_B = 0. Exceeding this voltage risks irreversible breakdown. Derating is not specified beyond the standard junction temperature limit of 150 °C, so system-level transient protection must be implemented externally if operating near this limit.

Does the 2N5086BU have a specified noise figure, and under what conditions?

Yes, the 2N5086BU has a specified noise figure (NF) of 3.0 dB. This value is measured at I_C = −100 µA, V_CE = −5.0 V, R_S = 3.0 kΩ, and f = 1.0 kHz. The datasheet also lists an alternate NF = 3.0 dB condition at I_C = −20 µA, R_S = 10 kΩ, and f = 10 Hz to 15.7 kHz. These values confirm the 2N5086BU's suitability for low-noise amplification in precision analog front-ends.

What is the DC current gain (h_FE) range for the 2N5086BU, and how does it vary with collector current?

The 2N5086BU exhibits h_FE = 150–500 across three test conditions: 150 at I_C = −100 µA, 150 at I_C = −1.0 mA, and 150 at I_C = −10 mA (all at V_CE = −5.0 V). The upper bound reaches 500 at I_C = −10 mA. This wide gain spread reflects typical bipolar process variation and requires circuit-level compensation-such as emitter degeneration-when gain stability is critical in the 2N5086BU design.

What package type is used for the 2N5086BU, and what are its key mechanical dimensions?

The 2N5086BU uses the TO-92 package, a standardized 3-lead through-hole plastic package. Key dimensions include overall length 4.58 ±0.20 mm, width 3.60 ±0.20 mm, height 4.58^+0.25_−0.15 mm, and lead spacing 1.27 ±0.20 mm (pitch). The marking "2Q" appears on the package body. These dimensions align with JEDEC TO-92 standards and ensure compatibility with standard PCB footprints and wave-soldering processes.

How does the 2N5086BU compare to the 2N5087 in terms of DC current gain and application suitability?

The 2N5086BU and 2N5087 share identical package, pinout, absolute maximum ratings, and thermal characteristics-but differ in h_FE: 2N5086BU specifies 150–500, while 2N5087 specifies 250–800. Both exhibit identical noise figures and saturation voltages. Therefore, the 2N5086BU is preferred when moderate, tightly bounded gain is required (e.g., in feedback-stabilized amplifiers), whereas the 2N5087 suits higher-gain, low-bias applications like microphone preamps where maximum sensitivity is prioritized.