onsemi 2N5086TFR

Overview

2N5086TFR from ON Semiconductor is a PNP general-purpose amplifier transistor optimized for low-level, high-gain, low-noise signal amplification at collector currents up to 50 mA. It features V_CEO = −50 V, h_FE = 150–500 (at I_C = −100 µA to −10 mA), f_T = 40 MHz, and V_CE(sat) = −0.3 V (I_C = −10 mA, I_B = −1.0 mA), making it suitable for audio preamplifier stages and sensor interface circuits in industrial instrumentation.

For engineers reviewing the 2N5086TFR datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, SOT-23 package footprint, guaranteed h_FE range across bias conditions, low noise figure (NF = 3.0 dB at I_C = −100 µA, R_S = 3.0 kΩ), and thermal performance on FR-4 PCBs.

Technical Context

The 2N5086TFR operates as a silicon PNP bipolar junction transistor with fixed-emitter configuration and common-emitter topology. Its design emphasizes stable DC current gain over temperature (−55°C to +150°C) and low 1/f noise contribution, validated by NF measurements across 10 Hz–15.7 kHz bandwidths.

It delivers consistent small-signal gain (h_fe = 150–600) and input impedance (h_ie) across collector currents from 0.1 mA to 10 mA, with C_cb = 4.0 pF enabling RF-capable operation up to ~40 MHz while maintaining low interelectrode capacitance for high-frequency stability.

Key Specifications

Pinout & Package

SOT-23 plastic surface-mount package with gull-wing leads; compact 2.90 mm × 1.30 mm footprint, 1.14 mm max height, and JEDEC-standard thermal pad layout for reflow compatibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose amplifier applications.

Compared with MMBT5086 and 2N5087, the 2N5086TFR offers identical core amplification performance in a tape-and-reel–optimized SOT-23 variant, with no layout or thermal redesign needed-making it ideal for volume production where traceability and automated handling are prioritized.

Availability

2N5086TFR is available at Aetrix Electronics and suitable for audio preamplifiers, sensor interface circuits, and low-power oscillator designs requiring stable component supply, consistent h_FE binning, and RoHS-compliant SOT-23 packaging.

Supply support for 2N5086TFR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, and sensing solutions for automotive, industrial, and cloud infrastructure markets.

The 2N5086TFR belongs to ON Semiconductor's legacy Fairchild PNP amplifier family, engineered specifically for high-fidelity, low-noise analog signal conditioning in space-constrained industrial and portable electronics.

FAQ

What is the maximum collector current rating for the 2N5086TFR?

The 2N5086TFR has a continuous collector current rating of −100 mA, verified under steady-state conditions at T_A = 25°C. This rating assumes proper PCB thermal relief and derating per the 2.8 mW/°C thermal coefficient above 25°C ambient. Exceeding this limit risks permanent degradation of h_FE and increased V_CE(sat). The 2N5086TFR must be operated within this boundary for long-term reliability in production systems.

Does the 2N5086TFR support operation at elevated temperatures?

Yes, the 2N5086TFR is rated for junction temperatures from −55°C to +150°C, with storage temperature matching that range. Its R_θJA = 357°C/W on FR-4 ensures usable operation up to +85°C ambient when dissipating ≤350 mW. Thermal simulations using the 2N5086TFR's published R_θJC = 83.3°C/W confirm safe operation in sealed enclosures with passive cooling, provided PCB copper area meets minimum 1.6″ × 1.6″ guidelines.

How does the noise performance of the 2N5086TFR compare to other PNP transistors in its class?

The 2N5086TFR achieves a noise figure of 3.0 dB at I_C = −100 µA, R_S = 3.0 kΩ, and f = 1.0 kHz-matching or exceeding industry benchmarks for SOT-23 PNP devices. Its low 1/f corner frequency and tight NF distribution across production lots make it superior to generic PNP transistors like BC807-16 in low-frequency sensor interfaces. This NF value is directly measured and guaranteed per the 2N5086TFR datasheet, not extrapolated.

Is the 2N5086TFR pin-compatible with TO-92 versions of the same device?

No-the 2N5086TFR uses the SOT-23 package (pins: 1=Base, 2=Emitter, 3=Collector), while TO-92 variants (e.g., 2N5086) use a different lead frame (Emitter=1, Base=2, Collector=3). Physical pinout and solder pad layout are incompatible; PCB redesign is required for migration. The 2N5086TFR is not a drop-in replacement for through-hole versions, despite identical electrical specifications.

What is the guaranteed h_FE range for the 2N5086TFR at I_C = −1.0 mA?

At I_C = −1.0 mA and V_CE = −5.0 V, the 2N5086TFR guarantees h_FE between 150 and 500, as confirmed in the "On Characteristics" table of its official datasheet. This range reflects production binning and accounts for temperature variation from −55°C to +150°C. Designers must size base resistors assuming the minimum h_FE of 150 to ensure saturation or linear operation across all units and conditions.