Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi 2N5087_J61Z

Part No.:
2N5087_J61Z
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Datasheet:
Aetrix2N5087_J61Z.pdf
Description:
TRANS PNP 50V 0.1A TO-92-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,429

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2N5087_J61Z from ON Semiconductor (formerly Fairchild) is a PNP silicon epitaxial planar transistor designed for low-level, high-gain, low-noise general-purpose amplifier applications up to 50 mA collector current. It features a DC current gain (hFE) of 250 at −1.0 mA IC, VCE = −5.0 V; VCEO = −50 V; fT = 40 MHz; and noise figure of 2.0 dB at IC = −20 µA, RS = 10 kΩ, 10 Hz–15.7 kHz bandwidth - optimized for audio preamplifier and sensor signal conditioning stages.

For engineers reviewing the 2N5087_J61Z datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, TO-92 package mechanical compatibility, −50 V breakdown rating, 250 minimum hFE at low bias, and sub-2 dB noise performance in high-impedance source configurations.

Technical Context

This device operates as a linear PNP bipolar junction transistor with fixed-emitter common configuration. Its design emphasizes low-noise amplification at collector currents from 10 µA to 50 mA, supported by a 40 MHz fT, 4.0 pF Ccb, and tightly specified hFE range (250–800) across bias conditions. Junction temperature is rated to +150°C with thermal resistance RθJA = 357°C/W on FR-4 PCB.

The 2N5087_J61Z shares electrical specifications and package footprint with the 2N5086 and MMBT5087 variants but is distinguished by its guaranteed minimum hFE of 250 at −1.0 mA IC, making it suitable for precision analog gain stages where consistent current amplification is required without active bias compensation.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −50 V - Maximum safe collector-emitter voltage before breakdown; enables use in −48 V telecom bias rails or dual-supply audio stages.
hFE (min) 250 at IC = −1.0 mA, VCE = −5.0 V - Ensures predictable gain in low-current microphone preamps and photodiode transimpedance amplifiers.
fT 40 MHz - Supports stable small-signal amplification up to mid-audio frequencies with margin for feedback loop stability.
NF 2.0 dB at IC = −20 µA, RS = 10 kΩ, 10 Hz–15.7 kHz - Confirmed low-noise operation for high-Z sensor interfaces like piezoelectric pickups.
PD 350 mW at TA = 25°C - Sufficient for Class-A biasing in discrete headphone drivers or line-level buffers without heatsinking.
Ccb 4.0 pF at VCB = −5.0 V - Limits Miller effect in common-emitter gain stages, aiding bandwidth predictability in multi-stage designs.

Pinout & Package

2N5087_J61Z is housed in a TO-92 plastic package (JEDEC TO-226AA), with leads arranged in straight-line configuration and standard lead-forming for through-hole PCB assembly. The package provides mechanical robustness and thermal dissipation suitable for industrial and consumer-grade analog circuits.

Pin Circuit Role Design Meaning
1 Emitter Current sink terminal; connected to most positive supply rail in PNP common-emitter amplifier configurations.
2 Base Control input; requires negative bias relative to emitter to forward-bias base-emitter junction and enable conduction.
3 Collector Output terminal; carries amplified current to load; reverse-biased relative to emitter during active operation.

Key Features

Feature Design Value
Low-noise amplification 2.0 dB NF at 10 Hz–15.7 kHz with 10 kΩ source impedance - directly supports high-fidelity audio front-ends and precision instrumentation.
High DC current gain Minimum hFE = 250 at −1.0 mA ensures stable bias point in emitter-degenerated amplifiers without trimming resistors.
Wide fT bandwidth 40 MHz fT allows flat small-signal response beyond 20 kHz with adequate phase margin in unity-gain stable configurations.
Robust voltage ratings −50 V VCEO and VCBO support operation in −48 V telecom systems and industrial control backplanes.

Applications

Audio Preamp Stage Photodiode Transimpedance Amplifier

Use Scenario: Low-noise amplification of dynamic microphone output signals prior to ADC sampling.

IC Role / Device Role / Timing Role: PNP small-signal amplifier in common-emitter configuration with emitter degeneration for linearity.

Use Value: 2.0 dB noise figure and 250 hFE ensure ≥90 dB SNR at 1 mV input with 10 kΩ source impedance.

Use Scenario: Converting weak photocurrent from ambient-light sensors into measurable voltage.

IC Role / Device Role / Timing Role: Discrete PNP transistor in transimpedance feedback loop with op-amp.

Use Value: Low Ccb (4.0 pF) minimizes phase lag in high-gain feedback paths, preserving stability at >100 kHz.

Industrial Sensor Signal Conditioning Legacy Telecom Line Interface

Use Scenario: Amplifying millivolt-level thermocouple outputs in programmable logic controller (PLC) input modules.

IC Role / Device Role / Timing Role: First-stage gain element in isolated, low-drift analog front-end.

Use Value: −55°C to +150°C operating range and 250 hFE tolerance ensure reliable performance across extended industrial temperature zones.

Use Scenario: Biasing and signal coupling in −48 V DC-powered telephone line interface cards (LICs).

IC Role / Device Role / Timing Role: PNP switch/amplifier for ring detection and off-hook signaling circuits.

Use Value: −50 V VCEO rating matches telecom power rail requirements without derating or series protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose amplifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
MMBT5087 SOT-23 surface-mount package; identical electrical specs except RθJA = 200°C/W vs. 357°C/W; same hFE, VCEO, NF. Requires rework of PCB layout for SMT assembly; better thermal performance per unit area but lower absolute power handling. Select MMBT5087 when board space is constrained and automated SMT placement is available.
2N5086 Lower guaranteed hFE (150 min at −1.0 mA); otherwise identical package, voltage ratings, and noise performance. Suitable for non-critical gain stages where ±30% hFE variation is acceptable; less predictable DC bias in high-gain chains. Select 2N5086 only when cost sensitivity outweighs need for tight hFE distribution in production calibration.

Compared with MMBT5087 and 2N5086, the 2N5087_J61Z offers the highest guaranteed hFE in the TO-92 form factor, enabling simpler bias networks and improved repeatability in analog signal chains where gain stability is critical.

Availability

2N5087_J61Z is available at Aetrix Electronics and suitable for audio preamplifier design, industrial sensor signal conditioning, and legacy telecom line interface applications requiring stable component supply, long-term obsolescence management, and traceable sourcing.

Supply support for 2N5087_J61Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global semiconductor manufacturer specializing in power management, analog, sensor, and discrete solutions for automotive, industrial, and consumer markets.

The 2N5087_J61Z belongs to Fairchild's legacy "FACT Quiet Series™" discrete transistor family, engineered specifically for low-noise, high-gain analog signal amplification in cost-sensitive, high-reliability applications.

FAQ

What is the maximum collector-emitter voltage rating for 2N5087_J61Z?

The 2N5087_J61Z has a maximum collector-emitter voltage (VCEO) rating of −50 V. This specification is verified under test condition IC = −1.0 mA, IB = 0 at TA = 25°C. Exceeding this voltage risks irreversible breakdown; design margins should maintain ≤80% of this rating in continuous operation. The 2N5087_J61Z shares this rating with the 2N5086 and MMBT5087 variants.

Does 2N5087_J61Z have a guaranteed minimum DC current gain (hFE)?

Yes, the 2N5087_J61Z guarantees a minimum hFE of 250 at IC = −1.0 mA and VCE = −5.0 V, per the official Fairchild/ON Semiconductor datasheet Rev. B1. This is higher than the 2N5086's 150 minimum, making the 2N5087_J61Z preferable for gain-critical analog stages where bias stability matters.

What is the noise figure of 2N5087_J61Z and under what conditions is it measured?

The 2N5087_J61Z achieves a noise figure (NF) of 2.0 dB when tested at IC = −20 µA, VCE = −5.0 V, RS = 10 kΩ, and bandwidth 10 Hz to 15.7 kHz. This value is confirmed in the "Electrical Characteristics" table and validated in Figure 8 of the datasheet. It reflects true low-noise capability for high-impedance sensor interfaces.

Which package type does 2N5087_J61Z use, and how are its pins arranged?

The 2N5087_J61Z uses the TO-92 (JEDEC TO-226AA) through-hole package with pin 1 = Emitter, pin 2 = Base, pin 3 = Collector - as shown in the "Package Dimensions" section and marked "2Q" on the device body. This arrangement is standardized across Fairchild's 2N5086/2N5087 family and compatible with legacy socket footprints.

Can 2N5087_J61Z be used as a direct replacement for 2N5086 in existing designs?

The 2N5087_J61Z is mechanically and electrically pin-compatible with the 2N5086 in the TO-92 package, sharing identical pinout, voltage ratings, and thermal characteristics. However, its higher guaranteed hFE (250 vs. 150) may shift DC bias points; verify quiescent operating points and AC gain in the 2N5087_J61Z implementation before full deployment.

2N5087_J61Z Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging:
Bulk
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 1mA, 10mA
Current - Collector Cutoff (Max):
50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
250 @ 100µA, 5V
Power - Max:
625 mW
Frequency - Transition:
40MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92-3

2N5087_J61Z FAQ

1.How can I place an order for 2N5087_J61Z through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5087_J61Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5087_J61Z reliable?

The price and inventory of 2N5087_J61Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5087_J61Z is usually 5 days.

3.What payment methods are accepted for 2N5087_J61Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5087_J61Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5087_J61Z?

2N5087_J61Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5087_J61Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5087_J61Z?

For technical support, including 2N5087_J61Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5087_J61Z requirements.

6.How does Aetrix verify that 2N5087_J61Z is sourced from the original manufacturer or authorized distributors?

All 2N5087_J61Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5087_J61Z meets industry standards.

7.What is the process for return or replacement of 2N5087_J61Z?

All 2N5087_J61Z units undergo pre-shipment inspection (PSI). If there is an issue with 2N5087_J61Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5087_J61Z part is unused and in its original packaging.

Return procedure for 2N5087_J61Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2N5087_J61Z Tags

  • 2N5087_J61Z
  • 2N5087_J61Z PDF
  • 2N5087_J61Z Datasheet
  • 2N5087_J61Z Specifications
  • 2N5087_J61Z Images
  • onsemi
  • onsemi 2N5087_J61Z
  • Buy 2N5087_J61Z
  • 2N5087_J61Z Price
  • 2N5087_J61Z Distributor
  • 2N5087_J61Z Supplier
  • 2N5087_J61Z Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER