onsemi 2N5087RLRA

Overview

2N5087RLRA from onsemi is a PNP silicon small-signal amplifier transistor in TO-92 package, rated for V_CEO = 50 V, I_C = 50 mA, and h_FE = 250–800 (at I_C = 1.0–10 mA), with f_T = 40 MHz and low noise figure (NF ≤ 2.0 dB at 1 kHz). It serves as a high-gain, low-noise active device in audio preamplifier stages, bias networks, and discrete op-amp input pairs.

For engineers reviewing the 2N5087RLRA datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, thermal behavior, TO-92 terminal mapping, real-world use cases, and two validated alternative transistors - all confirmed from onsemi's official 2N5087/D Rev. 3 datasheet and packaging documentation.

Technical Context

This PNP bipolar junction transistor operates in linear amplification mode with guaranteed DC current gain across three collector current levels (1.0 mA, 10 mA, 100 µA), and exhibits stable V_CE(sat) ≤ 0.3 V at I_C/I_B = 10. Its f_T of 40 MHz supports audio-frequency and low-speed switching applications up to ~10 MHz with predictable phase margin.

Thermal design is supported by R_JA = 200 °C/W (ambient) and R_JC = 83.3 °C/W (case), enabling reliable operation from −55°C to +150°C junction temperature. Cutoff currents are tightly specified: I_CBO ≤ 50 nA and I_EBO ≤ 50 nA, confirming low leakage for precision biasing.

Key Specifications

Pinout & Package

2N5087RLRA uses the standard TO-92 (Case 29, Style 1) through-hole plastic package with 3 leads. Lead spacing and mechanical dimensions conform to ANSI Y14.5M-1982; body diameter ≈ 4.5 mm, lead length ≥ 6.35 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal amplifier applications.

Compared with 2N5087RLRA, the 2N3906 offers greater bandwidth but sacrifices noise performance and voltage headroom, while the MPSA92 trades gain uniformity and noise for extreme voltage tolerance - making 2N5087RLRA optimal for precision low-noise linear amplification below 10 MHz.

Availability

2N5087RLRA is available at Aetrix Electronics and suitable for audio preamplifiers, discrete op-amp input stages, and precision current mirrors requiring stable component supply, consistent parametric binning, and RoHS-compliant through-hole assembly.

Supply support for 2N5087RLRA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N5087RLRA belongs to onsemi's legacy small-signal transistor product line, designed specifically for high-fidelity analog signal conditioning, low-noise amplification, and precision biasing in cost-sensitive, high-reliability linear circuits.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5087RLRA?

The 2N5087RLRA has a maximum collector-emitter voltage (V_CEO) rating of 50 Vdc, verified per the onsemi 2N5087/D Rev. 3 datasheet under test condition I_C = 1.0 mAdc and I_B = 0. Exceeding this voltage risks avalanche breakdown and permanent device damage. Designers should maintain ≥20% margin (i.e., ≤40 V operating) for reliability in variable-temperature environments.

Does the 2N5087RLRA have Pb-free construction?

Yes, the 2N5087RLRA is a Pb-free, RoHS-compliant device, as confirmed by onsemi's marking diagram and ordering information. The "RLRA" suffix denotes tape-and-reel packaging with lead-free termination, and the device meets JEDEC J-STD-609A Class 1 requirements. This makes the 2N5087RLRA suitable for environmentally regulated production without solder compatibility concerns.

What is the typical noise figure of the 2N5087RLRA and under what conditions is it measured?

The 2N5087RLRA has a noise figure (NF) of ≤2.0 dB, measured at I_C = 20 µA and 100 µA, V_CE = 5.0 Vdc, R_S = 1.0 kΩ and 3.0 kΩ, and f = 1.0 kHz, per the Electrical Characteristics table in the official datasheet. This low NF is achieved due to tight control of base resistance and emitter doping, making the 2N5087RLRA especially effective in microphone preamp and sensor interface applications.

How is the pinout arranged on the 2N5087RLRA in TO-92 package?

The 2N5087RLRA uses standard TO-92 (Case 29, Style 1) pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector - with leads viewed from the flat side of the package, left-to-right. This arrangement is explicitly shown in the "MARKING DIAGRAM" and "PACKAGE DIMENSIONS" sections of the onsemi 2N5087/D Rev. 3 datasheet and is identical across all 2N5087 variants including 2N5087RLRA.

What is the DC current gain (h_FE) range for the 2N5087RLRA and how does it vary with collector current?

The 2N5087RLRA exhibits h_FE = 250 (min) at I_C = 100 µA, 250 (min) at I_C = 1.0 mA, and 250 (min) at I_C = 10 mA - with upper limit up to 800 at I_C = 10 mA, per the "ON CHARACTERISTICS" table. This wide but bounded gain range allows predictable bias design across multiple operating points, and the 2N5087RLRA maintains usable h_FE down to microampere-level currents for ultra-low-power analog functions.