Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi 2N5087RLRAG

Part No.:
2N5087RLRAG
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-226-3, TO-92-3 Long Body, Formed Leads
Datasheet:
Aetrix2N5087RLRAG.pdf
Description:
TRANS PNP 50V 0.05A TO92
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,622

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2N5087RLRAG from onsemi is a PNP silicon small-signal amplifier transistor in TO-92 package, rated for VCEO = 50 V, IC = 50 mA, and hFE = 250–800 (at IC = 1.0–10 mA), optimized for low-noise audio preamplification and precision current mirror applications.

For engineers reviewing the 2N5087RLRAG datasheet, pinout, applications, or equivalent options, this device is selected for high-current-gain stability across temperature, low VCE(sat) ≤ 0.3 V at IC/IB = 10, and fT = 40 MHz - critical for analog front-end gain stages and bias control circuits.

Technical Context

The 2N5087RLRAG operates as a linear PNP bipolar junction transistor with fixed-emitter configuration, supporting DC-coupled amplification and active load switching. Its hFE variation is bounded between −55°C and +125°C, and its noise figure remains ≤2.0 dB at 1 kHz with RS = 3.0 kΩ.

Thermal design is enabled by RJA = 200°C/W (ambient) and RJC = 83.3°C/W (case), with safe operating area validated up to 100 mA at VCE = 10 V under 1 ms pulses. The device exhibits Ccb = 4.0 pF at VCB = 5 V, supporting stable high-frequency bias networks.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 50 Vdc - Maximum collector-emitter voltage before breakdown; enables use in ±24 V rail systems with margin.
IC (continuous) 50 mAdc - Continuous collector current rating; supports medium-gain active loads without derating at 25°C.
hFE 250–800 - DC current gain range at IC = 1.0–10 mA; ensures predictable bias point stability in emitter-follower configurations.
fT 40 MHz - Current-gain bandwidth product at IC = 500 µA; sufficient for audio band amplification and low-speed signal conditioning.
VCE(sat) ≤0.3 Vdc at IC = 10 mAdc, IB = 1.0 mAdc - Low saturation voltage reduces power loss in switch-mode bias networks.
NF ≤2.0 dB at 1 kHz, RS = 3.0 kΩ - Confirmed low-noise performance for microphone preamp and sensor interface stages.
RJA 200°C/W - Junction-to-ambient thermal resistance; defines maximum power dissipation (625 mW) in still-air PCB mounting.

Pinout & Package

2N5087RLRAG uses the standard TO-92 (Case 29-11) through-hole package with bent leads, Pb-free finish, and marking "2N5087" followed by date code. Pin 1 is Emitter, Pin 2 is Base, Pin 3 is Collector - verified per onsemi's official marking diagram and package outline.

Pin/Terminal Circuit Role Design Meaning
1 (Emitter) Current source terminal for PNP operation Connected to higher potential rail; sets reference for base-emitter forward bias and current sourcing capability.
2 (Base) Control input for minority-carrier injection Receives base drive current to modulate collector current; requires external bias network for stable Q-point.
3 (Collector) Output current sink terminal Delivers amplified current to load; polarity inverted relative to base drive - essential for common-emitter gain stages.

Key Features

Feature Design Value
High hFE consistency Min 250 at IC = 1.0 mAdc ensures reliable current mirroring with <±5% unit-to-unit spread in matched pairs.
Low noise figure ≤2.0 dB at 1 kHz enables use in electret microphone preamps where SNR > 60 dB is required.
Pb-free TO-92 packaging RoHS-compliant construction with tape-and-reel delivery (2000 units/reel); compatible with standard wave soldering profiles.
Wide TJ range −55°C to +150°C operation supports industrial temperature-grade designs without derating below −40°C ambient.
Controlled Ccb 4.0 pF max at VCB = 5 V limits Miller effect in high-gain CE stages, preserving phase margin up to 10 MHz.

Applications

Audio Preamp Stage Current Mirror Reference

Use Scenario: Low-level signal amplification from condenser microphones in portable voice recorders.

IC Role / Device Role / Timing Role: PNP small-signal amplifier in common-emitter configuration with emitter degeneration.

Use Value: hFE ≥250 and NF ≤2.0 dB deliver >65 dB SNR at 1 kHz with minimal component count.

Use Scenario: Precision bias current generation for op-amp input stage matching in instrumentation amplifiers.

IC Role / Device Role / Timing Role: Active current source in Wilson mirror topology with thermal tracking.

Use Value: Tight hFE tolerance and −55°C to +125°C hFE stability ensure <1% current mismatch over full industrial range.

Active Load Switch Low-Voltage Level Shifter

Use Scenario: High-side current-controlled load switching in 3.3 V logic-controlled analog subsystems.

IC Role / Device Role / Timing Role: Saturated PNP switch driving resistive loads up to 40 mA.

Use Value: VCE(sat) ≤0.3 V at IC/IB = 10 minimizes dropout and self-heating during continuous conduction.

Use Scenario: Bidirectional level translation between 5 V microcontroller GPIO and 12 V analog sensor outputs.

IC Role / Device Role / Timing Role: Inverting open-collector interface with pull-up to higher rail.

Use Value: VCEO = 50 V and IC = 50 mA support robust 12 V output sinking without external protection diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal amplifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC557B hFE = 200–450 (lower max gain), VCEO = 45 V, TO-92 but non-Pb-free option available Marginally lower voltage headroom and gain; suitable only where 45 V rating suffices and RoHS not mandated Select when cost sensitivity outweighs need for 50 V rating and extended hFE range.
MPSA92 VCEO = 300 V, IC = 500 mA, fT = 50 MHz, TO-92 but higher power dissipation (625 mW same, but RJA = 200°C/W unchanged) Over-specified for low-voltage audio; excessive VCEO increases capacitance and reduces fT efficiency at low bias Choose only if system requires >100 V isolation or high-voltage active load switching beyond 50 V.

Compared with BC557B and MPSA92, the 2N5087RLRAG delivers optimal balance of 50 V rating, 250–800 hFE, and 2.0 dB noise - making it the preferred choice for precision low-noise, medium-voltage analog gain blocks where both performance and RoHS compliance are mandatory.

Availability

2N5087RLRAG is available at Aetrix Electronics and suitable for audio preamplification, current mirror biasing, and low-voltage level shifting requiring stable component supply, consistent parametric yield, and full traceability.

Supply support for 2N5087RLRAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N5087RLRAG belongs to onsemi's legacy discrete transistor family designed specifically for high-fidelity analog signal conditioning, emphasizing low-noise operation, tight hFE distribution, and industrial temperature reliability.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5087RLRAG?

The 2N5087RLRAG has a guaranteed minimum VCEO rating of 50 Vdc, verified per onsemi's datasheet under IC = 1.0 mAdc and IB = 0 conditions. This allows safe operation in circuits with up to ±24 V rails while maintaining 2 V margin against breakdown. Exceeding this voltage risks irreversible junction failure.

Does the 2N5087RLRAG support low-noise audio applications?

Yes - the 2N5087RLRAG is characterized for noise figure ≤2.0 dB at 1 kHz with RS = 3.0 kΩ, and its typical noise voltage is below 5 nV/√Hz at 1 kHz. These values are confirmed in Figures 3–5 of the official datasheet, making it suitable for electret microphone preamplifiers and sensor signal conditioning where SNR > 60 dB is required.

What is the DC current gain range of the 2N5087RLRAG at different collector currents?

The 2N5087RLRAG provides hFE = 250 (min) at IC = 1.0 mAdc, hFE = 250 (min) at IC = 10 mAdc, and hFE = 250 (min) at IC = 100 µAdc - all tested at VCE = 5.0 Vdc and TA = 25°C. The maximum hFE reaches 800 at IC = 1.0 mAdc, enabling precise bias design across multiple operating points.

Is the 2N5087RLRAG RoHS compliant and what packaging format does it use?

Yes - the 2N5087RLRAG is explicitly marked "Pb-Free" in onsemi's ordering information and shipped in tape-and-reel format (2000 units per reel). Its TO-92 package (Case 29-11) meets RoHS Directive 2011/65/EU requirements, with lead finish qualified for standard reflow and wave soldering processes.

How does thermal resistance affect power handling for the 2N5087RLRAG in PCB designs?

The 2N5087RLRAG has RJA = 200°C/W (junction-to-ambient) and RJC = 83.3°C/W (junction-to-case). At 25°C ambient, its 625 mW maximum dissipation drops to ~375 mW at 70°C ambient - calculated via linear derating (5.0 mW/°C above 25°C). Proper copper pour and airflow are essential to maintain TJ ≤150°C in continuous operation.

2N5087RLRAG Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
50 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 1mA, 10mA
Current - Collector Cutoff (Max):
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
250 @ 100µA, 5V
Power - Max:
625 mW
Frequency - Transition:
40MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92 (TO-226)

2N5087RLRAG FAQ

1.How can I place an order for 2N5087RLRAG through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5087RLRAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5087RLRAG reliable?

The price and inventory of 2N5087RLRAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5087RLRAG is usually 5 days.

3.What payment methods are accepted for 2N5087RLRAG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5087RLRAG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5087RLRAG?

2N5087RLRAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5087RLRAG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5087RLRAG?

For technical support, including 2N5087RLRAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5087RLRAG requirements.

6.How does Aetrix verify that 2N5087RLRAG is sourced from the original manufacturer or authorized distributors?

All 2N5087RLRAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5087RLRAG meets industry standards.

7.What is the process for return or replacement of 2N5087RLRAG?

All 2N5087RLRAG units undergo pre-shipment inspection (PSI). If there is an issue with 2N5087RLRAG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5087RLRAG part is unused and in its original packaging.

Return procedure for 2N5087RLRAG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2N5087RLRAG Tags

  • 2N5087RLRAG
  • 2N5087RLRAG PDF
  • 2N5087RLRAG Datasheet
  • 2N5087RLRAG Specifications
  • 2N5087RLRAG Images
  • onsemi
  • onsemi 2N5087RLRAG
  • Buy 2N5087RLRAG
  • 2N5087RLRAG Price
  • 2N5087RLRAG Distributor
  • 2N5087RLRAG Supplier
  • 2N5087RLRAG Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER