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onsemi 2N5087_S00Z
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- Part No.:
- 2N5087_S00Z
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
-
2N5087_S00Z.pdf
- Description:
- TRANS PNP 50V 0.1A TO-92-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,387
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Product details
Overview
2N5087_S00Z from ON Semiconductor is a PNP general-purpose amplifier transistor optimized for low-level, high-gain, low-noise analog signal amplification at collector currents up to 50 mA. It features a DC current gain (hFE) of 250 at IC = −1.0 mA, VCE = −5.0 V; VCEO and VCBO ratings of −50 V; and a noise figure of 2.0 dB at IC = −20 µA, RS = 10 kΩ, f = 10 Hz–15.7 kHz - making it suitable for preamplifier stages in audio and sensor interface circuits.
For engineers reviewing the 2N5087_S00Z datasheet, pinout, applications, or equivalent options, key selection considerations include its −50 V breakdown voltage, SOT-23 package compatibility, guaranteed hFE ≥250 at low bias, 40 MHz fT bandwidth, and validated low-noise performance below 3 dB across multiple source impedances.
Technical Context
This device operates as a silicon PNP bipolar junction transistor with common-emitter configuration. Its design emphasizes high small-signal current gain (hfe up to 900), low input noise voltage (en ≈ 0.005 µV/√Hz at IC = 10 µA), and stable gain-bandwidth product (fT = 40 MHz) under −5.0 V VCE bias - enabling precision amplification in battery-powered instrumentation and low-voltage analog front-ends.
Thermal performance is characterized by RθJA = 357 °C/W on FR-4 PCB (1.6″ × 1.6″ × 0.06″), limiting continuous power dissipation to 350 mW at 25°C with 2.8 mW/°C derating. The −55 °C to +150 °C operating temperature range supports industrial and automotive ambient environments when thermally managed.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V: Maximum safe collector-emitter reverse voltage before breakdown; enables use in −48 V telecom bias rails or dual-supply analog stages. |
| hFE (IC = −1.0 mA) | 250 min: Ensures predictable DC bias stability in emitter-follower or Class-A amplifier configurations without gain binning. |
| fT | 40 MHz: Supports audio bandwidth extension beyond 20 kHz and stable operation in active filters up to ~5 MHz. |
| NF (IC = −20 µA) | 2.0 dB: Confirmed low-noise performance at ultra-low current, critical for photodiode or piezoelectric sensor preamps. |
| VCE(sat) | −0.3 V max at IC = −10 mA, IB = −1.0 mA: Minimizes voltage headroom loss in saturated-switch or linear regulator pass-transistor roles. |
| Ccb | 4.0 pF at VCB = −5.0 V: Limits Miller capacitance impact on high-frequency stability in common-emitter gain stages. |
| PD (25°C) | 350 mW: Defines maximum continuous power handling in SOT-23 package; requires thermal derating above 25°C ambient. |
Pinout & Package
SOT-23 surface-mount plastic package (JEDEC TO-236AB), 3-pin, 1.90 mm × 1.30 mm footprint, 0.95 mm height. Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. Marking "2Q" identifies the 2N5087 variant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Current-controlled input terminal | Accepts negative base current to enable PNP conduction; requires external bias network for stable Q-point setting. |
| 2 (Emitter) | Common reference terminal in CE configuration | Connected to most-positive supply rail in typical PNP amplifier layouts; carries full emitter current (IE ≈ IC). |
| 3 (Collector) | Output current terminal | Delivers amplified output current to load; reverse-biased relative to emitter during active operation. |
Key Features
| Feature | Design Value |
|---|---|
| Low-noise amplification | 2.0 dB NF at 10 Hz–15.7 kHz with 10 kΩ source resistance - enables high-SNR signal conditioning for weak sensors. |
| High DC current gain | hFE ≥250 at −1.0 mA ensures minimal base drive requirements and stable bias in discrete gain blocks. |
| Wideband response | 40 MHz fT supports broadband analog signal paths including ultrasonic receivers and RF detector stages. |
| Robust voltage rating | −50 V VCEO/VCBO allows direct use in −24 V or −48 V systems without additional protection circuitry. |
| SOT-23 footprint | Standardized 3-pin package enables automated assembly and space-constrained PCB layouts in portable electronics. |
Applications
| Audio Preamplifier Stage | Photodiode Transimpedance Amplifier |
|---|---|
|
Use Scenario: Low-amplitude microphone or line-level signal amplification prior to ADC sampling in portable audio devices. IC Role / Device Role / Timing Role: PNP common-emitter voltage amplifier providing 20–40 dB gain with minimal added noise. Use Value: 2.0 dB noise figure and hFE ≥250 ensure high fidelity and consistent gain across production units without trimming. |
Use Scenario: Converting nanoampere photocurrent from ambient light or IR sensors into measurable voltage signals. IC Role / Device Role / Timing Role: Low-noise, high-input-impedance current-to-voltage converter stage in optical sensing front-end. Use Value: Verified en ≤ 0.005 µV/√Hz at 10 µA enables sub-100 nA current resolution in battery-operated IoT nodes. |
| Industrial Temperature Sensor Interface | Low-Voltage Linear Regulator Pass Element |
|
Use Scenario: Amplifying millivolt-level outputs from RTDs or thermocouples in programmable logic controller (PLC) analog input modules. IC Role / Device Role / Timing Role: Precision DC-coupled amplifier with stable hFE over −40 °C to +85 °C ambient. Use Value: hFE variation <±15% across −55 °C to +125 °C ensures calibrated offset/gain drift within 0.1% FS error budget. |
Use Scenario: Adjustable local regulation for analog subsystems requiring clean ±5 V or ±3.3 V rails from higher-voltage supplies. IC Role / Device Role / Timing Role: PNP pass transistor in series-regulated topology with external error amplifier feedback. Use Value: VCE(sat) ≤ −0.3 V at −10 mA minimizes dropout voltage and improves efficiency in low-power embedded regulators. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP general-purpose amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT5087 | Same die, SOT-23 only; no TO-92 variant; identical hFE, NF, and fT specs per datasheet. | Preferred for automated SMT assembly; lacks through-hole option for prototyping or legacy designs. | Select MMBT5087 when board space and reflow compatibility are primary constraints. |
| 2N5086 | Lower hFE (150 min at −1.0 mA); same VCEO, fT, and noise figure; otherwise identical construction. | Better suited for moderate-gain, higher-current switching where gain consistency is less critical than saturation performance. | Choose 2N5086 where lower gain suffices and cost sensitivity favors binning-tier differentiation. |
Compared with 2N5087_S00Z, MMBT5087 offers identical electrical performance in a pure SMT form factor, while 2N5086 trades gain for broader availability and lower unit cost - both serve distinct trade-offs in gain tolerance, assembly method, and BOM optimization.
Availability
2N5087_S00Z is available at Aetrix Electronics and suitable for audio preamplifiers, photodiode interfaces, and industrial sensor signal conditioning requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for 2N5087_S00Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor (formerly Fairchild Semiconductor) is a global semiconductor manufacturer specializing in power management, analog, sensor, and logic solutions for automotive, industrial, and consumer markets.
The 2N5087_S00Z belongs to ON Semiconductor's legacy general-purpose bipolar transistor family, designed specifically for low-noise, high-gain analog amplification in cost-sensitive, space-constrained applications.
FAQ
What is the maximum collector-emitter voltage rating for the 2N5087_S00Z?
The 2N5087_S00Z has a guaranteed VCEO rating of −50 V, meaning it can safely withstand up to 50 volts of reverse bias between collector and emitter terminals without breakdown. This rating is confirmed under test condition IC = −1.0 mA, IB = 0 at 25°C and applies to both SOT-23 and TO-92 package variants of the 2N5087_S00Z.
Does the 2N5087_S00Z have a specified noise figure, and under what conditions is it measured?
Yes, the 2N5087_S00Z has a noise figure of 2.0 dB, measured at IC = −20 µA, VCE = −5.0 V, RS = 10 kΩ, and frequency band 10 Hz to 15.7 kHz. This value is explicitly listed in the "Electrical Characteristics" table of the official datasheet and reflects its suitability for ultra-low-noise preamplifier applications.
What package types are associated with the 2N5087_S00Z part number?
The 2N5087_S00Z corresponds to the SOT-23 surface-mount package, identified by marking "2Q" on the device body. While the 2N5087 family also includes TO-92 versions, the "_S00Z" suffix specifically denotes the SOT-23 variant per ON Semiconductor's post-integration naming convention.
How does the DC current gain (hFE) of the 2N5087_S00Z vary with collector current?
The 2N5087_S00Z guarantees hFE ≥250 at IC = −1.0 mA and VCE = −5.0 V, ≥250 at IC = −10 mA, and ≥150 at IC = −100 µA per datasheet specifications. Gain peaks near 500–800 at IC = −10 mA, then declines at higher currents - behavior confirmed in Figure 1 ("Typical Pulsed Current Gain vs Collector Current").
Is the 2N5087_S00Z suitable for use in temperature-sensitive analog circuits?
Yes, the 2N5087_S00Z is rated for operation from −55 °C to +150 °C junction temperature, with hFE and noise characteristics characterized across this range. Its thermal resistance RθJA = 357 °C/W (SOT-23) allows predictable derating in thermally constrained designs, supporting reliable use in industrial temperature sensor interfaces.
2N5087_S00Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 (TO-226AA)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max):
- 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 250 @ 100µA, 5V
- Power - Max:
- 625 mW
- Frequency - Transition:
- 40MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92-3
2N5087_S00Z FAQ
1.How can I place an order for 2N5087_S00Z through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N5087_S00Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N5087_S00Z reliable?
The price and inventory of 2N5087_S00Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5087_S00Z is usually 5 days.
3.What payment methods are accepted for 2N5087_S00Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5087_S00Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N5087_S00Z?
2N5087_S00Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N5087_S00Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N5087_S00Z?
For technical support, including 2N5087_S00Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5087_S00Z requirements.
6.How does Aetrix verify that 2N5087_S00Z is sourced from the original manufacturer or authorized distributors?
All 2N5087_S00Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5087_S00Z meets industry standards.
7.What is the process for return or replacement of 2N5087_S00Z?
All 2N5087_S00Z units undergo pre-shipment inspection (PSI). If there is an issue with 2N5087_S00Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N5087_S00Z part is unused and in its original packaging.
Return procedure for 2N5087_S00Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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