onsemi 2N5087TFR

Overview

2N5087TFR from ON Semiconductor is a PNP general-purpose amplifier transistor optimized for low-level, high-gain, low-noise signal amplification at collector currents up to 50 mA. It features V_CEO = −50 V, h_FE = 250 (at I_C = −1.0 mA), f_T = 40 MHz, V_CE(sat) = −0.3 V (at I_C = −10 mA), and C_cb = 4.0 pF - enabling precision analog front-ends in battery-powered instrumentation and audio preamplifiers.

For engineers reviewing the 2N5087TFR datasheet, pinout, applications, or equivalent options, key selection criteria include its −50 V breakdown rating, 250 minimum DC current gain at low bias, 40 MHz gain-bandwidth product, low 2.0 dB noise figure at 1 kHz with 10 kΩ source resistance, and SOT-23 surface-mount package compatibility with space-constrained PCB layouts.

Technical Context

The 2N5087TFR operates as a discrete PNP bipolar junction transistor with common-emitter configuration. Its design emphasizes low-noise amplification at sub-mA collector currents, supported by a typical noise figure of 2.0 dB (I_C = −20 µA, R_S = 10 kΩ, BW = 15.7 kHz) and high small-signal current gain (h_fe = 900 max at I_C = −1.0 mA).

Thermal performance is defined for SOT-23 mounting on FR-4 PCB (1.6″ × 1.6″ × 0.06″), delivering R_θJA = 357 °C/W and P_D = 350 mW at 25 °C, derating linearly at 2.8 mW/°C above ambient. Junction temperature is rated to +150 °C, with storage range from −55 °C to +150 °C.

Key Specifications

Pinout & Package

SOT-23 plastic surface-mount package (3-pin, JEDEC TO-236AB); compact footprint (2.90 mm × 1.30 mm × 1.02 mm) with gull-wing leads for automated assembly and thermal reliability on standard FR-4.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose amplifier applications.

Compared with MMBT5087 and 2N5086, the 2N5087TFR delivers guaranteed higher minimum current gain (250 vs. 150 or unmarked spec), making it preferred for low-bias, high-precision analog circuits where gain predictability directly impacts calibration accuracy and dynamic range.

Availability

2N5087TFR is available at Aetrix Electronics and suitable for audio preamplifiers, sensor signal conditioning, industrial current sink drivers, and low-power analog switch bias networks requiring stable component supply and long-term manufacturability.

Supply support for 2N5087TFR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global supplier of energy-efficient semiconductor solutions for automotive, industrial, cloud computing, medical, and IoT applications.

The 2N5087TFR belongs to ON Semiconductor's legacy general-purpose bipolar transistor family, designed specifically for low-noise, high-gain analog signal amplification in cost-sensitive, space-constrained consumer and industrial electronics.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5087TFR?

The 2N5087TFR has a maximum collector-emitter voltage (V_CEO) rating of −50 V. This rating applies under DC conditions at T_A = 25 °C and is based on a maximum junction temperature of 150 °C. Operation beyond this voltage risks irreversible breakdown and device failure, especially in high-impedance or inductive load scenarios where voltage spikes may occur.

Does the 2N5087TFR have a specified noise figure, and under what conditions is it measured?

Yes, the 2N5087TFR has a specified noise figure of 2.0 dB, measured at I_C = −20 µA, V_CE = −5.0 V, R_S = 10 kΩ, and frequency band 10 Hz to 15.7 kHz. This value reflects its suitability for ultra-low-noise amplification in sensor interface circuits where preserving signal integrity at microvolt levels is critical.

What package type is used for the 2N5087TFR, and what are its key mechanical dimensions?

The 2N5087TFR uses the SOT-23 surface-mount package (JEDEC TO-236AB). Key dimensions include 2.90 mm length, 1.30 mm width, and 1.02 mm height, with 0.95 mm lead pitch and gull-wing terminations. The package marking is "2Q", and it is rated for reflow soldering per J-STD-020.

How does the DC current gain (h_FE) of the 2N5087TFR vary with collector current?

The 2N5087TFR exhibits h_FE = 250 (min) at I_C = −1.0 mA, rising to 800 (max) under the same conditions. At I_C = −10 mA, h_FE remains ≥ 150. This gain profile supports stable operation across bias points from micropower sensor interfaces to moderate-drive analog stages without requiring gain-compensation circuitry.

Is the 2N5087TFR suitable for use in automotive applications?

The 2N5087TFR is not AEC-Q101 qualified and lacks automotive-grade qualification documentation. While its operating temperature range (−55 °C to +150 °C) meets under-hood thermal requirements, ON Semiconductor does not specify automotive stress testing, failure rate data, or PPAP support for this part. For automotive use, designers should select AEC-Q101-certified alternatives such as the NSS20201MR6T1G.