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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N5088_D11Z

Name: 2N5088_D11Z
Brand: onsemi
SKU: 2N5088_D11Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N5088_D11Z

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA)

Datasheet:: 2N5088_D11Z.pdf

Description:: TRANS NPN 30V 0.1A TO-92-3

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Product details

Overview

2N5088_D11Z from ON Semiconductor is an NPN general-purpose amplifier optimized for low-noise, high-gain signal amplification at collector currents from 1 µA to 50 mA. It features V_CEO = 30 V, h_FE ≥ 300 (at I_C = 100 µA), f_T = 50 MHz, NF = 3.0 dB (at I_C = 100 µA), and TO-92 package - used in preamplifier stages of audio and sensor interface circuits.

For engineers reviewing the 2N5088_D11Z datasheet, pinout, applications, or equivalent options, key selection criteria include verified low-noise performance at microamp bias, guaranteed minimum h_FE across temperature, junction-to-ambient thermal resistance (R_θJA = 200 °C/W), and compatibility with through-hole prototyping and legacy analog signal chains.

Technical Context

This device operates as a discrete NPN bipolar junction transistor with fixed-emitter configuration, supporting linear amplification in common-emitter topology. Its design emphasizes low base spreading resistance and optimized epitaxial base doping to achieve high current gain and sub-3 dB noise figure at ultra-low collector currents.

Thermal performance is defined by R_θJA = 200 °C/W on standard FR-4 PCB, enabling stable operation up to +125 °C ambient when derated per spec. The 2N5088_D11Z shares electrical characteristics and absolute maximum ratings with the original Fairchild 2N5088, including V_CEO = 30 V and P_D = 625 mW at T_A = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	30 V - Maximum safe collector-emitter voltage before breakdown under open-base conditions.
h_FE (min)	300 at I_C = 100 µA - Ensures usable gain in micropower amplifier stages without active bias compensation.
f_T	50 MHz - Supports wideband small-signal amplification up to audio and low-RF frequencies.
Noise Figure	3.0 dB at I_C = 100 µA, R_S = 10 kΩ - Enables high-SNR amplification in microphone preamps and precision sensor front-ends.
P_D	625 mW at 25 °C - Allows continuous operation in compact through-hole designs with passive heatsinking.
R_θJA	200 °C/W - Defines thermal rise per watt dissipated on standard 1.6" × 1.6" FR-4 board; critical for reliability in sealed enclosures.

Pinout & Package

2N5088_D11Z is housed in a TO-92 plastic package with lead-free finish and standard through-hole mounting. Pin assignment follows JEDEC TO-92 outline: Emitter (E), Base (B), Collector (C) - arranged left-to-right when flat side faces viewer and leads point downward.

Pin/Terminal	Circuit Role	Design Meaning
E (Emitter)	Current sink terminal	Reference node for bias network; connects to ground or emitter degeneration resistor in CE amplifier.
B (Base)	Control input	Receives base current to modulate collector current; requires stable DC bias (e.g., voltage divider) for linear operation.
C (Collector)	Output current source	Drives load or next stage; connected to supply rail via collector resistor or active load in amplifier configurations.

Key Features

Feature	Design Value
Low-noise amplification	3.0 dB NF at 100 µA enables high-fidelity signal recovery in battery-powered sensor nodes.
High DC current gain	h_FE ≥ 300 at 100 µA supports stable biasing without feedback resistors in low-power preamps.
Wide operating temperature	−55 °C to +150 °C junction range allows deployment in automotive engine compartments and industrial controls.
TO-92 mechanical compatibility	Standard footprint ensures drop-in replacement in legacy designs using 2N5088, MMBT5088, or PN2222A-based layouts.

Applications

Audio Preamplifier	Temperature Sensor Interface
Use Scenario: Amplifying weak output from electret condenser microphones in portable voice recorders. IC Role / Device Role / Timing Role: Discrete NPN transistor configured as common-emitter voltage amplifier with emitter degeneration. Use Value: 3.0 dB noise figure and 300+ h_FE at 100 µA enable clean gain without adding measurable self-noise to 10 mV RMS signals.	Use Scenario: Linear amplification of output from silicon bandgap temperature sensors (e.g., LM35 derivatives). IC Role / Device Role / Timing Role: Transconductance amplifier converting sensor's ratiometric voltage into buffered current for ADC input. Use Value: Stable h_FE over −40 °C to +125 °C ensures consistent gain calibration across environmental test chambers.
Low-Power Oscillator Core	Instrumentation Signal Conditioning
Use Scenario: Active device in Colpitts or phase-shift oscillator circuits requiring predictable gain at 1–10 MHz. IC Role / Device Role / Timing Role: Gain element sustaining oscillation via controlled positive feedback; biased at 500 µA for optimal f_T/phase margin trade-off. Use Value: 50 MHz f_T and low C_cb (4.0 pF) support stable oscillation up to 8 MHz without parasitic mode coupling.	Use Scenario: Front-end gain stage for strain gauge Wheatstone bridge outputs in handheld multimeters. IC Role / Device Role / Timing Role: Differential pair driver with matched h_FE and low V_BE(on) variation across unit batches. Use Value: V_BE(on) = 0.8 V ±0.05 V and <10 nA I_CBO minimize offset drift and input bias error in 24-bit delta-sigma measurement paths.

Audio Preamplifier

Temperature Sensor Interface

Use Scenario: Amplifying weak output from electret condenser microphones in portable voice recorders.

IC Role / Device Role / Timing Role: Discrete NPN transistor configured as common-emitter voltage amplifier with emitter degeneration.

Use Value: 3.0 dB noise figure and 300+ h_FE at 100 µA enable clean gain without adding measurable self-noise to 10 mV RMS signals.

Use Scenario: Linear amplification of output from silicon bandgap temperature sensors (e.g., LM35 derivatives).

IC Role / Device Role / Timing Role: Transconductance amplifier converting sensor's ratiometric voltage into buffered current for ADC input.

Use Value: Stable h_FE over −40 °C to +125 °C ensures consistent gain calibration across environmental test chambers.

Low-Power Oscillator Core

Instrumentation Signal Conditioning

Use Scenario: Active device in Colpitts or phase-shift oscillator circuits requiring predictable gain at 1–10 MHz.

IC Role / Device Role / Timing Role: Gain element sustaining oscillation via controlled positive feedback; biased at 500 µA for optimal f_T/phase margin trade-off.

Use Value: 50 MHz f_T and low C_cb (4.0 pF) support stable oscillation up to 8 MHz without parasitic mode coupling.

Use Scenario: Front-end gain stage for strain gauge Wheatstone bridge outputs in handheld multimeters.

IC Role / Device Role / Timing Role: Differential pair driver with matched h_FE and low V_BE(on) variation across unit batches.

Use Value: V_BE(on) = 0.8 V ±0.05 V and <10 nA I_CBO minimize offset drift and input bias error in 24-bit delta-sigma measurement paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT5088	SOT-23 surface-mount variant; identical electrical specs but lower P_D (350 mW) and higher R_θJA (357 °C/W).	Used where PCB space is constrained and reflow assembly is required; not suitable for >150 mW continuous dissipation.	Select MMBT5088 only when automated SMT placement and smaller footprint outweigh thermal derating needs.
2N5089	Lower V_CEO (25 V) and V_CBO (30 V); otherwise identical h_FE, f_T, and noise performance.	Restricted to ≤25 V supply rails; acceptable where system voltage margin permits reduced breakdown safety margin.	Choose 2N5089 only if supply voltage remains ≤22 V and long-term reliability testing confirms no field overstress risk.

Compared with 2N5088_D11Z, MMBT5088 trades thermal robustness for miniaturization, while 2N5089 reduces voltage headroom without improving gain or noise - making 2N5088_D11Z the preferred choice for general-purpose through-hole amplifiers demanding full 30 V rating and 625 mW capability.

Availability

2N5088_D11Z is available at Aetrix Electronics and suitable for audio preamplifiers, sensor signal conditioning, low-power oscillators, and instrumentation front-ends requiring stable component supply and long-lifecycle support.

Supply support for 2N5088_D11Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The 2N5088_D11Z belongs to ON Semiconductor's legacy general-purpose bipolar transistor product line, designed for reliable, low-cost linear amplification in cost-sensitive analog systems where proven performance and long-term availability are prioritized over advanced packaging or integrated features.

FAQ

What is the maximum collector-emitter voltage rating for 2N5088_D11Z?

The 2N5088_D11Z has a maximum collector-emitter voltage (V_CEO) rating of 30 V at T_A = 25 °C. This rating applies under open-base conditions and decreases with rising junction temperature. Operation above 30 V risks avalanche breakdown and permanent device degradation. Designers must ensure worst-case transient voltages - including inductive kickback - remain within this limit, especially in switching or relay-driver applications where 2N5088_D11Z may be used outside its primary linear role.

Does 2N5088_D11Z have a specified noise figure, and under what conditions?

Yes, the 2N5088_D11Z has a typical noise figure (NF) of 3.0 dB, measured at I_C = 100 µA, V_CE = 5.0 V, R_S = 10 kΩ, and frequency bandwidth 10 Hz to 15.7 kHz. This value reflects its suitability for low-level signal amplification where SNR preservation is critical. The noise figure rises at higher collector currents and varies with source impedance - data sheet curves show NF = 2.0 dB for 2N5089 under identical conditions, confirming 2N5088_D11Z's position as the lower-noise option in the family.

What package type is used for 2N5088_D11Z, and how is it pin-ordered?

The 2N5088_D11Z uses a TO-92 plastic package with three leads. When viewing the flat side of the package with leads pointing downward, the pin order from left to right is Emitter (E), Base (B), Collector (C). This matches JEDEC standard TO-92 orientation and ensures mechanical and electrical compatibility with sockets and PCB footprints designed for legacy 2N5088 variants. No silkscreen or marking indicates pin 1; orientation must be confirmed visually per package outline drawing.

How does the DC current gain (h_FE) of 2N5088_D11Z vary with collector current?

The 2N5088_D11Z exhibits h_FE ≥ 300 at I_C = 100 µA, ≥ 350 at I_C = 1.0 mA, and ≥ 300 at I_C = 10 mA (all at V_CE = 5.0 V). This non-monotonic behavior - peaking near 1 mA - is characteristic of optimized low-noise transistors and supports stable biasing across multiple operating points. Designers should consult the "Typical Pulsed Current Gain vs Collector Current" curve in the datasheet to select optimal I_C for target gain-bandwidth trade-offs in their 2N5088_D11Z circuit.

Is 2N5088_D11Z suitable for use in automotive under-hood applications?

Yes, the 2N5088_D11Z supports junction temperatures from −55 °C to +150 °C and is qualified for industrial-grade operation. Its thermal resistance (R_θJA = 200 °C/W) and stable h_FE over temperature make it viable in engine control modules or cabin climate sensors - provided ambient PCB temperature stays ≤125 °C and power dissipation remains within derated limits. However, 2N5088_D11Z is not AEC-Q101 qualified; for production automotive ECUs, ON Semiconductor recommends AEC-qualified alternatives unless full qualification is waived per customer program requirements.

2N5088_D11Z Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 1mA, 10mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 300 @ 100µA, 5V

Power - Max:: 625 mW

Frequency - Transition:: 50MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

2N5088_D11Z FAQ

1.How can I place an order for 2N5088_D11Z through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5088_D11Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5088_D11Z reliable?

The price and inventory of 2N5088_D11Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5088_D11Z is usually 5 days.

3.What payment methods are accepted for 2N5088_D11Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5088_D11Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5088_D11Z?

2N5088_D11Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5088_D11Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5088_D11Z?

For technical support, including 2N5088_D11Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5088_D11Z requirements.

6.How does Aetrix verify that 2N5088_D11Z is sourced from the original manufacturer or authorized distributors?

All 2N5088_D11Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5088_D11Z meets industry standards.

7.What is the process for return or replacement of 2N5088_D11Z?

All 2N5088_D11Z units undergo pre-shipment inspection (PSI). If there is an issue with 2N5088_D11Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5088_D11Z part is unused and in its original packaging.

Return procedure for 2N5088_D11Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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