onsemi 2N5088_D81Z

Overview

2N5088_D81Z from ON Semiconductor is an NPN general-purpose amplifier transistor optimized for low-noise, high-gain signal amplification at collector currents from 1 µA to 50 mA. It features V_CEO = 30 V, V_CBO = 35 V, h_FE ≥ 300 (at I_C = 100 µA), f_T = 50 MHz, and NF = 3.0 dB (at I_C = 100 µA, R_S = 10 kΩ), commonly used in preamplifier stages of audio and instrumentation circuits.

For engineers reviewing the 2N5088_D81Z datasheet, pinout, applications, or equivalent options, key selection considerations include its low-noise performance at microamp bias, high DC current gain stability across temperature, TO-92 package thermal resistance (R_θJA = 200 °C/W), and suitability for discrete low-level analog front-end design where precision gain and noise control are critical.

Technical Context

The 2N5088_D81Z is a silicon NPN bipolar junction transistor with epitaxial base construction, designed for linear amplification rather than switching. Its SPICE model includes Bf = 1.122K, Vaf = 62.37 V, and Cjc = 4.017 pF - confirming high Early voltage and low junction capacitance for improved linearity and bandwidth.

It operates across –55 °C to +150 °C junction temperature range and supports stable small-signal gain (h_fe = 350–1400) from 1 kHz to 20 MHz. The device's low I_CBO ≤ 50 nA at V_CB = 20 V ensures minimal leakage in high-impedance bias networks typical of microphone preamps and sensor interfaces.

Key Specifications

Pinout & Package

2N5088_D81Z is housed in a through-hole TO-92 package (JEDEC TO-92 variant), with standard lead configuration: Emitter (E), Base (B), Collector (C) - left-to-right when viewing flat side with leads down.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Compared with 2N5088_D81Z, the 2N5089 trades 5 V headroom for lower noise, while the MMBT5088 retains identical gain/noise specs but shifts thermal management burden to PCB layout - making the 2N5088_D81Z optimal for through-hole prototyping and medium-power analog stages requiring robust voltage margin.

Availability

2N5088_D81Z is available at Aetrix Electronics and suitable for audio preamplifiers, instrumentation signal chains, and low-power sensor interfaces requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for 2N5088_D81Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensor, and logic devices for automotive, industrial, and consumer applications.

The 2N5088_D81Z belongs to ON Semiconductor's legacy general-purpose bipolar transistor family, originally developed by Fairchild for high-fidelity linear amplification - emphasizing low noise, high gain consistency, and rugged thermal performance in discrete analog circuits.

FAQ

What is the maximum collector-emitter voltage rating for 2N5088_D81Z?

The 2N5088_D81Z has a maximum collector-emitter voltage (V_CEO) rating of 30 V at T_A = 25 °C. This rating applies under steady-state DC conditions; pulsed operation requires consultation with ON Semiconductor's thermal guidelines. Exceeding this voltage risks avalanche breakdown and permanent device failure. Always verify margin against system rail voltages and transient spikes in final 2N5088_D81Z implementations.

Does 2N5088_D81Z support operation at elevated temperatures?

Yes, the 2N5088_D81Z is rated for junction temperatures from –55 °C to +150 °C. Its thermal resistance (R_θJA = 200 °C/W on FR-4) allows reliable operation up to +125 °C ambient when power dissipation remains within derated limits. For sustained high-temperature use, confirm PCB copper area and airflow per ON Semiconductor's AN-1115 thermal design notes. All 2N5088_D81Z performance parameters assume proper thermal management.

How does the noise figure of 2N5088_D81Z compare to other general-purpose transistors?

The 2N5088_D81Z delivers a noise figure of 3.0 dB at I_C = 100 µA, R_S = 10 kΩ, and 10 Hz–15.7 kHz bandwidth - among the lowest in its class. This outperforms standard 2N3904 (NF ≈ 5 dB) and matches premium low-noise types like BC549C. The 2N5088_D81Z achieves this via optimized base doping and geometry, making it preferred for first-stage amplification where noise dominates system SNR. Verify actual 2N5088_D81Z noise in your specific bias and layout.

Is 2N5088_D81Z pin-compatible with 2N5089 or MMBT5088?

No - 2N5088_D81Z is not pin-compatible with 2N5089 or MMBT5088. While all share identical TO-92 pinout (E-B-C), the 2N5089 has different absolute maximum ratings (V_CEO = 25 V), and MMBT5088 uses SOT-23 packaging with reversed pin order (Emitter-Collector-Base). Substituting without verifying voltage margins, thermal limits, and PCB footprint will risk circuit malfunction. Always validate each parameter individually for 2N5088_D81Z replacement scenarios.

What is the typical current gain (h_FE) of 2N5088_D81Z at low collector current?

The 2N5088_D81Z exhibits h_FE ≥ 300 at I_C = 100 µA and V_CE = 5.0 V, with typical values reaching 500–700. This high gain at microamp bias enables stable operation in ultra-low-power amplifiers and high-impedance sensor interfaces. Gain decreases slightly at higher currents (e.g., h_FE ≥ 300 at I_C = 10 mA), ensuring predictable behavior across wide dynamic range. Designers should reference the 2N5088_D81Z h_FE vs. I_C curve in Figure 12 of the datasheet for precise biasing.