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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N5088G

Name: 2N5088G
Brand: onsemi
SKU: 2N5088G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N5088G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body

Datasheet:: 2N5088G.pdf

Description:: TRANS NPN 30V 0.05A TO92

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2N5088G from onsemi is an NPN silicon small-signal amplifier transistor optimized for low-noise, high-current-gain applications in audio preamplifiers, RF amplifiers, and sensor signal conditioning circuits; features V_CEO = 30 V, I_C = 50 mA, h_FE = 300–900 (at I_C = 10 mA), f_T = 50 MHz, and NF = 3.0 dB at 1 kHz.

For engineers reviewing the 2N5088G datasheet, pinout, applications, or equivalent options, this page delivers verified electrical specifications, TO-92 package layout, noise performance context, and real-world design guidance for analog gain stages requiring stable h_FE and minimal broadband noise.

Technical Context

The 2N5088G employs a planar epitaxial NPN structure with tightly controlled base width to achieve high DC current gain across collector currents from 0.1 mA to 10 mA. Its low C_cb (4.0 pF) and C_eb (10 pF) support stable operation up to 50 MHz while maintaining low input capacitance for high-impedance source interfacing.

Designed for linear amplification, it exhibits low V_CE(sat) (≤0.5 V at I_C/I_B = 10) and low V_BE(on) (≤0.8 V at I_C = 10 mA), enabling efficient biasing in single-supply configurations. Its noise voltage (en ≈ 3–7 nV/√Hz) and noise figure (NF = 3.0 dB) are characterized at 1 kHz with R_S = 1 kΩ, making it suitable for microphone and piezoelectric sensor front-ends.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	30 V - Maximum collector-emitter voltage before breakdown; supports rail-to-rail operation in ±15 V or 24 V analog systems.
I_C (max)	50 mA - Continuous collector current rating; enables medium-gain stages driving 1–10 kΩ loads without thermal derating at 25°C ambient.
h_FE	300–900 - DC current gain range at I_C = 10 mA, V_CE = 5 V; ensures predictable bias stability in emitter-degenerated CE amplifiers.
f_T	50 MHz - Unity-gain bandwidth; allows stable small-signal amplification up to ~5–10 MHz with proper compensation.
NF	3.0 dB @ 1 kHz, R_S = 1 kΩ - Low-noise figure confirms suitability for first-stage amplification of weak signals (<100 µV) without significant SNR degradation.
P_D @ T_A	625 mW - Total power dissipation at 25°C ambient; requires ≤200°C/W thermal resistance PCB layout for full-rated operation.

Pinout & Package

2N5088G is housed in a Pb-free TO-92 (Case 29-10) plastic package with straight or bent leads; dimensions conform to ANSI Y14.5M, with lead pitch 0.100″ (2.54 mm) and body height ≤0.205″ (5.21 mm).

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal	Connected to ground or emitter resistor; sets DC bias point and provides low-impedance return path for amplified signal current.
2 (Base)	Control input terminal	Receives input signal or bias current; high h_FE minimizes required drive current, reducing loading on preceding stage.
3 (Collector)	Current source terminal	Delivers amplified output current; connected to load resistor or next stage; V_CEO rating defines maximum swing headroom.

Key Features

Feature	Design Value
Low noise figure	NF = 3.0 dB at 1 kHz enables use as first-stage preamp for microphones and piezo sensors without degrading SNR.
High DC current gain	h_FE ≥ 300 at I_C = 10 mA ensures stable bias in emitter-follower and common-emitter topologies with minimal base current error.
High f_T	50 MHz bandwidth supports wideband audio (20 Hz–20 kHz) and low-MHz RF amplification with flat gain response.
Low saturation voltage	V_CE(sat) ≤ 0.5 V at I_C/I_B = 10 reduces power loss and improves efficiency in switching or Class-A amplifier modes.
Pb-free TO-92 package	RoHS-compliant packaging meets industrial and consumer regulatory requirements without compromising thermal or mechanical reliability.

Applications

Audio Preamplifier Stage	RF Signal Amplifier
Use Scenario: Boosting low-level microphone or guitar pickup signals prior to ADC or tone control circuitry. IC Role / Device Role / Timing Role: NPN small-signal amplifier in common-emitter configuration with emitter degeneration for linearity. Use Value: High h_FE and low NF preserve signal integrity while delivering >20 dB voltage gain with <0.5% THD at 1 kHz.	Use Scenario: Intermediate-frequency (IF) amplification in AM/FM receivers or local oscillator buffer stages. IC Role / Device Role / Timing Role: Linear RF amplifier operating below f_T/10 to maintain gain flatness and minimize distortion. Use Value: 50 MHz f_T and low C_cb enable stable 1–10 MHz gain with <1 dB ripple and minimal phase shift.
Sensor Signal Conditioning	Low-Power Analog Front-End
Use Scenario: Amplifying outputs from thermistors, photodiodes, or strain gauges in battery-powered instrumentation. IC Role / Device Role / Timing Role: Transimpedance or voltage amplifier with low input bias current and minimal self-heating. Use Value: I_CBO ≤ 50 nA and low V_BE drift ensure stable DC offset over temperature in precision measurement paths.	Use Scenario: Building compact, discrete gain blocks in space-constrained IoT sensor nodes or portable medical devices. IC Role / Device Role / Timing Role: Discrete active component replacing integrated op-amps where ultra-low supply current or rail flexibility is critical. Use Value: 50 mA I_C max and 625 mW P_D allow operation from 3.3 V to 24 V rails with <1 mA quiescent current in optimized bias designs.

Audio Preamplifier Stage

RF Signal Amplifier

Use Scenario: Boosting low-level microphone or guitar pickup signals prior to ADC or tone control circuitry.

IC Role / Device Role / Timing Role: NPN small-signal amplifier in common-emitter configuration with emitter degeneration for linearity.

Use Value: High h_FE and low NF preserve signal integrity while delivering >20 dB voltage gain with <0.5% THD at 1 kHz.

Use Scenario: Intermediate-frequency (IF) amplification in AM/FM receivers or local oscillator buffer stages.

IC Role / Device Role / Timing Role: Linear RF amplifier operating below f_T/10 to maintain gain flatness and minimize distortion.

Use Value: 50 MHz f_T and low C_cb enable stable 1–10 MHz gain with <1 dB ripple and minimal phase shift.

Sensor Signal Conditioning

Low-Power Analog Front-End

Use Scenario: Amplifying outputs from thermistors, photodiodes, or strain gauges in battery-powered instrumentation.

IC Role / Device Role / Timing Role: Transimpedance or voltage amplifier with low input bias current and minimal self-heating.

Use Value: I_CBO ≤ 50 nA and low V_BE drift ensure stable DC offset over temperature in precision measurement paths.

Use Scenario: Building compact, discrete gain blocks in space-constrained IoT sensor nodes or portable medical devices.

IC Role / Device Role / Timing Role: Discrete active component replacing integrated op-amps where ultra-low supply current or rail flexibility is critical.

Use Value: 50 mA I_C max and 625 mW P_D allow operation from 3.3 V to 24 V rails with <1 mA quiescent current in optimized bias designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2N5089G	V_CEO = 25 V (vs. 30 V), h_FE min = 400 at I_C = 1 mA; otherwise identical TO-92 package and noise specs.	Better suited for lower-voltage (<20 V) designs where higher minimum h_FE at low current improves bias stability.	Select 2N5089G when operating below 20 V supply and prioritizing guaranteed h_FE at microampere bias levels.
BC548C	V_CEO = 30 V, but h_FE = 420–800 (lower max), NF = 4.0 dB, f_T = 300 MHz - higher bandwidth but noisier and less consistent gain.	Preferred in high-frequency switching or digital logic interface roles, not low-noise analog amplification.	Choose BC548C only for non-critical gain or switching; avoid in audio/sensor front-ends where 2N5088G's 3.0 dB NF and tighter h_FE distribution matter.

Compared with 2N5089G, the 2N5088G offers higher voltage tolerance and broader h_FE range at mid-currents; compared with BC548C, it delivers superior noise performance and more predictable DC gain-critical for precision analog signal chains.

Availability

2N5088G is available at Aetrix Electronics and suitable for audio preamplifiers, RF intermediate-frequency amplifiers, and sensor signal conditioning circuits requiring stable component supply, RoHS compliance, and verified low-noise transistor performance.

Supply support for 2N5088G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The 2N5088G belongs to onsemi's legacy NPN amplifier transistor family designed specifically for high-fidelity, low-noise analog signal amplification in cost-sensitive, high-reliability applications.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5088G?

The 2N5088G has a maximum collector-emitter voltage (V_CEO) rating of 30 Vdc. This specification is measured under test conditions of I_C = 1.0 mAdc and I_B = 0. Exceeding this voltage risks avalanche breakdown and permanent device damage. Designers should maintain at least 20% margin (≤24 V) in continuous operation to ensure long-term reliability across temperature extremes.

Does the 2N5088G have a specified noise figure, and under what conditions is it measured?

Yes, the 2N5088G has a specified noise figure (NF) of 3.0 dB, measured at I_C = 100 µAdc, V_CE = 5.0 Vdc, R_S = 1.0 kΩ, and f = 1.0 kHz. This value reflects its performance as a low-noise preamplifier stage; actual NF may vary slightly depending on bias point and source impedance, so validation in the target circuit is recommended.

What package type and lead configuration does the 2N5088G use?

The 2N5088G uses a Pb-free TO-92 (Case 29-10) plastic package with standardized pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector. It is supplied in bulk (5000 units) and tape-and-reel (2000 units) formats, with both straight-lead and bent-lead variants available per onsemi's ordering information.

How does the DC current gain (h_FE) of the 2N5088G vary with collector current?

The 2N5088G exhibits a typical h_FE range of 300–900, depending on I_C: minimum 300 at I_C = 10 mAdc, 350 at I_C = 1.0 mAdc, and up to 900 at I_C = 10 mAdc (per datasheet Figure 8). Gain peaks near 1–3 mA and declines at higher currents due to base-width modulation; designers should select bias points within 0.1–10 mA for optimal linearity and stability.

Is the 2N5088G suitable for RF amplifier applications, and what is its frequency limit?

Yes, the 2N5088G is suitable for RF amplifier applications up to approximately 10 MHz, supported by its 50 MHz current-gain bandwidth product (f_T). Its low C_cb (4.0 pF) and C_eb (10 pF) minimize Miller effect, enabling stable gain in tuned or broadband configurations. For frequencies above 15 MHz, consider higher-f_T alternatives like the MMBT5088.

2N5088G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 50 mA

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 1mA, 10mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 300 @ 100µA, 5V

Power - Max:: 625 mW

Frequency - Transition:: 50MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92 (TO-226)

2N5088G FAQ

1.How can I place an order for 2N5088G through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5088G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5088G reliable?

The price and inventory of 2N5088G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5088G is usually 5 days.

3.What payment methods are accepted for 2N5088G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5088G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5088G?

2N5088G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5088G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5088G?

For technical support, including 2N5088G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5088G requirements.

6.How does Aetrix verify that 2N5088G is sourced from the original manufacturer or authorized distributors?

All 2N5088G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5088G meets industry standards.

7.What is the process for return or replacement of 2N5088G?

All 2N5088G units undergo pre-shipment inspection (PSI). If there is an issue with 2N5088G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5088G part is unused and in its original packaging.

Return procedure for 2N5088G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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