onsemi 2N5088_J61Z

Overview

2N5088_J61Z from ON Semiconductor is an NPN general-purpose amplifier optimized for low-noise, high-gain signal amplification at collector currents from 1 µA to 50 mA. It features V_CEO = 30 V, h_FE ≥ 300 (at I_C = 100 µA), f_T = 50 MHz, NF = 3.0 dB (at I_C = 100 µA), and TO-92 package - used in preamplifier stages of audio and sensor interfaces.

For engineers reviewing the 2N5088_J61Z datasheet, pinout, applications, or equivalent options, key selection criteria include noise figure at low collector current, DC current gain consistency across temperature, saturation voltage under β = 10 drive, thermal resistance (R_θJA = 200 °C/W), and compatibility with through-hole prototyping and legacy analog signal chains.

Technical Context

This device operates as a discrete NPN bipolar junction transistor with fixed-emitter biasing capability in common-emitter configuration. Its design emphasizes low-noise performance at microamp-level collector currents and stable h_FE over -55°C to +150°C junction temperature range.

It supports linear amplification up to 50 MHz bandwidth with verified small-signal gain (h_fe ≥ 350 at I_C = 1.0 mA) and exhibits tight V_BE(on) = 0.8 V tolerance at I_C = 10 mA, enabling predictable base drive requirements in Class-A and Class-AB stages.

Key Specifications

Pinout & Package

2N5088_J61Z is housed in a TO-92 plastic package with lead-forming compliant to JEDEC TO-92 outline. The case is non-isolated, thermally coupled to the collector lead.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN amplifier applications.

Compared with 2N5088_J61Z, MMBT5088 trades package compatibility for miniaturization and thermal limitations, while 2N5089 reduces voltage rating without altering noise or gain behavior - both require explicit validation against the original design's voltage, thermal, and layout constraints.

Availability

2N5088_J61Z is available at Aetrix Electronics and suitable for audio preamplifier stages, photodiode transimpedance amplifiers, thermocouple signal conditioning requiring stable component supply and long-term obsolescence mitigation.

Supply support for 2N5088_J61Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, and sensing solutions for automotive, industrial, and cloud infrastructure markets.

The 2N5088_J61Z belongs to ON Semiconductor's legacy general-purpose bipolar transistor product line, designed specifically for high-fidelity, low-noise analog signal amplification in cost-sensitive and reliability-critical applications.

FAQ

What is the maximum collector-emitter voltage rating for 2N5088_J61Z?

The 2N5088_J61Z has a maximum collector-emitter voltage (V_CEO) rating of 30 V at T_A = 25°C. This rating applies under steady-state DC conditions and must be derated linearly above 25°C ambient per the device's thermal characteristics. Exceeding this limit risks avalanche breakdown and permanent damage to the 2N5088_J61Z junction.

Does 2N5088_J61Z support low-noise operation at microamp collector currents?

Yes, the 2N5088_J61Z is characterized for low-noise performance down to I_C = 100 µA, with a specified noise figure (NF) of 3.0 dB at that current, R_S = 10 kΩ, and 10 Hz–15.7 kHz bandwidth. This makes the 2N5088_J61Z suitable for high-impedance sensor interfaces where signal integrity at low current levels is essential.

What package type is used for 2N5088_J61Z and is it lead-free?

The 2N5088_J61Z uses the TO-92 plastic package with standard C-B-E pinout and is RoHS-compliant and lead-free per ON Semiconductor's environmental policy. The lead finish is matte tin, and the device meets J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30°C/85% RH.

How does the DC current gain (h_FE) of 2N5088_J61Z vary with collector current?

The 2N5088_J61Z exhibits h_FE ≥ 300 at I_C = 100 µA, ≥ 350 at I_C = 1.0 mA, and ≥ 300 at I_C = 10 mA (V_CE = 5.0 V). Gain peaks near 10 mA and declines at higher currents due to Kirk effect and series resistance - this behavior is documented in the 2N5088_J61Z typical pulsed h_FE vs. I_C curve.

Can 2N5088_J61Z be used in switching applications?

While primarily optimized for linear amplification, the 2N5088_J61Z can operate in switching mode with V_CE(sat) = 0.5 V at I_C = 10 mA / I_B = 1.0 mA and turn-on/off times in the hundreds of nanoseconds. However, its f_T = 50 MHz and lack of specified switching parameters mean the 2N5088_J61Z should not be selected for high-speed digital switching without empirical validation.