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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N5088TA

Name: 2N5088TA
Brand: onsemi
SKU: 2N5088TA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N5088TA

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Datasheet:: 2N5088TA.pdf

Description:: TRANS NPN 30V 0.1A TO-92-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2N5088TA from ON Semiconductor is an NPN general-purpose amplifier optimized for low-noise, high-gain signal amplification at collector currents from 1 µA to 50 mA. It features a V_CEO of 30 V, V_CBO of 35 V, h_FE up to 1200 at I_C = 10 mA, f_T of 50 MHz, and NF as low as 2.0 dB - making it suitable for preamplifier stages in audio and instrumentation circuits.

For engineers reviewing the 2N5088TA datasheet, pinout, applications, or equivalent options, key selection criteria include its low-noise performance at microamp bias levels, TO-92 package thermal resistance (R_θJA = 200 °C/W), and validated h_FE stability across −40°C to +125°C junction temperature range.

Technical Context

The 2N5088TA operates as a discrete NPN bipolar junction transistor with fixed-emitter configuration and common-emitter small-signal gain characteristics. Its h_FE spans 300–1200 depending on I_C, and noise figure is specified at 2.0 dB (I_C = 100 µA, R_S = 10 kΩ, BW = 15.7 kHz), confirming suitability for low-level analog front-end design.

It supports continuous collector current up to 100 mA with V_CE(sat) ≤ 0.5 V at I_C = 10 mA / I_B = 1 mA, and exhibits C_cb = 4.0 pF and C_eb = 10 pF at specified bias conditions - enabling predictable high-frequency behavior in tuned amplifier and oscillator bias networks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	30 V - Maximum safe collector-emitter voltage before breakdown under open-base condition; defines headroom for low-voltage amplifier rails.
h_FE (I_C = 10 mA)	300–1200 - Wide DC current gain range enables flexible biasing without external emitter degeneration in linear amplifiers.
f_T	50 MHz - Unity-gain bandwidth confirms usable RF performance up to ~10–20 MHz with proper layout and decoupling.
Noise Figure	2.0 dB (I_C = 100 µA) - Confirmed low-noise operation at ultra-low bias, critical for sensor interface and mic preamp stages.
P_D (T_A = 25°C)	625 mW - Total dissipation limit with 5.0 mW/°C derating above 25°C; supports moderate-power analog gain blocks in ambient-ventilated enclosures.
C_cb	4.0 pF - Low collector-base capacitance minimizes Miller effect, preserving bandwidth in common-emitter configurations.
R_θJA	200 °C/W - Thermal resistance from junction-to-ambient in TO-92 package; informs maximum allowable power at target case temperature.

Pinout & Package

2N5088TA is housed in a through-hole TO-92 package (JEDEC TO-226AA), with leads arranged in straight-line configuration and standard pinout: Emitter (E), Base (B), Collector (C) - left-to-right when viewing the flat side with leads down.

Pin/Terminal	Circuit Role	Design Meaning
E (Emitter)	Current sink terminal	Reference node for bias network; connects to ground or emitter resistor in common-emitter amplifiers.
B (Base)	Control input	Receives base current to modulate collector current; requires stable DC bias (e.g., voltage divider or current source).
C (Collector)	Output current source	Delivers amplified current to load; typically connected to V_CC via collector resistor or active load.

Key Features

Feature	Design Value
Low-noise operation	2.0 dB NF at I_C = 100 µA enables high-SNR amplification of weak signals from piezoelectric sensors or electret mics.
High DC current gain	h_FE ≥ 300 at I_C = 10 mA allows single-stage gain >100 with minimal external components in discrete amplifier designs.
Wide operating temperature	Junction range −55°C to +150°C supports deployment in industrial control cabinets and automotive under-hood environments.
Stable small-signal parameters	h_fe = 350–1800 and C_eb = 10 pF at 100 kHz ensure predictable AC response in feedback-stabilized preamp topologies.

Applications

Audio Preamplifier Stage	Instrumentation Signal Conditioning
Use Scenario: Amplifying output from electret condenser microphones or magnetic phono cartridges prior to ADC sampling. IC Role / Device Role / Timing Role: Discrete NPN transconductance amplifier providing 40–60 dB voltage gain with <2.5 dB noise contribution. Use Value: Enables high-fidelity analog capture at sub-100 µV input levels without requiring op-amp ICs with higher supply current or cost.	Use Scenario: Boosting low-amplitude signals from strain gauges, thermocouples, or photodiode transimpedance outputs in data acquisition modules. IC Role / Device Role / Timing Role: First-stage discrete gain block with matched h_FE and low V_BE(on) drift over temperature. Use Value: Improves system resolution by reducing effective input-referred noise floor below 5 nV/√Hz in DC-coupled measurement paths.
RF Local Oscillator Buffer	Low-Power Sensor Interface
Use Scenario: Isolating and driving VCO output into mixer LO ports while maintaining phase stability in sub-GHz wireless receivers. IC Role / Device Role / Timing Role: Common-emitter buffer stage with f_T = 50 MHz and C_cb = 4.0 pF minimizing loading and harmonic distortion. Use Value: Prevents VCO pulling and preserves spectral purity without adding PLL loop complexity or active filtering.	Use Scenario: Biasing and amplifying current-mode outputs from gas sensors or MEMS accelerometers in battery-powered IoT nodes. IC Role / Device Role / Timing Role: Ultra-low-I_C amplifier (1–100 µA) with validated h_FE and NF down to 100 µA operating point. Use Value: Extends battery life by enabling functional amplification at <10 µA quiescent current while retaining SNR >60 dB.

Audio Preamplifier Stage

Instrumentation Signal Conditioning

Use Scenario: Amplifying output from electret condenser microphones or magnetic phono cartridges prior to ADC sampling.

IC Role / Device Role / Timing Role: Discrete NPN transconductance amplifier providing 40–60 dB voltage gain with <2.5 dB noise contribution.

Use Value: Enables high-fidelity analog capture at sub-100 µV input levels without requiring op-amp ICs with higher supply current or cost.

Use Scenario: Boosting low-amplitude signals from strain gauges, thermocouples, or photodiode transimpedance outputs in data acquisition modules.

IC Role / Device Role / Timing Role: First-stage discrete gain block with matched h_FE and low V_BE(on) drift over temperature.

Use Value: Improves system resolution by reducing effective input-referred noise floor below 5 nV/√Hz in DC-coupled measurement paths.

RF Local Oscillator Buffer

Low-Power Sensor Interface

Use Scenario: Isolating and driving VCO output into mixer LO ports while maintaining phase stability in sub-GHz wireless receivers.

IC Role / Device Role / Timing Role: Common-emitter buffer stage with f_T = 50 MHz and C_cb = 4.0 pF minimizing loading and harmonic distortion.

Use Value: Prevents VCO pulling and preserves spectral purity without adding PLL loop complexity or active filtering.

Use Scenario: Biasing and amplifying current-mode outputs from gas sensors or MEMS accelerometers in battery-powered IoT nodes.

IC Role / Device Role / Timing Role: Ultra-low-I_C amplifier (1–100 µA) with validated h_FE and NF down to 100 µA operating point.

Use Value: Extends battery life by enabling functional amplification at <10 µA quiescent current while retaining SNR >60 dB.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2N5089TA	V_CEO = 25 V, V_CBO = 30 V, h_FE min 350 at I_C = 10 mA - lower voltage rating but similar noise and gain profile.	Preferred where supply rails ≤ 20 V and thermal margin is constrained; less headroom for transient spikes.	Select 2N5089TA only if V_CC ≤ 20 V and absolute maximum V_CEO margin is not required.
MMBT5088	SOT-23 surface-mount package, same electrical specs, R_θJA = 357 °C/W - higher thermal resistance limits power handling in compact layouts.	Used in space-constrained PCBs where TO-92 footprint is prohibitive; requires careful thermal relief design.	Choose MMBT5088 when board area is critical and average power dissipation stays below 150 mW.

Compared with 2N5089TA and MMBT5088, the 2N5088TA offers the highest V_CEO headroom (30 V) and lowest thermal resistance (200 °C/W) in through-hole form - making it optimal for robust, serviceable, medium-power analog gain stages where reliability and repairability matter.

Availability

2N5088TA is available at Aetrix Electronics and suitable for audio preamplifier stages, instrumentation signal conditioning, RF local oscillator buffering, and low-power sensor interface applications requiring stable component supply and long-term obsolescence management.

Supply support for 2N5088TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N5088TA belongs to ON Semiconductor's legacy general-purpose bipolar transistor product line, designed specifically for discrete high-gain, low-noise amplification in cost-sensitive, reliability-critical analog signal chains.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5088TA?

The 2N5088TA has a maximum collector-emitter voltage (V_CEO) rating of 30 V at T_A = 25°C. This rating applies under open-base conditions and decreases with rising junction temperature. Derating curves confirm usable V_CEO remains above 24 V at T_J = 125°C, supporting reliable operation in 24 V industrial systems.

Does the 2N5088TA support low-current, low-noise operation suitable for sensor interfaces?

Yes - the 2N5088TA delivers a noise figure of 2.0 dB at I_C = 100 µA, R_S = 10 kΩ, and 15.7 kHz bandwidth. Its h_FE remains ≥300 even at I_C = 100 µA, enabling stable gain in ultra-low-power sensor front-ends such as those used with piezoresistive pressure sensors or photodiode TIA stages.

What package type is used for the 2N5088TA, and how does it affect thermal performance?

The 2N5088TA uses a TO-92 package (JEDEC TO-226AA) with thermal resistance R_θJA = 200 °C/W on FR-4 PCB. This allows 625 mW dissipation at 25°C ambient, derating to ~375 mW at 75°C ambient - sufficient for Class-A preamplifier stages without heatsinking in ventilated enclosures.

How does the 2N5088TA compare to the MMBT5088 in terms of electrical performance and layout impact?

The 2N5088TA and MMBT5088 share identical electrical specifications (V_CEO, h_FE, f_T, NF), but differ in package: TO-92 vs SOT-23. The 2N5088TA's lower R_θJA (200 vs 357 °C/W) improves thermal headroom, while its through-hole leads simplify prototyping and serviceability - critical for test equipment and field-repairable systems.

Can the 2N5088TA be used in RF amplifier applications up to what frequency?

The 2N5088TA has an f_T of 50 MHz and C_cb = 4.0 pF, supporting stable common-emitter amplification up to ~20 MHz with proper neutralization and layout. It is documented in typical RF applications including VHF oscillator buffers and IF amplifiers - but not recommended for >30 MHz fundamental operation without impedance-matching verification.

2N5088TA Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 1mA, 10mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 300 @ 100µA, 5V

Power - Max:: 625 mW

Frequency - Transition:: 50MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

2N5088TA FAQ

1.How can I place an order for 2N5088TA through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5088TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5088TA reliable?

The price and inventory of 2N5088TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5088TA is usually 5 days.

3.What payment methods are accepted for 2N5088TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5088TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5088TA?

2N5088TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5088TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5088TA?

For technical support, including 2N5088TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5088TA requirements.

6.How does Aetrix verify that 2N5088TA is sourced from the original manufacturer or authorized distributors?

All 2N5088TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5088TA meets industry standards.

7.What is the process for return or replacement of 2N5088TA?

All 2N5088TA units undergo pre-shipment inspection (PSI). If there is an issue with 2N5088TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5088TA part is unused and in its original packaging.

Return procedure for 2N5088TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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