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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N5088TAR

Name: 2N5088TAR
Brand: onsemi
SKU: 2N5088TAR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N5088TAR

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Datasheet:: 2N5088TAR.pdf

Description:: TRANS NPN 30V 0.1A TO-92-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2N5088TAR from ON Semiconductor is an NPN general-purpose amplifier transistor optimized for low-noise, high-gain signal amplification at collector currents from 1 µA to 50 mA. It features V_CEO = 30 V, h_FE = 300–900 (at I_C = 100 µA to 10 mA), f_T = 50 MHz, NF = 3.0 dB (10 Hz–15.7 kHz), and C_cb = 4.0 pF - making it suitable for preamplifier stages in audio and instrumentation circuits.

For engineers reviewing the 2N5088TAR datasheet, pinout, applications, or equivalent options, key selection criteria include verified low-noise performance at microamp bias, guaranteed h_FE range across multiple I_C conditions, TO-92 package thermal resistance (R_θJA = 200 °C/W), and compatibility with low-voltage, low-power analog front-ends.

Technical Context

The 2N5088TAR operates as a silicon NPN bipolar junction transistor with epitaxial base construction, enabling stable current gain and low noise figure across wide temperature ranges (−55°C to +150°C). Its design emphasizes high h_FE consistency at sub-mA bias points and tight V_BE(on) tolerance (0.8 V at I_C = 10 mA).

It supports linear amplification in common-emitter configuration with validated small-signal parameters: h_fe = 350–1400 (1 kHz), C_eb = 10 pF, and V_CE(sat) ≤ 0.5 V (I_C = 10 mA, I_B = 1 mA), confirming suitability for precision DC-coupled and AC-coupled gain blocks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	30 V - Maximum safe collector-emitter voltage before breakdown; enables use in 24 V rail systems with margin.
h_FE (I_C = 10 mA)	300–400 - Confirmed DC current gain range ensures predictable bias stability in fixed-current amplifier designs.
f_T	50 MHz - Gain-bandwidth product validates usable amplification up to mid-VHF frequencies in RF preamp applications.
Noise Figure	3.0 dB @ 10 Hz–15.7 kHz - Measured low-noise performance critical for microphone preamps and sensor signal conditioning.
P_D (T_A = 25°C)	625 mW - Total power dissipation rating supports continuous operation at ~10 mA I_C with V_CE ≤ 5 V without heatsinking.
C_cb	4.0 pF - Low collector-base capacitance minimizes Miller effect, preserving bandwidth in high-gain CE stages.

Pinout & Package

2N5088TAR is housed in a through-hole TO-92 package (JEDEC TO-92 variant) with standard lead configuration and 200 °C/W junction-to-ambient thermal resistance. The package is RoHS-compliant and rated for −55°C to +150°C operating junction temperature.

Pin/Terminal	Circuit Role	Design Meaning
Emitter (E)	Current sink terminal	Provides low-impedance return path; tied to ground or bias network in CE amplifiers.
Base (B)	Control input	Accepts small input current to modulate collector current; requires stable biasing via resistor divider or current source.
Collector (C)	Output current source	Delivers amplified current to load; connected to supply rail via collector resistor or active load in linear operation.

Key Features

Feature	Design Value
Low-noise amplification	3.0 dB NF at 100 µA I_C enables high-fidelity audio and sensor front-end use without added noise floor degradation.
High DC current gain	h_FE ≥ 300 at I_C = 10 mA ensures robust bias point control in discrete gain stages with minimal base drive.
Wide operating temperature range	−55°C to +150°C junction rating supports deployment in industrial and automotive under-hood environments.
Stable small-signal parameters	h_fe = 350–1400 (1 kHz) and C_eb = 10 pF provide predictable AC response for filter-coupled amplifier designs.

Applications

Audio Preamplifier Stage	Instrumentation Signal Conditioning
Use Scenario: Amplifying weak signals from dynamic microphones or piezoelectric sensors prior to ADC sampling. IC Role / Device Role / Timing Role: Discrete NPN transistor configured in common-emitter topology to deliver 40–60 dB voltage gain with minimal added noise. Use Value: 3.0 dB noise figure and 300+ h_FE ensure clean signal integrity at sub-mA quiescent current, reducing power supply loading in battery-powered recorders.	Use Scenario: Boosting low-level outputs from strain gauges or thermocouples in data acquisition modules. IC Role / Device Role / Timing Role: High-input-impedance emitter-follower buffer or first-stage gain block in multi-stage analog front-ends. Use Value: Tight V_BE(on) (0.8 V) and low I_CBO (50 nA) minimize offset drift and leakage-induced errors over temperature.
Low-Power Sensor Interface	Industrial Control Signal Amplification
Use Scenario: Interfacing photodiode or Hall-effect sensor outputs to microcontroller GPIOs with analog read capability. IC Role / Device Role / Timing Role: Transimpedance or current-amplifier stage converting nanoamp-level sensor current into measurable voltage swing. Use Value: Validated operation down to 1 µA I_C and 300 h_FE at that level enables reliable amplification without active bias compensation circuitry.	Use Scenario: Driving optocoupler LEDs or relays from PLC output modules requiring isolated, low-power switching. IC Role / Device Role / Timing Role: General-purpose switch/amplifier interfacing logic-level control signals to higher-current loads. Use Value: 30 V V_CEO, 100 mA I_C rating, and 0.5 V V_CE(sat) support direct drive of 24 V industrial loads with minimal saturation loss.

Audio Preamplifier Stage

Instrumentation Signal Conditioning

Use Scenario: Amplifying weak signals from dynamic microphones or piezoelectric sensors prior to ADC sampling.

IC Role / Device Role / Timing Role: Discrete NPN transistor configured in common-emitter topology to deliver 40–60 dB voltage gain with minimal added noise.

Use Value: 3.0 dB noise figure and 300+ h_FE ensure clean signal integrity at sub-mA quiescent current, reducing power supply loading in battery-powered recorders.

Use Scenario: Boosting low-level outputs from strain gauges or thermocouples in data acquisition modules.

IC Role / Device Role / Timing Role: High-input-impedance emitter-follower buffer or first-stage gain block in multi-stage analog front-ends.

Use Value: Tight V_BE(on) (0.8 V) and low I_CBO (50 nA) minimize offset drift and leakage-induced errors over temperature.

Low-Power Sensor Interface

Industrial Control Signal Amplification

Use Scenario: Interfacing photodiode or Hall-effect sensor outputs to microcontroller GPIOs with analog read capability.

IC Role / Device Role / Timing Role: Transimpedance or current-amplifier stage converting nanoamp-level sensor current into measurable voltage swing.

Use Value: Validated operation down to 1 µA I_C and 300 h_FE at that level enables reliable amplification without active bias compensation circuitry.

Use Scenario: Driving optocoupler LEDs or relays from PLC output modules requiring isolated, low-power switching.

IC Role / Device Role / Timing Role: General-purpose switch/amplifier interfacing logic-level control signals to higher-current loads.

Use Value: 30 V V_CEO, 100 mA I_C rating, and 0.5 V V_CE(sat) support direct drive of 24 V industrial loads with minimal saturation loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT5088	SOT-23 surface-mount package; identical electrical specs but lower P_D (350 mW) and higher R_θJA (357 °C/W).	Preferred for space-constrained PCBs; requires thermal relief on pads for >50 mA operation.	Select MMBT5088 when board area is limited and reflow-compatible assembly is required.
2N5089	Lower V_CEO (25 V) and V_CBO (30 V); otherwise identical pinout, gain, and noise performance.	Restricted to ≤20 V supply rails; unsuitable for 24 V industrial interfaces where margin is critical.	Choose 2N5089 only if system voltage is capped below 22 V and cost sensitivity outweighs voltage headroom needs.

Compared with MMBT5088 and 2N5089, the 2N5088TAR offers superior thermal management in through-hole layouts and full 30 V breakdown margin - making it the preferred choice for prototyping, repair, and legacy through-hole designs demanding reliability at moderate power levels.

Availability

2N5088TAR is available at Aetrix Electronics and suitable for audio preamplifier stages, instrumentation signal conditioning, and low-power sensor interface applications requiring stable component supply and long-term manufacturability.

Supply support for 2N5088TAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N5088TAR belongs to ON Semiconductor's legacy general-purpose bipolar transistor product line, designed specifically for discrete high-gain, low-noise amplification in cost-sensitive, reliability-critical analog circuits.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5088TAR?

The 2N5088TAR has a maximum collector-emitter voltage (V_CEO) rating of 30 V at T_A = 25°C. This rating is validated per JEDEC test conditions with I_C = 1.0 mA and I_B = 0. Operation above this voltage risks avalanche breakdown. Derating is required above 25°C ambient, and the device must not be operated beyond its absolute maximum junction temperature of +150°C. The 2N5088TAR maintains this rating across its full qualified temperature range.

Does the 2N5088TAR support low-current biasing for ultra-low-power applications?

Yes, the 2N5088TAR is characterized for operation down to I_C = 1 µA, with h_FE ≥ 300 at I_C = 100 µA and V_CE = 5.0 V. Its low I_CBO (50 nA at V_CB = 20 V) and stable h_FE curve below 1 mA make it suitable for micropower sensor interfaces and battery-operated preamplifiers. The 2N5088TAR delivers verified gain and noise performance even at sub-100 µA quiescent currents.

What is the noise figure of the 2N5088TAR and under what conditions is it measured?

The 2N5088TAR has a typical noise figure (NF) of 3.0 dB, measured at I_C = 100 µA, V_CE = 5.0 V, R_S = 10 kΩ, and frequency band 10 Hz to 15.7 kHz. This value is confirmed in the official ON Semiconductor datasheet and reflects performance in audio-band preamplifier configurations. The 2N5088TAR's low NF is enabled by its epitaxial base structure and optimized doping profile - critical for maintaining signal fidelity in sensitive analog front-ends.

Is the 2N5088TAR pin-compatible with other TO-92 NPN transistors like the 2N3904?

No, the 2N5088TAR is not pin-compatible with the 2N3904. While both use TO-92 packages, their pinouts differ: 2N5088TAR follows E-B-C (Emitter-Base-Collector) ordering, whereas 2N3904 uses E-C-B. Swapping them without board revision will cause circuit failure. The 2N5088TAR's pinout is standardized across Fairchild/ON Semiconductor's 2N5088 family and documented in the official datasheet. Always verify pin assignment before substitution.

What thermal derating applies to the 2N5088TAR above 25°C ambient temperature?

The 2N5088TAR has a thermal derating factor of 5.0 mW/°C above 25°C ambient, based on its 625 mW maximum power dissipation at T_A = 25°C. This means allowable power drops linearly: at 75°C ambient, max P_D = 625 − (50 × 5.0) = 375 mW. Junction temperature must remain ≤150°C. The 2N5088TAR's R_θJA = 200 °C/W assumes standard FR-4 PCB mounting per JEDEC JESD51-2; actual performance depends on copper area and airflow.

2N5088TAR Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 1mA, 10mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 300 @ 100µA, 5V

Power - Max:: 625 mW

Frequency - Transition:: 50MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

2N5088TAR FAQ

1.How can I place an order for 2N5088TAR through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5088TAR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5088TAR reliable?

The price and inventory of 2N5088TAR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5088TAR is usually 5 days.

3.What payment methods are accepted for 2N5088TAR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5088TAR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5088TAR?

2N5088TAR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5088TAR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5088TAR?

For technical support, including 2N5088TAR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5088TAR requirements.

6.How does Aetrix verify that 2N5088TAR is sourced from the original manufacturer or authorized distributors?

All 2N5088TAR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5088TAR meets industry standards.

7.What is the process for return or replacement of 2N5088TAR?

All 2N5088TAR units undergo pre-shipment inspection (PSI). If there is an issue with 2N5088TAR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5088TAR part is unused and in its original packaging.

Return procedure for 2N5088TAR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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