onsemi 2N5088TF

Overview

2N5088TF from ON Semiconductor is a low-noise, high-gain NPN bipolar junction transistor designed for general-purpose amplifier applications at collector currents from 1 µA to 50 mA. It features V_CEO = 30 V, V_CBO = 35 V, h_FE ≥ 300 (at I_C = 100 µA), f_T = 50 MHz, and NF = 3.0 dB (at I_C = 100 µA, R_S = 10 kΩ), commonly used in preamplifier stages of audio and instrumentation circuits.

For engineers reviewing the 2N5088TF datasheet, pinout, applications, or equivalent options, key selection considerations include its low-noise performance at microamp bias, high DC current gain stability across temperature, TO-92 package thermal resistance (R_θJA = 200 °C/W), and suitability for low-power analog signal conditioning where gain linearity and noise floor are critical.

Technical Context

The 2N5088TF operates as a single NPN BJT with fixed-emitter configuration and common-emitter amplification topology. Its design emphasizes low-noise operation via optimized base doping and geometry, enabling stable h_FE > 300 at I_C = 100 µA and < 400 at I_C = 10 mA, while maintaining V_CE(sat) ≤ 0.5 V at I_C = 10 mA / I_B = 1 mA.

It supports continuous operation from –55 °C to +150 °C junction temperature, with thermal derating starting above 25 °C (5.0 mW/°C), and exhibits C_cb = 4.0 pF and C_eb = 10 pF at specified bias conditions - parameters directly influencing high-frequency small-signal bandwidth and stability in discrete amplifier designs.

Key Specifications

Pinout & Package

2N5088TF is housed in a through-hole TO-92 package (JEDEC TO-92 variant) with standard three-terminal configuration: Collector (C), Base (B), Emitter (E). The package provides mechanical robustness and moderate thermal performance (R_θJA = 200 °C/W) for low-to-medium power analog applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN amplifier applications.

Compared with 2N5089 and MMBT5088, the 2N5088TF offers the highest V_CEO margin (30 V) and best thermal performance in through-hole form, making it optimal for prototyping, repair, and industrial analog designs where reliability at elevated ambient temperatures is essential.

Availability

2N5088TF is available at Aetrix Electronics and suitable for audio preamplifier stages, instrumentation signal conditioning, low-power sensor interfaces, industrial analog signal isolation, and precision DC-coupled amplifier circuits requiring stable component supply and long-term manufacturability.

Supply support for 2N5088TF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N5088TF belongs to ON Semiconductor's legacy general-purpose bipolar transistor product line, originally developed by Fairchild Semiconductor to deliver high-gain, low-noise amplification in cost-sensitive, high-reliability analog applications.

FAQ

What is the maximum collector-emitter voltage rating for 2N5088TF?

The 2N5088TF has a maximum collector-emitter voltage (V_CEO) rating of 30 V at T_A = 25 °C. This rating applies under DC or pulsed conditions with duty cycle ≤ 2.0% and pulse width ≤ 300 µs. Exceeding this voltage risks avalanche breakdown and permanent device failure. Designers should maintain at least 20% voltage margin in production circuits using the 2N5088TF to ensure long-term reliability.

Does 2N5088TF support operation at elevated temperatures?

Yes, the 2N5088TF is rated for junction temperatures from –55 °C to +150 °C. Its electrical characteristics - including h_FE, V_BE(on), and NF - are specified at 25 °C but remain functional across the full range. Derating of power dissipation begins above 25 °C at 5.0 mW/°C, meaning usable power drops to ~375 mW at 100 °C ambient. Thermal design must account for R_θJA = 200 °C/W when using the 2N5088TF in enclosed or high-temperature environments.

What is the typical noise figure of 2N5088TF and under what conditions is it measured?

The 2N5088TF has a typical noise figure (NF) of 3.0 dB, measured at I_C = 100 µA, V_CE = 5.0 V, R_S = 10 kΩ, and frequency band 10 Hz to 15.7 kHz. This value reflects its optimized low-noise performance in microphone preamplifier and sensor front-end applications. NF increases at higher collector currents or source impedances outside this range - e.g., rising to ~4.0 dB at I_C = 1 mA - so biasing must match the target application's noise requirements.

Can 2N5088TF be used as a direct replacement for 2N3904 in existing designs?

The 2N5088TF is not a pin-compatible or functional drop-in replacement for the 2N3904. While both are TO-92 NPN transistors, the 2N5088TF has significantly higher h_FE (≥300 vs. 100–300), lower noise (3.0 dB vs. ~5 dB), and different V_CEO/V_CBO ratings. Substituting without circuit review may cause instability, saturation, or unintended bias shifts. Use the 2N5088TF only after verifying bias point, gain margin, and thermal limits in the target design.

What package type does 2N5088TF use and how does it affect thermal performance?

The 2N5088TF uses a TO-92 through-hole plastic package with standard lead spacing. Its thermal resistance from junction to ambient (R_θJA) is 200 °C/W on a FR-4 PCB (1.6" × 1.6" × 0.06"). This is substantially better than the SOT-23 variant (MMBT5088, R_θJA = 357 °C/W), making the 2N5088TF more suitable for continuous-duty analog amplifiers where self-heating must be minimized. Proper PCB copper pour around the emitter pad further improves heat dissipation in the 2N5088TF.