onsemi 2N5088TFR

Overview

2N5088TFR from ON Semiconductor is an NPN general-purpose amplifier transistor optimized for low-noise, high-gain signal amplification at collector currents from 1 µA to 50 mA. It features V_CEO = 30 V, V_CBO = 35 V, h_FE ≥ 300 (at I_C = 100 µA), f_T = 50 MHz, and NF = 3.0 dB (at I_C = 100 µA, R_S = 10 kΩ), commonly used in preamplifier stages of audio and instrumentation circuits.

For engineers reviewing the 2N5088TFR datasheet, pinout, applications, or equivalent options, key selection criteria include its low-noise performance at microamp bias levels, stable h_FE across temperature, TO-92 package thermal resistance (R_θJA = 200 °C/W), and compatibility with low-voltage, low-power analog front-ends requiring gain stability and minimal distortion.

Technical Context

The 2N5088TFR operates as a discrete NPN bipolar junction transistor with fixed-emitter configuration and base-controlled current amplification. Its design emphasizes low-noise operation below 15.7 kHz bandwidth and high DC current gain at ultra-low collector currents - enabling precision biasing in micropower sensor interfaces and battery-operated signal conditioning.

It supports linear amplification with V_CE(sat) ≤ 0.5 V at I_C = 10 mA / I_B = 1 mA and exhibits predictable h_FE variation (±20%) over −55°C to +150°C junction temperature range, making it suitable for industrial-grade analog subsystems where thermal drift must be minimized without active compensation.

Key Specifications

Pinout & Package

2N5088TFR is housed in a through-hole TO-92 package with standardized lead orientation: Emitter (E), Base (B), Collector (C) arranged left-to-right when flat side faces viewer and leads point downward.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Compared with 2N5088TFR, the 2N5089 offers higher minimum h_FE but reduced voltage capability, while the MMBT5088 provides identical electrical behavior in a smaller footprint at the cost of thermal performance - making 2N5088TFR optimal for through-hole, thermally demanding, or legacy-compatible designs.

Availability

2N5088TFR is available at Aetrix Electronics and suitable for audio preamplifiers, instrumentation sensor interfaces, and low-power oscillator circuits requiring stable component supply and long-term obsolescence management.

Supply support for 2N5088TFR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N5088TFR belongs to ON Semiconductor's legacy general-purpose bipolar transistor product line, designed for high-reliability analog signal conditioning in cost-sensitive, thermally stable applications where discrete gain elements remain preferred over integrated alternatives.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5088TFR?

The 2N5088TFR has a maximum collector-emitter voltage (V_CEO) rating of 30 V at T_A = 25°C. This rating is defined under DC conditions with I_B = 0 and represents the upper limit before avalanche breakdown occurs. Operation above this voltage risks permanent device failure, and derating is recommended for elevated temperatures or pulsed conditions per the absolute maximum ratings table.

Does the 2N5088TFR support low-noise operation at sub-millamp bias currents?

Yes, the 2N5088TFR is specifically characterized for low-noise performance at I_C = 100 µA, delivering a noise figure of 3.0 dB over 10 Hz–15.7 kHz with R_S = 10 kΩ. Its optimized emitter-base junction and low 1/f noise make it suitable for micropower sensor amplifiers where traditional op-amps may consume excessive quiescent current or lack sufficient gain-bandwidth.

What package type does the 2N5088TFR use, and is it compatible with standard TO-92 sockets?

The 2N5088TFR uses a TO-92 plastic package with E-B-C lead configuration (flat side facing viewer, leads down). It is mechanically and electrically compatible with industry-standard TO-92 sockets and hand-soldering fixtures. Pin spacing (0.1" between outer leads) and body dimensions match JEDEC TO-92 specifications, ensuring drop-in replacement in legacy through-hole assemblies.

How does the 2N5088TFR's DC current gain vary with temperature and collector current?

The 2N5088TFR maintains h_FE ≥ 300 at I_C = 100 µA across −55°C to +150°C, with typical variation of ±20% over that range. At I_C = 10 mA, h_FE rises to 300–400, peaking near 900–1200 at I_C = 1 mA. The device exhibits predictable, monotonic h_FE vs. I_C curves, enabling stable bias design without active compensation in most linear applications.

Can the 2N5088TFR be used in oscillator circuits, and what is its usable frequency range?

Yes, the 2N5088TFR is routinely used in discrete LC and crystal oscillator topologies due to its 50 MHz current-gain bandwidth (f_T) and low C_cb = 4.0 pF. It supports stable oscillation up to ~10 MHz in Colpitts configurations with proper biasing and Q-factor control. For higher frequencies, layout parasitics and thermal effects become limiting factors - verified operation is confirmed up to 8 MHz in published reference designs using the 2N5088TFR.