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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N5089

Name: 2N5089
Brand: onsemi
SKU: 2N5089
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N5089

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body

Datasheet:: 2N5089.pdf

Description:: TRANS NPN 25V 0.05A TO92

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2N5089 from onsemi is an NPN silicon small-signal amplifier transistor in TO-92 package, rated for V_CEO = 25 V, I_C = 50 mA, and f_T = 50 MHz, with h_FE up to 1200 at I_C = 10 mA - used in low-noise audio preamplifier stages and RF front-end amplification.

For engineers reviewing the 2N5089 datasheet, pinout, applications, or equivalent options, key selection criteria include its 2.0 dB noise figure at 1 kHz, 4.0 pF C_cb, V_CE(sat) ≤ 0.5 V at I_C/I_B = 10, and Pb-free TO-92 packaging compatibility with through-hole assembly.

Technical Context

The 2N5089 operates as a linear NPN bipolar junction transistor optimized for high-current-gain, low-noise amplification in analog signal chains. Its h_FE ranges from 300–400 at I_C = 10 mA and extends to 450–1200 across 100 µA–10 mA bias points, supporting stable DC-coupled gain staging.

Thermal performance is defined by R_JA = 200°C/W (PCB-mounted) and R_JC = 83.3°C/W, enabling operation from −55°C to +150°C junction temperature. Noise characteristics are specified at V_CE = 5 V, with NF = 2.0 dB at I_C = 100 µA and RS = 1 kΩ.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	25 Vdc - maximum collector-emitter voltage before breakdown under open-base conditions; defines safe operating voltage headroom in amplifier supply rails.
I_C (max)	50 mAdc - continuous collector current limit; sets upper bound for quiescent bias and output swing capability in Class-A stages.
f_T	50 MHz - unity-gain bandwidth at I_C = 500 µA, V_CE = 5 V; enables stable gain up to ~5–10 MHz in practical common-emitter configurations.
h_FE (min/max)	300–1200 - DC current gain range across I_C = 100 µA to 10 mA; supports predictable bias design with minimal degeneration in low-power amplifiers.
NF	2.0 dB - noise figure at 1 kHz, I_C = 100 µA, R_S = 1 kΩ; confirms suitability for microphone preamps and sensor interface circuits requiring sub-3 dB noise.
C_cb	4.0 pF - collector-base capacitance at V_CB = 5 V; determines Miller-effect bandwidth limitation and stability margin in high-gain stages.

Pinout & Package

2N5089 is housed in a standard TO-92 (Case 29, Style 1) plastic package with axial leads, compatible with manual soldering and wave soldering per IPC-J-STD-020. Lead finish is Pb-free per onsemi's RoHS-compliant manufacturing.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal	Reference node for bias network; connects to ground or emitter degeneration resistor in common-emitter topology.
2 (Base)	Control input	Accepts base drive current to modulate collector current; requires current-limiting resistor when driven from logic or op-amp outputs.
3 (Collector)	Current source terminal	Delivers amplified output current to load or next stage; connects to supply rail via collector resistor in single-supply amplifiers.

Key Features

Feature	Design Value
Low noise figure	2.0 dB at 1 kHz enables high-fidelity signal amplification in microphone and piezoelectric sensor interfaces without added noise floor degradation.
High h_FE consistency	Min 300 / Max 1200 across production lot ensures stable DC bias point without individual transistor trimming in production assemblies.
Pb-free TO-92 packaging	RoHS-compliant lead finish and JEDEC-standard footprint support automated insertion and reflow-compatible repair workflows.
Wide temperature range	−55°C to +150°C operating junction temperature allows deployment in automotive engine compartments and industrial control enclosures.

Applications

Audio Preamp Stage	RF Signal Amplifier
Use Scenario: First-stage amplification of electret microphone output signals in portable voice recorders and VoIP handsets. IC Role / Device Role / Timing Role: Low-noise NPN transconductance amplifier configured in common-emitter topology with emitter degeneration. Use Value: 2.0 dB noise figure and 1200 h_FE enable >60 dB SNR over 20 Hz–20 kHz with <100 µA quiescent current, minimizing battery drain.	Use Scenario: Intermediate-frequency (IF) amplification in AM/FM radio receivers operating at 455 kHz or 10.7 MHz. IC Role / Device Role / Timing Role: Linear small-signal amplifier with tuned collector load for selective gain at fixed IF frequency. Use Value: 50 MHz f_T and 4.0 pF C_cb support stable 20–30 dB gain at 10 MHz with minimal phase distortion and no neutralization required.
Instrumentation Sensor Interface	Industrial Analog Front-End
Use Scenario: Amplification of millivolt-level thermocouple or strain gauge bridge outputs in data acquisition modules. IC Role / Device Role / Timing Role: DC-coupled differential pair input stage with matched h_FE and low V_BE drift. Use Value: h_FE ≥ 300 at I_C = 100 µA and −55°C to +150°C operation ensure stable gain calibration across environmental stress testing.	Use Scenario: Signal conditioning for 4–20 mA loop-powered sensors in PLC analog input cards. IC Role / Device Role / Timing Role: Current-to-voltage converter driver with low V_CE(sat) and thermal-stable h_FE. Use Value: V_CE(sat) ≤ 0.5 V at I_C/I_B = 10 reduces power dissipation in 24 V loop designs, extending component lifetime under continuous operation.

Audio Preamp Stage

RF Signal Amplifier

Use Scenario: First-stage amplification of electret microphone output signals in portable voice recorders and VoIP handsets.

IC Role / Device Role / Timing Role: Low-noise NPN transconductance amplifier configured in common-emitter topology with emitter degeneration.

Use Value: 2.0 dB noise figure and 1200 h_FE enable >60 dB SNR over 20 Hz–20 kHz with <100 µA quiescent current, minimizing battery drain.

Use Scenario: Intermediate-frequency (IF) amplification in AM/FM radio receivers operating at 455 kHz or 10.7 MHz.

IC Role / Device Role / Timing Role: Linear small-signal amplifier with tuned collector load for selective gain at fixed IF frequency.

Use Value: 50 MHz f_T and 4.0 pF C_cb support stable 20–30 dB gain at 10 MHz with minimal phase distortion and no neutralization required.

Instrumentation Sensor Interface

Industrial Analog Front-End

Use Scenario: Amplification of millivolt-level thermocouple or strain gauge bridge outputs in data acquisition modules.

IC Role / Device Role / Timing Role: DC-coupled differential pair input stage with matched h_FE and low V_BE drift.

Use Value: h_FE ≥ 300 at I_C = 100 µA and −55°C to +150°C operation ensure stable gain calibration across environmental stress testing.

Use Scenario: Signal conditioning for 4–20 mA loop-powered sensors in PLC analog input cards.

IC Role / Device Role / Timing Role: Current-to-voltage converter driver with low V_CE(sat) and thermal-stable h_FE.

Use Value: V_CE(sat) ≤ 0.5 V at I_C/I_B = 10 reduces power dissipation in 24 V loop designs, extending component lifetime under continuous operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2N5088	V_CEO = 30 V (vs. 25 V), V_CBO = 35 V (vs. 30 V), h_FE min = 300 at same test conditions; otherwise identical package, pinout, and noise specs.	Preferred where higher supply rail margin is needed (e.g., 24 V systems with transient spikes); same PCB layout and bias network.	Select 2N5088 when V_CEO derating headroom is critical; otherwise 2N5089 offers identical performance at lower voltage rating.
BC548C	h_FE = 420–800 (lower max), NF = 3.5 dB (higher), C_cb = 5.0 pF (higher); TO-92 package, same pinout but different internal die construction.	Acceptable in non-critical audio or general-purpose switching where noise and bandwidth are secondary; not recommended for <3 dB NF requirements.	Choose BC548C only for cost-sensitive, non-low-noise applications; verify h_FE spread and noise performance against system SNR targets.

Compared with 2N5088 and BC548C, the 2N5089 delivers the lowest noise figure (2.0 dB) and highest f_T (50 MHz) among TO-92 NPNs in its class, making it optimal for precision analog front-ends where signal integrity outweighs voltage margin or cost constraints.

Availability

2N5089 is available at Aetrix Electronics and suitable for audio preamplifier stages, RF signal amplifiers, and instrumentation sensor interfaces requiring stable component supply, long-term obsolescence management, and RoHS-compliant through-hole assembly.

Supply support for 2N5089 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N5089 belongs to onsemi's legacy NPN amplifier transistor family designed specifically for low-noise, high-gain analog signal conditioning in space-constrained through-hole applications.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5089?

The 2N5089 has a maximum collector-emitter voltage (V_CEO) rating of 25 Vdc under open-base conditions. This value is confirmed in the Absolute Maximum Ratings table of the official onsemi datasheet (2N5088/D, Rev. 3). Exceeding this voltage risks avalanche breakdown and permanent device failure. Designers should maintain at least 20% derating margin - i.e., limit V_CE to ≤20 V in continuous operation - especially at elevated temperatures.

Does the 2N5089 have Pb-free packaging?

Yes, the 2N5089 is available in Pb-free TO-92 packaging, designated by the "G" suffix (e.g., 2N5089G) per onsemi's ordering nomenclature. The Pb-free finish complies with RoHS Directive 2011/65/EU and supports standard reflow and wave soldering profiles. The mechanical dimensions, pinout, and electrical specifications remain identical to leaded versions - no layout or process changes are required when migrating to 2N5089G.

What is the noise figure of the 2N5089 and under what conditions is it measured?

The 2N5089 has a noise figure (NF) of 2.0 dB, measured at I_C = 100 µA, V_CE = 5.0 Vdc, R_S = 1.0 kΩ, and f = 1.0 kHz, per the Electrical Characteristics table in the onsemi 2N5088/D datasheet. This low NF reflects its suitability for sensitive analog front-ends. Performance degrades at higher frequencies or source impedances outside this condition - designers must consult Figure 7 (Noise Figure vs. R_S) for system-specific validation.

Is the 2N5089 pin-compatible with the 2N5088?

Yes, the 2N5089 is fully pin-compatible with the 2N5088: both use identical TO-92 (Case 29, Style 1) packaging with Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector. No PCB layout change is needed when substituting between them. However, the 2N5088 offers higher V_CEO (30 V) and V_CBO (35 V), while the 2N5089 provides identical h_FE, noise, and capacitance specs - selection depends on voltage margin requirements.

What is the thermal resistance from junction to ambient for the 2N5089?

The thermal resistance from junction to ambient (R_JA) for the 2N5089 is 200°C/W when mounted on a typical printed circuit board, as specified in the Thermal Characteristics section of the onsemi 2N5088/D datasheet. This value assumes standard JEDEC test conditions (single device, 1-inch² copper pad). Actual R_JA improves with larger copper areas or forced airflow - designers should verify junction temperature using T_J = T_A + (P_D × R_JA) under worst-case power dissipation.

2N5089 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 50 mA

Voltage - Collector Emitter Breakdown (Max):: 25 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 1mA, 10mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 400 @ 100µA, 5V

Power - Max:: 625 mW

Frequency - Transition:: 50MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92 (TO-226)

2N5089 FAQ

1.How can I place an order for 2N5089 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5089 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5089 reliable?

The price and inventory of 2N5089 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5089 is usually 5 days.

3.What payment methods are accepted for 2N5089?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5089 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5089?

2N5089 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5089 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5089?

For technical support, including 2N5089 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5089 requirements.

6.How does Aetrix verify that 2N5089 is sourced from the original manufacturer or authorized distributors?

All 2N5089 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5089 meets industry standards.

7.What is the process for return or replacement of 2N5089?

All 2N5089 units undergo pre-shipment inspection (PSI). If there is an issue with 2N5089, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5089 part is unused and in its original packaging.

Return procedure for 2N5089:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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