onsemi 2N5089G

Overview

2N5089G from onsemi is an NPN silicon small-signal amplifier transistor in TO-92 package, rated for V_CEO = 25 V, I_C = 50 mA, and f_T = 50 MHz, with h_FE = 400–1200 at I_C = 1–10 mA, optimized for low-noise audio preamplifier and signal conditioning stages.

For engineers reviewing the 2N5089G datasheet, pinout, applications, or equivalent options, key selection criteria include its 2.0 dB noise figure at I_C = 100 µA, V_CE(sat) ≤ 0.5 V at I_C/I_B = 10, and guaranteed h_FE minimum of 400 at I_C = 1.0 mA - critical for high-gain, low-distortion analog front-ends.

Technical Context

The 2N5089G employs a planar epitaxial NPN structure with gold-doped base for enhanced minority-carrier lifetime control, enabling stable h_FE across temperature (−55°C to +150°C) and low 1/f noise corner frequency below 100 Hz. Its C_eb = 10 pF and C_cb = 4.0 pF support wideband amplification up to 50 MHz.

Designed for linear operation in Class-A bias configurations, it delivers consistent small-signal current gain (h_fe = 450–1800) at 1 kHz and maintains NF ≤ 2.0 dB with R_S = 1 kΩ - making it suitable for microphone preamps and instrumentation amplifier input stages where source impedance matching and noise optimization are essential.

Key Specifications

Pinout & Package

2N5089G is housed in a Pb-free TO-92 (Case 29-10) plastic package with straight or bent leads, featuring 1 W power handling capability and standardized lead assignment per Style 2: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal amplifier applications.

Compared with 2N5089G, the 2N5088G offers higher voltage tolerance but sacrifices 1 dB of noise performance, while the BC547C trades guaranteed low-noise behavior for wider h_FE variability and less stringent specification control - making 2N5089G the optimal choice for precision analog signal paths demanding both gain stability and noise fidelity.

Availability

2N5089G is available at Aetrix Electronics and suitable for audio preamplifiers, sensor interface circuits, and low-power instrumentation requiring stable component supply, RoHS compliance, and verified low-noise transistor performance.

Supply support for 2N5089G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N5089G belongs to onsemi's legacy NPN amplifier transistor family, designed specifically for high-fidelity, low-noise analog signal amplification in space-constrained, cost-sensitive applications where discrete transistor performance remains critical.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5089G?

The 2N5089G has a maximum collector-emitter voltage (V_CEO) rating of 25 Vdc. This value is specified under test conditions of I_C = 1.0 mAdc and I_B = 0, and represents the absolute maximum voltage that can be applied between collector and emitter before breakdown occurs. Exceeding this rating risks permanent device damage, and design margins should maintain operation below 20 V for long-term reliability in 2N5089G-based circuits.

Does the 2N5089G have a guaranteed minimum DC current gain (h_FE)?

Yes, the 2N5089G guarantees a minimum h_FE of 400 at I_C = 1.0 mAdc and V_CE = 5.0 Vdc, with typical values reaching up to 1200 at I_C = 10 mAdc. This tight h_FE distribution supports predictable biasing in discrete amplifier designs without requiring gain-bin sorting or feedback trimming, and is validated per onsemi's production test flow for every 2N5089G unit.

What is the noise figure of the 2N5089G and under what conditions is it measured?

The 2N5089G has a noise figure (NF) of 2.0 dB, measured at I_C = 100 µAdc, V_CE = 5.0 Vdc, R_S = 1.0 kΩ, and f = 1.0 kHz. This low NF reflects its gold-doped base construction and optimized geometry for minimal 1/f and thermal noise generation, making the 2N5089G especially valuable in microphone preamplifier and sensor front-end applications where preserving signal integrity is paramount.

Is the 2N5089G RoHS compliant and what package does it use?

Yes, the 2N5089G is RoHS compliant and uses a Pb-free TO-92 (Case 29-10) plastic package with straight or bent leads. The "G" suffix explicitly denotes the Pb-free variant, and the package conforms to JEDEC TO-226 standards with mechanical dimensions documented in onsemi's case outline drawing 29-10. This ensures compatibility with standard through-hole assembly processes and automated optical inspection systems.

How does the 2N5089G differ from the 2N5088G in practical circuit design?

The 2N5089G differs from the 2N5088G primarily in lower V_CEO (25 V vs. 30 V), lower noise figure (2.0 dB vs. 3.0 dB), and higher guaranteed h_FE (400 min vs. 300 min at I_C = 1 mA). In practice, this means the 2N5089G is preferred for low-noise, high-gain audio and sensor interfaces where SNR and bias stability are critical, whereas the 2N5088G suits higher-voltage, less noise-sensitive applications - both share identical pinout and package, allowing direct substitution only when voltage and noise requirements align.