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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N5089_J18Z

Name: 2N5089_J18Z
Brand: onsemi
SKU: 2N5089_J18Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N5089_J18Z

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA)

Datasheet:: 2N5089_J18Z.pdf

Description:: TRANS NPN 25V 0.1A TO-92-3

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Product details

Overview

2N5089_J18Z from ON Semiconductor is a low-noise, high-gain NPN general-purpose amplifier optimized for audio preamplifier, sensor signal conditioning, and low-level analog amplification stages at collector currents from 1 µA to 50 mA. It features V_CEO = 25 V, h_FE = 400–1200 (at I_C = 10 mA), f_T = 50 MHz, NF = 2.0 dB (at I_C = 100 µA), and TO-92 package with C-B-E pinout.

For engineers reviewing the 2N5089_J18Z datasheet, pinout, applications, or equivalent options, this page delivers verified electrical specs, thermal behavior, noise performance, junction-to-ambient thermal resistance (R_θJA = 200 °C/W), and real-world use cases in precision analog front-ends and battery-powered instrumentation.

Technical Context

The 2N5089_J18Z operates as a discrete silicon NPN bipolar junction transistor with fixed-emitter biasing capability and linear small-signal amplification characteristics. Its design emphasizes low base spreading resistance and optimized emitter geometry to achieve 2.0 dB noise figure at 100 µA and stable h_fe > 450 across 1–10 mA collector current range.

It supports DC-coupled and AC-coupled configurations with validated V_BE(on) = 0.8 V (I_C = 10 mA) and V_CE(sat) = 0.5 V (I_C = 10 mA, I_B = 1 mA), enabling reliable operation in Class-A and Class-AB small-signal stages up to 125 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	25 V - Maximum safe collector-emitter voltage before breakdown; defines headroom for single-supply 15–20 V amplifier rails.
h_FE (I_C = 10 mA)	400–1200 - High and wide DC current gain range enables stable biasing with minimal base drive current variation.
f_T	50 MHz - Unity-gain bandwidth supports audio and low-MHz signal amplification without phase degradation.
Noise Figure	2.0 dB @ I_C = 100 µA - Ultra-low noise performance critical for microphone preamps and thermocouple amplifiers.
R_θJA	200 °C/W - Thermal resistance on standard PCB; limits max continuous power dissipation to 625 mW at 25 °C ambient.
C_cb	4.0 pF - Low collector-base capacitance minimizes Miller effect in high-gain CE configurations.
P_D	625 mW - Absolute maximum power rating sets practical limit for linear operation in TO-92 housing.

Pinout & Package

2N5089_J18Z is housed in a through-hole TO-92 package (JEDEC TO-92 variant), with molded plastic case, axial leads, and standard lead spacing of 0.1 inch (2.54 mm). The package provides mechanical robustness and solderability compatibility with legacy wave-solder and hand-solder processes.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main current output terminal	Connected to load resistor or next stage input; carries full collector current; requires heatsinking above 200 mW.
Base (B)	Control electrode	Accepts low-current bias; sensitive to ESD; requires series resistor (≥1 kΩ) when driven from logic or op-amp outputs.
Emitter (E)	Current reference node	Typically grounded or connected to emitter degeneration resistor; establishes DC operating point and AC signal reference.

Key Features

Feature	Design Value
Low-noise amplification	2.0 dB NF at 100 µA enables high-SNR signal recovery in micropower sensor interfaces.
High DC current gain	h_FE ≥ 400 at 10 mA ensures stable biasing with minimal base current error in discrete gain blocks.
Wide operating temperature	−55 °C to +150 °C junction range supports industrial and automotive under-hood applications.
Low saturation voltage	V_CE(sat) ≤ 0.5 V at I_C/I_B = 10 enables efficient Class-A operation with <100 mV headroom loss.
Stable small-signal gain	h_fe = 450–1800 (1 kHz, 1 mA) ensures predictable AC voltage gain in RC-coupled amplifier designs.

Applications

Audio Pre-amplifier	Thermocouple Signal Amplifier
Use Scenario: Boosting weak microphone or piezoelectric transducer signals prior to ADC sampling in portable recorders. IC Role / Device Role / Timing Role: Discrete NPN transistor configured in common-emitter topology with emitter degeneration for linearity and gain stability. Use Value: 2.0 dB noise figure and h_FE > 400 ensure >70 dB SNR at 100 µA bias, minimizing battery drain while preserving signal fidelity.	Use Scenario: Amplifying microvolt-level thermocouple outputs (e.g., Type-K) in HVAC controllers and industrial temperature monitors. IC Role / Device Role / Timing Role: Low-drift, low-noise front-end amplifier with matched base resistors and guarded layout to reject common-mode noise. Use Value: Sub-2 dB noise figure and −55 °C to +150 °C operation allow direct cold-junction compensation without external chopper stabilization.
Photodiode Transimpedance Stage	Low-Power Sensor Interface
Use Scenario: Converting nanoampere photocurrent from ambient light sensors into measurable voltage in IoT nodes. IC Role / Device Role / Timing Role: NPN configured as grounded-base amplifier to minimize input capacitance and maximize bandwidth. Use Value: 4.0 pF C_cb and 50 MHz f_T support >1 MHz signal bandwidth with sub-pF effective input capacitance in TIA feedback paths.	Use Scenario: Biasing and amplifying output of MEMS accelerometers or humidity sensors in wearables with 3.3 V supply. IC Role / Device Role / Timing Role: Discrete gain element in rail-to-rail input buffer stage, operating at 10–100 µA quiescent current. Use Value: Stable h_FE down to 1 µA and 2.0 dB NF enable accurate DC-coupled amplification without active bias compensation circuitry.

Audio Pre-amplifier

Thermocouple Signal Amplifier

Use Scenario: Boosting weak microphone or piezoelectric transducer signals prior to ADC sampling in portable recorders.

IC Role / Device Role / Timing Role: Discrete NPN transistor configured in common-emitter topology with emitter degeneration for linearity and gain stability.

Use Value: 2.0 dB noise figure and h_FE > 400 ensure >70 dB SNR at 100 µA bias, minimizing battery drain while preserving signal fidelity.

Use Scenario: Amplifying microvolt-level thermocouple outputs (e.g., Type-K) in HVAC controllers and industrial temperature monitors.

IC Role / Device Role / Timing Role: Low-drift, low-noise front-end amplifier with matched base resistors and guarded layout to reject common-mode noise.

Use Value: Sub-2 dB noise figure and −55 °C to +150 °C operation allow direct cold-junction compensation without external chopper stabilization.

Photodiode Transimpedance Stage

Low-Power Sensor Interface

Use Scenario: Converting nanoampere photocurrent from ambient light sensors into measurable voltage in IoT nodes.

IC Role / Device Role / Timing Role: NPN configured as grounded-base amplifier to minimize input capacitance and maximize bandwidth.

Use Value: 4.0 pF C_cb and 50 MHz f_T support >1 MHz signal bandwidth with sub-pF effective input capacitance in TIA feedback paths.

Use Scenario: Biasing and amplifying output of MEMS accelerometers or humidity sensors in wearables with 3.3 V supply.

IC Role / Device Role / Timing Role: Discrete gain element in rail-to-rail input buffer stage, operating at 10–100 µA quiescent current.

Use Value: Stable h_FE down to 1 µA and 2.0 dB NF enable accurate DC-coupled amplification without active bias compensation circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2N5088	V_CEO = 30 V, h_FE = 300–900 (I_C = 10 mA), NF = 3.0 dB	Higher breakdown margin but higher noise; suitable where supply exceeds 20 V and SNR > 65 dB is acceptable.	Select 2N5088 only if V_CEO > 25 V is required and noise sensitivity is secondary.
MMBT5089	SOT-23 surface-mount package, same electrical specs, R_θJA = 357 °C/W, lower P_D = 350 mW	Enables miniaturized PCB layouts but requires thermal relief and derating above 85 °C ambient.	Choose MMBT5089 for space-constrained designs where reflow compatibility and footprint reduction outweigh thermal derating needs.

Compared with 2N5089_J18Z, 2N5088 offers higher voltage tolerance at the cost of noise performance, while MMBT5089 retains identical gain and noise specs but trades TO-92 thermal robustness for SMT manufacturability-making 2N5089_J18Z optimal for prototyping, repair, and thermally demanding through-hole applications.

Availability

2N5089_J18Z is available at Aetrix Electronics and suitable for audio pre-amplifier circuits, thermocouple signal conditioning, photodiode transimpedance stages, low-power sensor interfaces, and industrial analog front-ends requiring stable component supply and long-term obsolescence management.

Supply support for 2N5089_J18Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N5089_J18Z belongs to ON Semiconductor's legacy general-purpose bipolar transistor product line, designed specifically for high-fidelity, low-noise analog signal amplification in cost-sensitive and reliability-critical linear circuits.

FAQ

What is the maximum collector-emitter voltage rating for 2N5089_J18Z?

The 2N5089_J18Z has a maximum collector-emitter voltage (V_CEO) rating of 25 V at T_A = 25 °C. This rating decreases with rising ambient temperature per the device's derating curve, and operation above this value risks avalanche breakdown and permanent damage. Always maintain at least 20% voltage margin in production designs using 2N5089_J18Z.

Does 2N5089_J18Z have a specified noise figure, and under what conditions?

Yes, the 2N5089_J18Z has a typical noise figure of 2.0 dB measured at I_C = 100 µA, V_CE = 5.0 V, R_S = 10 kΩ, and frequency band 10 Hz to 15.7 kHz. This value is confirmed in the official ON Semiconductor datasheet and reflects its suitability for ultra-low-noise pre-amplification tasks where signal integrity is paramount.

What package type is used for 2N5089_J18Z, and what are its key mechanical features?

The 2N5089_J18Z uses the TO-92 through-hole package with standard C-B-E pinout (viewed from flat side, leads down). It features a molded epoxy body, 0.1-inch lead pitch, and JEDEC-compliant dimensions (4.6 × 3.3 × 4.0 mm). This package supports manual assembly, wave soldering, and provides superior thermal dissipation compared to SOT-23 variants like MMBT5089.

How does the DC current gain (h_FE) of 2N5089_J18Z vary with collector current?

The 2N5089_J18Z exhibits h_FE = 400–1200 at I_C = 10 mA, 350–450 at I_C = 1.0 mA, and 300–400 at I_C = 100 µA (all at V_CE = 5.0 V). Gain peaks near 1–10 mA and declines at extremes-this behavior is documented in the "Typical Pulsed Current Gain vs Collector Current" graph of the 2N5089_J18Z datasheet and must be accounted for in bias network design.

Can 2N5089_J18Z be used in surface-mount designs?

No-2N5089_J18Z is exclusively offered in the through-hole TO-92 package and is not compatible with SMT reflow or pick-and-place processes. For surface-mount equivalents, engineers should consider the functionally matched MMBT5089 (SOT-23), which shares identical electrical specifications but differs in thermal resistance and mounting method. 2N5089_J18Z remains ideal for breadboarding, repair, and legacy through-hole production.

2N5089_J18Z Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA)

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 25 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 1mA, 10mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 400 @ 100µA, 5V

Power - Max:: 625 mW

Frequency - Transition:: 50MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

2N5089_J18Z FAQ

1.How can I place an order for 2N5089_J18Z through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5089_J18Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5089_J18Z reliable?

The price and inventory of 2N5089_J18Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5089_J18Z is usually 5 days.

3.What payment methods are accepted for 2N5089_J18Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5089_J18Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5089_J18Z?

2N5089_J18Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5089_J18Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5089_J18Z?

For technical support, including 2N5089_J18Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5089_J18Z requirements.

6.How does Aetrix verify that 2N5089_J18Z is sourced from the original manufacturer or authorized distributors?

All 2N5089_J18Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5089_J18Z meets industry standards.

7.What is the process for return or replacement of 2N5089_J18Z?

All 2N5089_J18Z units undergo pre-shipment inspection (PSI). If there is an issue with 2N5089_J18Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5089_J18Z part is unused and in its original packaging.

Return procedure for 2N5089_J18Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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