Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi 2N5089RLRA

Part No.:
2N5089RLRA
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-226-3, TO-92-3 Long Body, Formed Leads
Datasheet:
Aetrix2N5089RLRA.pdf
Description:
TRANS NPN 25V 0.05A TO92
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,864

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2N5089RLRA from onsemi is an NPN silicon small-signal amplifier transistor in TO-92 package, rated for VCEO = 25 V, IC = 50 mA, and hFE = 400–1200 (at IC = 1.0–10 mA), optimized for low-noise audio preamplifier stages in consumer and industrial electronics.

For engineers reviewing the 2N5089RLRA datasheet, pinout, applications, or equivalent options, key selection criteria include its 2.0 dB noise figure at 1 kHz, fT = 50 MHz, VCE(sat) ≤ 0.5 V, and Pb-free TO-92 packaging suitable for high-fidelity analog signal conditioning.

Technical Context

This discrete NPN bipolar junction transistor operates in linear amplification mode with base-emitter forward bias and collector-emitter voltage swing limited to 25 V. Its design emphasizes low-noise performance (NF = 2.0 dB) and high current gain across 100 µA–10 mA collector currents.

The device exhibits fT = 50 MHz at IC = 500 µA and VCE = 5 V, with Ccb = 4.0 pF and Ceb = 10 pF, enabling stable operation up to mid-VHF frequencies while maintaining predictable hfe response (450–1800) across 1–100 kHz signal bands.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO25 Vdc - Maximum safe collector-emitter voltage before breakdown in common-emitter configuration.
IC (continuous)50 mAdc - Continuous collector current rating defining linear operating headroom for Class-A amplifiers.
hFE range400–1200 - DC current gain variation across 1.0–10 mA IC, supporting consistent biasing in low-current gain-stable circuits.
NF2.0 dB @ 1 kHz - Low-noise figure enabling high-SNR preamplification of weak audio or sensor signals.
fT50 MHz - Unity-gain bandwidth confirming suitability for wideband analog signal amplification up to ~5 MHz usable bandwidth.
PD @ TA = 25°C625 mW - Power dissipation limit defining thermal derating requirements for PCB layout and heatsinking.
RJA200 °C/W - Junction-to-ambient thermal resistance indicating need for adequate copper area or airflow in ambient >40°C environments.

Pinout & Package

2N5089RLRA uses the standard TO-92 (Case 29-11) plastic package with 3 leads, lead-free plating, and JEDEC-compliant mechanical dimensions (A = 4.45–5.20 mm, B = 4.32–5.33 mm, C = 3.18–4.19 mm).

Pin/TerminalCircuit RoleDesign Meaning
1EmitterCurrent sink terminal; connected to ground or bias network in common-emitter amplifier configurations.
2BaseControl input; requires ~0.7 V forward bias and microampere-level drive current for linear amplification.
3CollectorCurrent source output; supplies amplified signal to load resistor or next stage with VCE(sat) ≤ 0.5 V under 10 mA drive.

Key Features

FeatureDesign Value
Low-noise operationNF = 2.0 dB at 1 kHz enables high-fidelity amplification of microphone or piezoelectric sensor outputs without added signal degradation.
High DC current gainhFE ≥ 400 at IC = 1.0 mA supports stable biasing with minimal base current, reducing loading on preceding stages.
Pb-free TO-92 packagingRoHS-compliant construction meets modern environmental regulations and eliminates lead-based solder compatibility concerns.
Wide fT bandwidth50 MHz fT ensures flat small-signal gain response through audio and sub-MHz instrumentation frequency ranges.

Applications

Audio Preamp StageInstrumentation Signal Conditioning

Use Scenario: Amplifying low-level signals from electret condenser microphones in voice recorders or intercom systems.

IC Role / Device Role / Timing Role: Discrete NPN amplifier providing 20–40 dB voltage gain with minimal added noise in first-stage signal chain.

Use Value: 2.0 dB NF and hFE ≥ 400 ensure clean signal capture without requiring complex feedback networks or external noise filtering.

Use Scenario: Boosting millivolt-level outputs from thermocouples or strain gauges in industrial monitoring equipment.

IC Role / Device Role / Timing Role: Linear transconductance amplifier converting sensor current into stable voltage output with high input impedance.

Use Value: Low VBE(on) (≤ 0.8 V) and tight hFE distribution enable accurate, temperature-stable gain calibration across production units.

RF Detector BiasingLow-Power Oscillator Core

Use Scenario: Providing active bias current to Schottky diode RF detectors in AM/FM receiver front-ends.

IC Role / Device Role / Timing Role: Constant-current source delivering precise 100–500 µA to detector diodes via emitter-follower configuration.

Use Value: Stable hFE and low Ceb (10 pF) prevent detuning of LC tank circuits while maintaining detector sensitivity.

Use Scenario: Serving as the active element in Colpitts or Hartley oscillator designs for local clock generation in embedded sensors.

IC Role / Device Role / Timing Role: Gain block sustaining oscillation at 1–10 MHz with predictable phase margin and startup reliability.

Use Value: 50 MHz fT and low Ccb (4.0 pF) support stable oscillation without excessive external compensation components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal amplifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
2N5088RLRAVCEO = 30 V (vs. 25 V), hFE min = 300 at IC = 10 mA, NF = 3.0 dB (vs. 2.0 dB)Higher voltage headroom but higher noise; less optimal for ultra-low-noise preampsSelect when circuit requires >25 V collector swing and noise performance is secondary
BC548CVCEO = 30 V, hFE = 420–800, NF = 4.0 dB, TO-92 package, non-Pb-free defaultLower gain consistency and higher noise; wider hFE spread increases production calibration effortChoose only if legacy inventory or cost constraints override noise and gain stability requirements

Compared with 2N5089RLRA, the 2N5088RLRA offers higher voltage tolerance but sacrifices noise performance, while the BC548C trades off both noise figure and hFE consistency for broader availability-making 2N5089RLRA the preferred choice for precision low-noise analog gain where VCEO ≤ 25 V suffices.

Availability

2N5089RLRA is available at Aetrix Electronics and suitable for audio preamplifiers, instrumentation signal chains, RF detector biasing, and low-power oscillator circuits requiring stable component supply and RoHS-compliant packaging.

Supply support for 2N5089RLRA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power management, analog, and sensing solutions for automotive, industrial, and cloud infrastructure markets.

The 2N5089RLRA belongs to onsemi's legacy NPN amplifier transistor family designed specifically for high-fidelity, low-noise analog signal amplification in cost-sensitive consumer and industrial electronics.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5089RLRA?

The 2N5089RLRA has a maximum collector-emitter voltage (VCEO) rating of 25 Vdc, verified per onsemi's official datasheet revision 3 (March 2006). This rating applies under standard test conditions (IC = 1.0 mAdc, IB = 0) and defines the absolute upper limit for safe operation in common-emitter amplifier configurations. Exceeding this voltage risks avalanche breakdown and permanent device damage.

Does the 2N5089RLRA have Pb-free construction?

Yes, the 2N5089RLRA features Pb-free construction, confirmed by its "RLRA" suffix and explicit marking in onsemi's ordering information table. The "R" denotes tape-and-reel packaging, "L" indicates Pb-free finish, and "A" specifies assembly location. This complies with RoHS Directive 2011/65/EU and eliminates lead-based solder compatibility concerns in modern SMT assembly processes.

What is the typical noise figure of the 2N5089RLRA and under what conditions is it measured?

The 2N5089RLRA has a typical noise figure (NF) of 2.0 dB, measured at IC = 100 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, and f = 1.0 kHz, as specified in the official onsemi datasheet. This value reflects its optimized low-noise performance for small-signal amplification, making the 2N5089RLRA particularly suitable for microphone preamplifiers and sensor interface circuits where signal integrity is critical.

What is the current-gain bandwidth product (fT) of the 2N5089RLRA?

The 2N5089RLRA has a minimum current-gain bandwidth product (fT) of 50 MHz, tested at IC = 500 µAdc, VCE = 5.0 Vdc, and f = 20 MHz. This parameter confirms the device's capability to maintain useful gain well into the VHF range, supporting stable amplification of signals up to approximately 5 MHz in practical common-emitter configurations with appropriate biasing and layout.

How is the pinout arranged on the 2N5089RLRA in TO-92 package?

When viewing the 2N5089RLRA's TO-92 package with the flat side facing outward and leads pointing downward, the pinout is: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector - matching the official marking diagram in onsemi's datasheet. This standardized arrangement ensures correct orientation during PCB layout and manual soldering, and is consistent across all 2N508x series devices in Case 29-11 packaging.

2N5089RLRA Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
NPN
Current - Collector (Ic) (Max):
50 mA
Voltage - Collector Emitter Breakdown (Max):
25 V
Vce Saturation (Max) @ Ib, Ic:
500mV @ 1mA, 10mA
Current - Collector Cutoff (Max):
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
400 @ 100µA, 5V
Power - Max:
625 mW
Frequency - Transition:
50MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92 (TO-226)

2N5089RLRA FAQ

1.How can I place an order for 2N5089RLRA through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5089RLRA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5089RLRA reliable?

The price and inventory of 2N5089RLRA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5089RLRA is usually 5 days.

3.What payment methods are accepted for 2N5089RLRA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5089RLRA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5089RLRA?

2N5089RLRA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5089RLRA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5089RLRA?

For technical support, including 2N5089RLRA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5089RLRA requirements.

6.How does Aetrix verify that 2N5089RLRA is sourced from the original manufacturer or authorized distributors?

All 2N5089RLRA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5089RLRA meets industry standards.

7.What is the process for return or replacement of 2N5089RLRA?

All 2N5089RLRA units undergo pre-shipment inspection (PSI). If there is an issue with 2N5089RLRA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5089RLRA part is unused and in its original packaging.

Return procedure for 2N5089RLRA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2N5089RLRA Tags

  • 2N5089RLRA
  • 2N5089RLRA PDF
  • 2N5089RLRA Datasheet
  • 2N5089RLRA Specifications
  • 2N5089RLRA Images
  • onsemi
  • onsemi 2N5089RLRA
  • Buy 2N5089RLRA
  • 2N5089RLRA Price
  • 2N5089RLRA Distributor
  • 2N5089RLRA Supplier
  • 2N5089RLRA Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER