onsemi 2N5089TA

Overview

2N5089TA from ON Semiconductor is a low-noise, high-gain NPN general-purpose amplifier optimized for audio preamplification and signal conditioning at collector currents from 1 µA to 50 mA. It features V_CEO = 25 V, h_FE = 400–1200 (at I_C = 10 mA), f_T = 50 MHz, NF = 2.0 dB (at I_C = 100 µA), and TO-92 package with C-B-E pinout.

For engineers reviewing the 2N5089TA datasheet, pinout, applications, or equivalent options, key selection criteria include low-noise performance in sub-mA biasing, DC current gain stability across temperature, saturation voltage under switching conditions, and thermal derating behavior in through-hole PCB layouts.

Technical Context

This device operates as a single NPN bipolar junction transistor with fixed emitter-base and collector-base junction geometries optimized for low-noise analog amplification. Its h_FE exhibits strong dependence on I_C and temperature - ranging from 300 at 100 µA to 1200 at 10 mA - and maintains usable gain up to 125 °C junction temperature.

The 2N5089TA's noise figure reaches 2.0 dB at 100 µA/10 Hz–15.7 kHz with R_S = 10 kΩ, and its f_T remains stable above 45 MHz across V_CE = 5 V and I_C = 500 µA–10 mA. Saturation behavior is characterized by V_CE(sat) ≤ 0.5 V at I_C/I_B = 10, supporting linear Class-A and switching Class-B operation.

Key Specifications

Pinout & Package

2N5089TA is housed in a standard TO-92 plastic package with axial leads and molded epoxy body. The case outline conforms to JEDEC TO-92 variant A (flat side facing viewer, leads down), with lead spacing of 0.3 inch (7.62 mm) and overall dimensions 4.6 × 3.3 × 4.0 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Compared with 2N5089TA, 2N5088TA offers higher voltage tolerance but sacrifices low-noise performance, while MMBT5089 delivers identical gain and noise in a smaller footprint at the cost of 44% lower power dissipation and higher thermal resistance.

Availability

2N5089TA is available at Aetrix Electronics and suitable for audio preamplification, instrumentation signal conditioning, and low-power switching interfaces requiring stable component supply across industrial, consumer, and test equipment programs.

Supply support for 2N5089TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N5089TA belongs to ON Semiconductor's legacy general-purpose bipolar transistor product line, designed for reliable, low-cost amplification and switching in cost-sensitive analog circuits where discrete transistor performance meets system requirements.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5089TA?

The 2N5089TA has a V_CEO rating of 25 V at T_A = 25 °C. This is the maximum voltage that can be applied between collector and emitter with the base open before breakdown occurs. Exceeding this value risks permanent device failure, especially under transient conditions or elevated temperatures.

Does the 2N5089TA have a specified noise figure, and under what conditions is it measured?

Yes, the 2N5089TA has a typical noise figure of 2.0 dB, measured at I_C = 100 µA, V_CE = 5.0 V, R_S = 10 kΩ, and over a bandwidth of 10 Hz to 15.7 kHz. This value reflects its suitability for ultra-low-current, high-impedance analog front-ends where minimizing added noise is critical.

Can the 2N5089TA be used as a direct replacement for the 2N5088TA in existing designs?

The 2N5089TA and 2N5088TA share identical TO-92 packaging and pinout, but differ in absolute maximum ratings and electrical characteristics: 2N5089TA has lower V_CEO (25 V vs. 30 V) and lower noise (2.0 dB vs. 3.0 dB). Substitution is viable only if the circuit operates below 25 V and benefits from improved noise performance.

What is the thermal resistance junction-to-ambient (R_θJA) for the 2N5089TA, and how does it affect PCB layout?

The 2N5089TA has an R_θJA of 200 °C/W when mounted on a standard FR-4 PCB with no additional copper area. To maintain T_J < 125 °C at 300 mW dissipation, at least 1 cm² of 2-oz copper connected to the emitter pad is recommended. Layouts without thermal relief will exceed safe junction temperature rapidly.

Is the 2N5089TA suitable for use in automotive applications?

The 2N5089TA is rated for operation from −55 °C to +150 °C junction temperature and complies with AEC-Q101 stress testing requirements per ON Semiconductor's qualification documentation. While not AEC-Q101 certified out-of-box, its robust thermal and electrical specifications support under-hood use in non-safety-critical subsystems such as cabin sensors and lighting controls.