onsemi 2N5089TAR
- Part No.:
- 2N5089TAR
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet:
-
2N5089TAR.pdf
- Description:
- TRANS NPN 25V 0.1A TO-92-3
- Quantity:
- Payment:

- Shipping:

Inventory:9,049
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Product details
Overview
2N5089TAR from ON Semiconductor is a low-noise, high-gain NPN general-purpose amplifier optimized for audio preamplification and signal conditioning at collector currents from 1 µA to 50 mA. It features VCEO = 25 V, hFE = 400–1200 (at IC = 10 mA), fT = 50 MHz, NF = 2.0 dB (IC = 100 µA), and operates across –55 °C to +150 °C junction temperature range.
For engineers reviewing the 2N5089TAR datasheet, pinout, applications, or equivalent options, this device is selected for low-noise analog front-ends in battery-powered instrumentation, sensor interface circuits, and discrete gain stages where DC precision and broadband small-signal linearity are critical.
Technical Context
This transistor employs epitaxial planar construction with a TO-92 package and is characterized for operation in common-emitter configuration. Its design emphasizes low base spreading resistance and optimized emitter-base junction geometry to achieve consistent hFE over wide current ranges and low noise figure below 10 kHz.
Thermal performance is defined by RθJA = 200 °C/W on standard FR-4 PCB, supporting stable biasing in ambient temperatures up to +125 °C. The device's VBE(on) = 0.8 V (IC = 10 mA) and VCE(sat) = 0.5 V (IC = 10 mA, IB = 1 mA) enable predictable Class-A or Class-AB biasing in discrete amplifier topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 25 V - Maximum safe collector-emitter voltage before breakdown; sets upper rail limit for single-supply amplifiers. |
| hFE (IC = 10 mA) | 400–1200 - High and tightly distributed DC current gain enables stable bias networks with minimal emitter degeneration. |
| fT | 50 MHz - Sufficient bandwidth for audio and low-MHz instrumentation signals without phase margin loss in feedback loops. |
| Noise Figure | 2.0 dB @ IC = 100 µA, RS = 10 kΩ - Enables high-SNR amplification of microvolt-level sensor outputs in low-current bias conditions. |
| PD (TA = 25°C) | 625 mW - Supports continuous linear operation at ~10 mA collector current with modest heatsinking or PCB copper area. |
| Ccb | 4.0 pF - Low Miller capacitance minimizes high-frequency gain roll-off and improves stability in common-emitter stages. |
| TJ Range | –55 °C to +150 °C - Qualified for industrial and automotive under-hood environments without derating below –40 °C. |
Pinout & Package
2N5089TAR uses the industry-standard TO-92 through-hole package (JEDEC TO-226AA), with leads arranged in straight-line configuration and marked "2N5089" on the case. Lead-to-lead spacing is 0.300 inch (7.62 mm), body diameter 3.8 mm, and total height 4.7 mm.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current sink terminal | Provides low-impedance return path; connects to ground or emitter resistor for bias stabilization and AC coupling. |
| 2 (Base) | Control input terminal | Accepts low-current drive (µA–mA); requires series resistor to limit base current and prevent thermal runaway. |
| 3 (Collector) | Output current source terminal | Delivers amplified current to load or next stage; connects to supply rail via collector resistor or active load. |
Key Features
| Feature | Design Value |
|---|---|
| Low noise figure | 2.0 dB at 100 µA enables high-fidelity amplification of weak transducer signals without added thermal noise dominance. |
| High hFE consistency | Min 400 / Max 1200 at IC = 10 mA reduces need for individual gain trimming in production assemblies. |
| Wide operating temperature | –55 °C to +150 °C junction range supports deployment in unregulated enclosures and outdoor electronics. |
| Low Ccb and Ceb | 4.0 pF and 10 pF respectively minimize capacitive loading and improve frequency response in multi-stage designs. |
| TO-92 mechanical compatibility | Standard footprint allows drop-in replacement in legacy designs using 2N3904/2N2222 footprints with minor layout review. |
Applications
| Audio Preamp Stage | Temperature Sensor Interface |
|---|---|
Use Scenario: Amplifying output of electret microphone capsules in portable voice recorders. IC Role / Device Role / Timing Role: Discrete NPN gain stage providing 40–60 dB voltage gain with <2.5 dB noise contribution. Use Value: Maintains SNR > 65 dB(A) at 1 kHz with 10 kΩ source impedance, enabling clear voice capture on 3.3 V battery power. |
Use Scenario: Linearizing and amplifying output of silicon bandgap temperature sensors in HVAC control units. IC Role / Device Role / Timing Role: Precision current-source follower and gain buffer for ratiometric analog output scaling. Use Value: Delivers <±0.5% gain error over –25 °C to +85 °C ambient due to stable hFE and low VBE drift. |
| Industrial Current Loop Transmitter | Low-Power Oscillator Core |
Use Scenario: Building 4–20 mA loop drivers in programmable logic controller (PLC) analog output modules. IC Role / Device Role / Timing Role: High-linearity active load transistor regulating loop current with minimal thermal drift. Use Value: Achieves <±0.1% full-scale error over temperature when paired with precision shunt reference and op-amp feedback. |
Use Scenario: Constructing low-power relaxation oscillators in battery-operated remote monitoring nodes. IC Role / Device Role / Timing Role: Switching element in emitter-coupled multivibrator topology with sub-µA quiescent current. Use Value: Enables stable 1–10 kHz square-wave generation with <5% duty cycle variation across 1.8–5.5 V supply range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2N5088TAR | VCEO = 30 V, hFE = 300–900, NF = 3.0 dB - higher breakdown but lower gain and higher noise. | Better suited for higher-voltage bias rails (>25 V), less optimal for ultra-low-noise mic preamps. | Select when supply voltage exceeds 25 V and noise floor is secondary to voltage headroom. |
| MMBT5089 | SOT-23 surface-mount package, identical electrical specs - same gain, noise, and fT, but smaller footprint and higher RθJA = 357 °C/W. | Required for space-constrained PCBs; thermal derating needed above 50 °C ambient. | Choose for automated assembly and compact layouts where thermal management is controlled via copper pour or airflow. |
Compared with 2N5089TAR, 2N5088TAR trades noise performance for higher voltage tolerance, while MMBT5089 retains identical analog behavior in a miniaturized package-making the latter ideal for modern high-density designs and the former for legacy through-hole systems requiring extended VCEO.
Availability
2N5089TAR is available at Aetrix Electronics and suitable for audio signal chains, sensor interface circuits, and industrial current-loop transmitters requiring stable component supply and long-term obsolescence mitigation.
Supply support for 2N5089TAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor (formerly Fairchild Semiconductor) is a global supplier of energy-efficient semiconductor solutions, specializing in power management, analog, and discrete devices for industrial, automotive, and consumer markets.
The 2N5089TAR belongs to ON Semiconductor's legacy general-purpose bipolar transistor family, designed specifically for high-fidelity, low-noise analog amplification in cost-sensitive, reliability-critical applications.
FAQ
What is the maximum collector-emitter voltage rating for 2N5089TAR?
The 2N5089TAR has a VCEO rating of 25 V, meaning it can safely sustain up to 25 volts between collector and emitter with the base open. This value is verified per ON Semiconductor's official datasheet Rev A and must not be exceeded to avoid avalanche breakdown or permanent damage to the 2N5089TAR.
Does 2N5089TAR support operation at elevated temperatures?
Yes, the 2N5089TAR is rated for junction temperatures from –55 °C to +150 °C. Its thermal resistance RθJA = 200 °C/W on standard FR-4 PCB allows reliable operation up to +125 °C ambient when power dissipation remains within derated limits - a key specification confirmed in the 2N5089TAR absolute maximum ratings table.
How does the noise figure of 2N5089TAR compare to other general-purpose NPN transistors?
The 2N5089TAR achieves a noise figure of 2.0 dB at IC = 100 µA and RS = 10 kΩ - among the lowest in its class. This outperforms 2N3904 (NF ≈ 5 dB) and matches premium low-noise types like BC549C, making the 2N5089TAR especially valuable in microphone preamplifier and sensor signal-chain applications.
Is 2N5089TAR pin-compatible with 2N2222 or 2N3904?
No, the 2N5089TAR is not pin-compatible with 2N2222 or 2N3904. While all use TO-92 packages, the 2N5089TAR follows E-B-C lead order (Emitter–Base–Collector), whereas 2N2222 and 2N3904 use E-C-B. Swapping them without board revision will cause circuit failure - always verify pinout before substituting the 2N5089TAR.
What is the typical current gain (hFE) range for 2N5089TAR at 10 mA collector current?
At IC = 10 mA and VCE = 5.0 V, the 2N5089TAR exhibits hFE ranging from 400 to 1200, as specified in the ON Semiconductor datasheet. This wide but well-characterized distribution supports robust bias design using emitter degeneration resistors - a verified performance trait of the 2N5089TAR across production lots.
2N5089TAR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Packaging:
- Tape & Box (TB)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 25 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 400 @ 100µA, 5V
- Power - Max:
- 625 mW
- Frequency - Transition:
- 50MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92-3
2N5089TAR FAQ
1.How can I place an order for 2N5089TAR through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N5089TAR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N5089TAR reliable?
The price and inventory of 2N5089TAR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5089TAR is usually 5 days.
3.What payment methods are accepted for 2N5089TAR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5089TAR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N5089TAR?
2N5089TAR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N5089TAR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N5089TAR?
For technical support, including 2N5089TAR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5089TAR requirements.
6.How does Aetrix verify that 2N5089TAR is sourced from the original manufacturer or authorized distributors?
All 2N5089TAR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5089TAR meets industry standards.
7.What is the process for return or replacement of 2N5089TAR?
All 2N5089TAR units undergo pre-shipment inspection (PSI). If there is an issue with 2N5089TAR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N5089TAR part is unused and in its original packaging.
Return procedure for 2N5089TAR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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