onsemi 2N5089TF

Overview

2N5089TF from ON Semiconductor is a low-noise, high-gain NPN general-purpose amplifier transistor designed for signal amplification at collector currents from 1 µA to 50 mA. It features V_CEO = 25 V, V_CBO = 30 V, h_FE = 400–1200 (at I_C = 10 mA), f_T = 50 MHz, and NF = 2.0 dB (at I_C = 100 µA), making it suitable for audio preamplifiers and sensor interface stages.

For engineers reviewing the 2N5089TF datasheet, pinout, applications, or equivalent options, key selection criteria include low-noise performance at microamp bias, wide h_FE range across operating current, TO-92 mechanical compatibility, thermal resistance (R_θJA = 200 °C/W), and guaranteed V_(BR)CEO margin for 24 V rail designs.

Technical Context

The 2N5089TF operates as a single NPN bipolar junction transistor optimized for linear amplification rather than switching. Its design emphasizes low base-emitter leakage (I_EBO ≤ 100 nA at V_EB = 4.5 V) and stable small-signal gain (h_fe = 450 at 1 mA, rising to 1800 at 100 µA), enabling precision DC-coupled gain stages.

It supports operation across –55°C to +150°C junction temperature, with pulsed-current gain validated up to 100 mA and noise figure characterized from 10 Hz to 15.7 kHz - confirming suitability for instrumentation-grade analog front-ends where 1/f noise and thermal drift are critical.

Key Specifications

Pinout & Package

2N5089TF is housed in a through-hole TO-92 package (JEDEC TO-226AA), with leads arranged in straight-line configuration: Emitter (left), Base (center), Collector (right) when viewing the flat side with leads downward.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Compared with 2N5088TF and MMBT5089, the 2N5089TF delivers the optimal balance of low-noise performance, high gain at low bias, and robust through-hole manufacturability - making it preferred for prototyping, repair, and medium-volume industrial analog modules where thermal headroom and manual assembly are priorities.

Availability

2N5089TF is available at Aetrix Electronics and suitable for audio preamplifiers, temperature sensor interfaces, and DC-coupled instrumentation amplifiers requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for 2N5089TF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, medical, and IoT applications.

The 2N5089TF belongs to ON Semiconductor's legacy general-purpose bipolar transistor product line, originally developed by Fairchild Semiconductor to deliver high-fidelity, low-noise amplification for analog signal chains in cost-sensitive, high-reliability systems.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5089TF?

The 2N5089TF has a maximum collector-emitter voltage (V_CEO) rating of 25 V at T_A = 25°C. This rating is defined under DC conditions with I_B = 0, and must be derated linearly above 25°C ambient per the device's thermal characteristics. Exceeding this voltage risks avalanche breakdown and permanent degradation of the 2N5089TF's gain and leakage performance.

Does the 2N5089TF support operation at elevated temperatures?

Yes, the 2N5089TF is rated for junction temperatures from –55°C to +150°C. Its electrical parameters - including h_FE, V_BE(on), and NF - are characterized across this full range, with typical gain decreasing by ~0.5%/°C above 25°C. The 2N5089TF maintains functional integrity in automotive under-dash and industrial motor-control environments when mounted on standard FR-4 with adequate copper area.

How does the noise figure of the 2N5089TF compare at different collector currents?

The 2N5089TF achieves its lowest noise figure of 2.0 dB at I_C = 100 µA, RS = 10 kΩ, and 10 Hz–15.7 kHz bandwidth. At I_C = 1 mA, NF rises to ~3.5 dB; at I_C = 10 mA, it exceeds 5 dB. This confirms the 2N5089TF's optimization for micropower, low-noise applications - not high-current amplification - and validates its use in battery-powered sensor nodes where sub-100 µA bias is feasible.

Is the 2N5089TF pin-compatible with other TO-92 NPN transistors like the 2N3904?

No, the 2N5089TF is not pin-compatible with the 2N3904. While both use TO-92 packages, the 2N5089TF follows the E-B-C lead order (Emitter–Base–Collector), whereas the 2N3904 uses E-C-B. Swapping them without board revision will result in incorrect biasing and circuit failure. Always verify pinout using the official ON Semiconductor datasheet for the 2N5089TF before layout or replacement.

Can the 2N5089TF be used in switching applications?

The 2N5089TF is characterized and optimized for linear amplification, not switching. Its specified V_CE(sat) = 0.5 V at I_C = 10 mA / I_B = 1 mA reflects modest saturation performance, and its f_T = 50 MHz does not guarantee fast turn-off. For switching, ON Semiconductor recommends dedicated devices like the NSS12201LT1G. Using the 2N5089TF as a switch may cause excessive power dissipation and unreliable state transitions.