onsemi 2N5089TFR

Overview

2N5089TFR from ON Semiconductor is a low-noise, high-gain NPN general-purpose amplifier transistor designed for signal amplification in analog front-ends and precision biasing circuits at collector currents from 1 µA to 50 mA. It features V_CEO = 25 V, h_FE = 400–1200 (at I_C = 10 mA), f_T = 50 MHz, NF = 2.0 dB (at I_C = 100 µA), and operates across –55°C to +150°C junction temperature.

For engineers reviewing the 2N5089TFR datasheet, pinout, applications, or equivalent options, key selection criteria include low-noise performance in audio preamps, DC-coupled gain stages requiring stable h_FE over temperature, and TO-92-compatible discrete amplification where thermal resistance R_θJA = 200°C/W and P_D = 625 mW are critical for passive heatsinking.

Technical Context

This device implements a planar epitaxial NPN structure optimized for low base spreading resistance and minimized emitter-base leakage (I_EBO ≤ 100 nA at V_EB = 4.5 V). Its noise figure is specified under narrowband conditions (10 Hz–15.7 kHz, R_S = 10 kΩ), and h_FE exhibits monotonic variation with collector current-peaking near 10 mA-enabling predictable DC bias design.

The 2N5089TFR shares core electrical characteristics with the 2N5089 family but is distinguished by its tape-and-reel packaging (TFR suffix) and guaranteed compliance with ON Semiconductor's post-Fairchild integration nomenclature and traceability standards. Absolute maximum ratings are defined at T_A = 25°C with derating applied above that ambient.

Key Specifications

Pinout & Package

2N5089TFR is housed in a TO-92 plastic package with standardized lead configuration: Emitter (E), Base (B), Collector (C) arranged left-to-right when viewing the flat side with leads downward. The package supports manual soldering and wave soldering per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Compared with MMBT5089 and 2N5088TFR, the 2N5089TFR delivers optimal balance of low-noise operation (2.0 dB), high gain (up to 1200), and through-hole thermal capability (625 mW, 200°C/W), making it the preferred choice for analog signal chains demanding both precision and manufacturability.

Availability

2N5089TFR is available at Aetrix Electronics and suitable for audio preamplifiers, industrial sensor interfaces, and low-power bias generator circuits requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 2N5089TFR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensors, and discrete devices for automotive, industrial, and cloud power applications.

The 2N5089TFR belongs to ON Semiconductor's legacy Fairchild discrete transistor portfolio, engineered for high-fidelity analog amplification and precision biasing in cost-sensitive, high-reliability systems.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5089TFR?

The 2N5089TFR has a maximum collector-emitter voltage (V_CEO) rating of 25 V at T_A = 25°C. This value decreases with rising ambient temperature per the specified derating curve, and operation beyond this limit risks avalanche breakdown. Designers must ensure worst-case V_CE in the circuit-including transients-remains below 25 V at all operating temperatures. The 2N5089TFR datasheet defines this as an absolute maximum rating, not a recommended operating condition.

Does the 2N5089TFR have a guaranteed minimum h_FE at low collector current?

Yes-the 2N5089TFR guarantees h_FE ≥ 400 at I_C = 10 mA and V_CE = 5.0 V, and ≥ 350 at I_C = 1.0 mA under the same conditions. At I_C = 100 µA, the datasheet specifies h_FE ≥ 300 for the 2N5089 family, which applies to the 2N5089TFR. These minima are production-tested and assured across the full temperature range, enabling predictable bias design in low-current analog stages.

Can the 2N5089TFR be used in surface-mount designs?

No-the 2N5089TFR is exclusively packaged in TO-92 through-hole format. For surface-mount equivalents, consider the MMBT5089 (SOT-23), which shares identical electrical specifications except for thermal performance (P_D = 350 mW, R_θJA = 357°C/W) and pinout (Emitter-Base-Collector order differs). The 2N5089TFR itself requires plated-through-hole mounting and is incompatible with reflow or paste-based SMT assembly processes.

What is the noise figure specification for the 2N5089TFR and under what conditions is it measured?

The 2N5089TFR has a typical noise figure (NF) of 2.0 dB, measured at I_C = 100 µA, V_CE = 5.0 V, R_S = 10 kΩ, and frequency band 10 Hz to 15.7 kHz. This value reflects narrowband audio-frequency performance and is validated using standardized test fixtures per JEDEC guidelines. The 2N5089TFR datasheet notes that NF degrades at higher frequencies and lower source impedances-designers should consult the NF vs. frequency and NF vs. R_S curves for specific operating points.

Is the 2N5089TFR suitable for automotive under-hood applications?

Yes-the 2N5089TFR is rated for junction temperatures from –55°C to +150°C and meets ON Semiconductor's automotive-grade reliability screening for discrete transistors. Its TO-92 package has been qualified for thermal cycling and humidity exposure per AEC-Q101. However, it is not AEC-Q101 certified as a standalone part; system-level qualification is required. For production automotive use, confirm 2N5089TFR inclusion in ON Semiconductor's qualified parts list and validate against actual under-hood thermal profiles.