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STMicroelectronics 2N5154S1

Part No.:
2N5154S1
Manufacturer:
STMicroelectronics
Category:
Single Bipolar Transistors
Package:
TO-276AA
Datasheet:
Aetrix2N5154S1.pdf
Description:
TRANS NPN 80V 5A SMD5
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6

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Product details

Overview

2N5154S1 from STMicroelectronics is a radiation-hardened NPN bipolar junction transistor qualified to ESCC 5203/010 for space-grade operation, featuring VCEO = 80 V, IC(max) = 5 A, hFE ≥ 70 at 5 V / 2.5 A, and operation from –65 °C to +200 °C in hermetic SMD.5 packaging with emitter on pin 1 - used in satellite power supplies and radiation-tolerant linear bias circuits.

For engineers reviewing the 2N5154S1 datasheet, 2N5154S1 pinout, 2N5154S1 application, or 2N5154S1 equivalent, this page delivers verified radiation hardness data (100 krad(Si) LDR), thermal resistance (Rthj-case = 5 °C/W), TO-257/SMD.5 package mapping, and ESCC flight-model traceability requirements.

Technical Context

This device is a high-reliability, low-dose-rate radiation-hardened NPN transistor designed for continuous operation under total ionizing dose (TID) exposure up to 100 krad(Si). Its hermetic SMD.5 package isolates the lid from all terminals and positions emitter on pin 1 per ESCC 5203/010/06 compliance.

Electrical behavior is characterized across –65 °C to +200 °C, with guaranteed VCE(sat) ≤ 1.5 V at IC = 5 A / IB = 0.5 A and hFE ≥ 40 at 5 A / 5 V - enabling stable gain and saturation performance in hardened linear regulators and battery-switching stages.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 80 V - maximum collector-emitter voltage before breakdown under zero base current; defines safe operating voltage in DC-DC converter switches.
IC(max) 5 A - continuous collector current rating; supports high-current linear bias and battery isolation circuits without derating at Tcase ≤ 25 °C.
hFE ≥70 at IC = 2.5 A, VCE = 5 V - ensures predictable current amplification in feedback-controlled power stages under nominal conditions.
Rthj-case 5 °C/W - junction-to-case thermal resistance; enables direct heatsink mounting for 35 W dissipation capability in compact SMD.5 layout.
TOP –65 °C to +200 °C - extended operating temperature range; validated for cryogenic launch and high-temperature orbital environments.
Radiation Tolerance 100 krad(Si) low-dose-rate - qualified per ESCC 5203/010 with post-irradiation hFE ≥ 35 at 2.5 A / 5 V; suitable for long-duration LEO/GEO missions.

Pinout & Package

SMD.5 hermetic surface-mount package: 3-terminal ceramic-metal sealed housing with gold-plated leads; lid electrically isolated from all pins; weight = 1 g; footprint compatible with automated placement.

Pin/Terminal Circuit Role Design Meaning
1 Emitter Primary current sink node; connected to ground or low-side reference in switching and linear regulator topologies.
2 Base Control input for current amplification; requires precise drive current (e.g., 0.5 A for 5 A collector output) to ensure saturation.
3 Collector High-current output node; tied to input supply rail in high-side switch configurations or load return in low-side arrangements.

Key Features

Feature Design Value
ESCC 5203/010 qualification Fully compliant flight-grade screening including lot-level radiation verification at 0.1 rad(Si)/s up to 100 krad.
Hermetic SMD.5 packaging Sealed ceramic-metal construction prevents moisture ingress and outgassing; meets NASA/ESA outgassing limits for vacuum environments.
Low-dose-rate (LDR) hardness Validated immunity to enhanced low-dose-rate damage mechanisms critical for geosynchronous orbit applications.
High-temperature junction operation Rated for continuous operation at TJ = 200 °C - eliminates need for external thermal derating in compact power modules.

Applications

Spacecraft Power Distribution Satellite Battery Switching

Use Scenario: High-reliability DC bus switching in LEO satellite power management units.

IC Role / Device Role / Timing Role: NPN transistor configured as a hard-switched series pass element controlling main battery discharge path.

Use Value: Radiation tolerance ensures uninterrupted power routing after 100 krad(Si) exposure; Rthj-case = 5 °C/W allows direct heatsink coupling in constrained volume.

Use Scenario: Redundant battery isolation during launch and orbital insertion phases.

IC Role / Device Role / Timing Role: Linear-mode current limiter protecting battery cells from overcurrent during fault transients.

Use Value: Guaranteed hFE ≥ 40 at 5 A enables precise current regulation without gain collapse under radiation stress.

Rad-Hard Linear Bias Supply Harsh-Environment Motor Driver Stage

Use Scenario: Precision bias current source for radiation-hardened op-amps and comparators in payload electronics.

IC Role / Device Role / Timing Role: Constant-current sink maintaining stable reference voltage across temperature extremes.

Use Value: Stable hFE > 70 at –55 °C to +125 °C ensures consistent bias current across mission thermal profile.

Use Scenario: Low-duty-cycle gate driver pre-stage in reaction wheel motor control modules.

IC Role / Device Role / Timing Role: Fast-switching NPN buffer amplifying PWM signals to MOSFET gate drivers.

Use Value: ton = 0.5 µs / toff = 1.3 µs enables clean 100 kHz switching with minimal shoot-through risk in radiation-burdened systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar radiation-hardened NPN transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
2N5154RSHRG Identical SMD.5 package and ESCC 5203/010/06R qualification, but rated for 100 krad(Si) LDR with full radiation test report included. Required where ESA or NASA mission mandates documented post-radiation electrical validation at 100 krad. Select when flight certification requires traceable radiation verification data beyond baseline ESCC qualification.
2N5154SHRG Same SMD.5 footprint and ESCC 5203/010/06 qualification, but not radiation-tested to 100 krad; engineering model status only. Suitable for ground-test hardware and non-flight prototypes where radiation margin is not required. Choose for cost-sensitive development boards or qualification test fixtures where full radiation testing is unnecessary.

Compared with 2N5154S1, 2N5154RSHRG adds verified 100 krad LDR performance with full RVT reporting, while 2N5154SHRG offers identical form-fit-function without radiation assurance - enabling tiered selection across prototype, qualification, and flight hardware.

Availability

2N5154S1 is available at Aetrix Electronics and suitable for spacecraft power distribution, satellite battery switching, and rad-hard linear bias supply designs requiring stable component supply with full ESCC documentation and traceable sourcing.

Supply support for 2N5154S1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering automotive, industrial, and aerospace-grade ICs with emphasis on reliability, radiation tolerance, and long-term product continuity.

The 2N5154HR family is part of ST's space-grade bipolar transistor product line, engineered specifically for ESCC-qualified applications demanding immunity to total ionizing dose and operation across extreme thermal environments.

FAQ

What is the pin configuration for 2N5154S1?

2N5154S1 uses the SMD.5 hermetic package with emitter on pin 1, base on pin 2, and collector on pin 3. The lid is electrically isolated from all terminals. This pinout is defined in ESCC 5203/010/06 and confirmed in Table 6 of DS6100 Rev 14.

Is 2N5154S1 qualified for low-dose-rate radiation environments?

No - 2N5154S1 is an engineering model (EM) with ESCC 5203/010 qualification but no documented low-dose-rate radiation testing. For LDR compliance, select 2N5154RSHRG or 2N5154RESYHRG, both tested to 100 krad(Si) at 0.1 rad(Si)/s per ESCC 22900.

What thermal interface is recommended for 2N5154S1 in SMD.5 package?

A thermally conductive adhesive or solder-based interface directly to a copper heatsink is recommended. With Rthj-case = 5 °C/W, the device supports 35 W dissipation at Tcase = 25 °C; avoid thermal vias through solder mask - use exposed copper pad with minimum 10 mm² area beneath the package base.

Does 2N5154S1 include radiation test reports in its shipment documentation?

No - as an engineering model, 2N5154S1 ships with a Certificate of Conformance per Table 8 of DS6100, but no Radiation Verification Test (RVT) report. Flight models like 2N5154RSHRG include RVT data at 25/50/70/100 krad for full ESCC compliance traceability.

2N5154S1 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
TO-276AA
Packaging:
Strip
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
5 A
Voltage - Collector Emitter Breakdown (Max):
80 V
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 500mA, 5A
Current - Collector Cutoff (Max):
1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 2.5A, 5V
Power - Max:
35 W
Frequency - Transition:
-
Operating Temperature:
200°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SMD5

2N5154S1 FAQ

1.How can I place an order for 2N5154S1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5154S1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5154S1 reliable?

The price and inventory of 2N5154S1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5154S1 is usually 5 days.

3.What payment methods are accepted for 2N5154S1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5154S1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5154S1?

2N5154S1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5154S1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5154S1?

For technical support, including 2N5154S1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5154S1 requirements.

6.How does Aetrix verify that 2N5154S1 is sourced from the original manufacturer or authorized distributors?

All 2N5154S1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5154S1 meets industry standards.

7.What is the process for return or replacement of 2N5154S1?

All 2N5154S1 units undergo pre-shipment inspection (PSI). If there is an issue with 2N5154S1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5154S1 part is unused and in its original packaging.

Return procedure for 2N5154S1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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