onsemi 2N5172_D27Z

Overview

2N5172_D27Z from Good-Ark Semiconductor is an NPN general-purpose bipolar junction transistor in TO-92 package, rated for 30 V V_CEO, 500 mW P_C, and 500 mA I_C peak (0.5 A continuous), with h_FE spanning 70–400 at V_CE = 1 V and I_C = 100 mA, used in low-power switching and linear amplification circuits such as signal buffering and relay drivers.

For engineers reviewing the 2N5172_D27Z datasheet, pinout, applications, or equivalent options, key selection factors include verified V_CEO/V_CBO ratings, h_FE binning consistency (Rank O/Y/GR), saturation voltage under defined I_B/I_C conditions, thermal resistance (250 °C/W), and TO-92 mechanical compatibility with legacy through-hole layouts.

Technical Context

The 2N5172_D27Z operates as a medium-speed, low-voltage NPN switch or amplifier with f_T = 300 MHz at V_CE = 6 V and I_C = 20 mA, supporting audio-frequency and low-MHz digital signal handling. Its Cob = 7 pF at V_CB = 6 V enables stable operation in RC-coupled stages without excessive Miller effect.

It features two h_FE test conditions: h_FE(1) = 70–400 at V_CE = 1 V, I_C = 100 mA (for small-signal gain), and h_FE(2) ≥ 25 at V_CE = 6 V, I_C = 400 mA (for high-current switching linearity), with V_CE(sat) ≤ 0.25 V at I_C = 100 mA / I_B = 10 mA confirming low-loss on-state performance.

Key Specifications

Pinout & Package

2N5172_D27Z is housed in a standard TO-92 plastic package with 3 leads, designed for through-hole mounting and manual or wave soldering. Dimensions comply with JEDEC TO-92 outline (A = 3.3–3.7 mm, D = 4.3–4.7 mm, L = 14.1–14.5 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN transistor applications.

Compared with 2N5172_D27Z, the 2N2222A offers greater voltage safety margin but reduced high-frequency gain stability, while the BC547B matches f_T and h_FE range but lacks the 0.5 A continuous current capability-making 2N5172_D27Z optimal for medium-power switching where both current and speed matter.

Availability

2N5172_D27Z is available at Aetrix Electronics and suitable for audio preamplifiers, relay interface circuits, DC motor drivers, and LED current regulators requiring stable component supply and consistent h_FE binning across production batches.

Supply support for 2N5172_D27Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Good-Ark Semiconductor is a Taiwan-based manufacturer specializing in discrete semiconductors, including transistors, diodes, and MOSFETs, with ISO 9001-certified production and AEC-Q101 qualified devices for industrial and automotive use.

The 2N5172_D27Z belongs to Good-Ark's general-purpose bipolar transistor product line, engineered for cost-effective, reliable performance in consumer, industrial, and embedded control applications demanding robust parametric consistency and TO-92 form-factor compatibility.

FAQ

What is the maximum continuous collector current rating for the 2N5172_D27Z?

The 2N5172_D27Z has a maximum continuous collector current (I_C) rating of 0.5 A at T_A = 25 °C. This rating decreases with rising ambient temperature per its thermal resistance (R_θJA = 250 °C/W); for example, at 75 °C ambient, the usable I_C drops to approximately 0.3 A to maintain safe junction temperature. Always verify derated current against actual board layout and airflow in the 2N5172_D27Z application.

Does the 2N5172_D27Z have a specified transition frequency (f_T)?

Yes, the 2N5172_D27Z has a typical transition frequency (f_T) of 300 MHz, measured at V_CE = 6 V and I_C = 20 mA. This value confirms suitability for RF preamplification and high-speed switching up to ~100 MHz. The 2N5172_D27Z f_T remains stable across its h_FE bin ranks (O/Y/GR), making it reliable for broadband analog designs where gain-bandwidth trade-offs matter.

What are the h_FE bin rankings for the 2N5172_D27Z and how are they marked?

The 2N5172_D27Z is binned into three h_FE groups: Rank O (70–140), Rank Y (120–240), and Rank GR (200–400), all tested at V_CE = 1 V and I_C = 100 mA. These bins are laser-marked on the TO-92 package body (e.g., "O", "Y", or "GR"). The 2N5172_D27Z marking "D27Z" indicates a specific date/batch code-not h_FE rank-so h_FE bin must be confirmed via test data or packaging label.

Can the 2N5172_D27Z replace the 2N2222 in existing designs?

The 2N5172_D27Z can serve as a functional alternative to the 2N2222 in many low-to-medium power applications, but it is not a direct pin-compatible drop-in replacement due to differences in h_FE distribution and saturation behavior. While both use TO-92 packages and share similar V_CEO/P_C ratings, the 2N5172_D27Z offers higher f_T and wider h_FE range. Verify base drive and thermal margins before substituting the 2N5172_D27Z in legacy 2N2222 circuits.

What is the thermal resistance (R_θJA) of the 2N5172_D27Z and how does it affect PCB layout?

The 2N5172_D27Z has a junction-to-ambient thermal resistance (R_θJA) of 250 °C/W in free-air conditions. This means a 200 mW power dissipation causes a ~50 °C junction rise above ambient. To manage heat, use adequate copper pour on the collector pad, avoid enclosing the TO-92 in sealed enclosures, and ensure airflow. The 2N5172_D27Z thermal performance is sensitive to PCB copper area-doubling pad size may reduce R_θJA by ~20–30 °C/W.