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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N5194G

Name: 2N5194G
Brand: onsemi
SKU: 2N5194G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N5194G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-225AA, TO-126-3

Datasheet:: 2N5194G.pdf

Description:: TRANS PNP 60V 4A TO-126

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2N5194G from onsemi is a silicon PNP power transistor designed for high-current switching and linear amplifier applications, with V_CEO = 60 V, I_C = 4.0 A, P_D = 40 W at T_C = 25°C, and R_JC = 3.12°C/W - used in industrial motor controls, DC-DC converter output stages, and audio power amplifiers.

For engineers reviewing the 2N5194G datasheet, pinout, applications, or equivalent options, key selection criteria include safe operating area (SOA) compliance at elevated case temperatures, h_FE stability across –65°C to +150°C, and Pb-free TO-225 mechanical compatibility in high-power discrete layouts.

Technical Context

This device operates as a medium-power PNP bipolar junction transistor with complementary pairing to NPN 2N5191/2N5192. Its design emphasizes ruggedness in switching duty cycles ≤2.0% and linear operation up to 150°C junction temperature, supported by secondary breakdown-limited SOA curves and normalized transient thermal resistance data.

Electrical behavior is characterized under pulsed conditions (pulse width ≤300 µs), with guaranteed h_FE ≥25 at I_C = 1.5 A/V_CE = 2.0 V and V_CE(sat) ≤0.6 V at I_C = 1.5 A/I_B = 0.15 A - enabling reliable saturation in hard-switched power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	60 Vdc - maximum collector-emitter voltage before avalanche in open-base configuration; defines upper rail limit in switching topologies.
I_C	4.0 Adc - continuous collector current rating at T_C = 25°C; derates linearly above 25°C per 320 mW/°C slope.
P_D	40 W - total device dissipation at T_C = 25°C; requires heatsinking to maintain T_J ≤150°C in sustained operation.
h_FE	25–100 - DC current gain range at I_C = 1.5 A/V_CE = 2.0 V; supports stable biasing in Class AB audio output stages.
V_CE(sat)	≤0.6 V - collector-emitter saturation voltage at I_C = 1.5 A/I_B = 0.15 A; minimizes conduction loss in saturated-switch applications.
f_T	2.0 MHz - current-gain bandwidth product at I_C = 1.0 A/V_CE = 10 V/f = 1.0 MHz; suitable for audio-frequency amplification but not RF.

Pinout & Package

2N5194G is housed in a Pb-free TO-225 package (Case 77-09, Style 1), featuring a metal tab electrically connected to the collector and optimized for mechanical mounting to heatsinks. The package provides 3.12°C/W junction-to-case thermal resistance and accommodates 500-unit bulk shipping.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Main current exit path; tied to most negative potential in PNP switch configurations.
2, 4	Collector	Common collector terminal (pins 2 and 4 internally bonded); connected to heatsink tab for thermal and electrical grounding.
3	Base	Control input for minority-carrier injection; requires current-limiting resistor to prevent overdrive.

Key Features

Feature	Design Value
Complementary Pairing	Matched to NPN 2N5191/2N5192 for push-pull amplifier designs requiring symmetrical gain and thermal tracking.
Rugged SOA	Guaranteed active-region safe operating area up to 5 ms pulses at 150°C, supporting overload tolerance in motor drive protection circuits.
Pb-Free Construction	RoHS-compliant TO-225 package meeting JEDEC J-STD-020 reflow profiles without lead contamination risk.
High-Temperature Operation	Rated for continuous operation from –65°C to +150°C junction temperature, validated via thermal coefficient plots for V_BE and V_CE(sat).

Applications

Industrial Motor Control	Audio Power Amplifier
Use Scenario: Driving brushed DC motors in factory automation systems with PWM frequencies below 20 kHz and peak currents up to 4 A. IC Role / Device Role / Timing Role: PNP power switch in high-side configuration, delivering controlled current to motor windings during active low periods of complementary NPN stage. Use Value: Low V_CE(sat) (≤0.6 V) reduces conduction losses; robust SOA prevents second-breakdown failure during stall events.	Use Scenario: Output stage in 20 W Class AB audio amplifier for public address systems operating from ±35 V rails. IC Role / Device Role / Timing Role: Complementary PNP emitter-follower output transistor paired with 2N5191, providing low-impedance drive to 4–8 Ω loudspeakers. Use Value: h_FE ≥25 at 1.5 A ensures stable quiescent current setting; wide T_J range maintains bias stability across ambient temperatures.
DC-DC Converter Switch	Power Supply Regulator
Use Scenario: High-side switch in non-isolated buck converter delivering 3.3 V/3 A from 12 V input in telecom power modules. IC Role / Device Role / Timing Role: Saturated PNP switch operating at 250 kHz with <2% duty cycle, controlled by base driver IC. Use Value: Verified turn-on/off times (t_r, t_f) support efficient switching; thermal resistance enables compact heatsink integration.	Use Scenario: Series pass element in adjustable linear regulator supplying 5 V/2 A to FPGA core logic with tight ripple requirements. IC Role / Device Role / Timing Role: Linear-mode PNP pass transistor dissipating up to 20 W under worst-case dropout conditions. Use Value: Guaranteed h_FE minimum ensures predictable current gain for feedback loop stability; SOA curve validates safe operation during load transients.

Industrial Motor Control

Audio Power Amplifier

Use Scenario: Driving brushed DC motors in factory automation systems with PWM frequencies below 20 kHz and peak currents up to 4 A.

IC Role / Device Role / Timing Role: PNP power switch in high-side configuration, delivering controlled current to motor windings during active low periods of complementary NPN stage.

Use Value: Low V_CE(sat) (≤0.6 V) reduces conduction losses; robust SOA prevents second-breakdown failure during stall events.

Use Scenario: Output stage in 20 W Class AB audio amplifier for public address systems operating from ±35 V rails.

IC Role / Device Role / Timing Role: Complementary PNP emitter-follower output transistor paired with 2N5191, providing low-impedance drive to 4–8 Ω loudspeakers.

Use Value: h_FE ≥25 at 1.5 A ensures stable quiescent current setting; wide T_J range maintains bias stability across ambient temperatures.

DC-DC Converter Switch

Power Supply Regulator

Use Scenario: High-side switch in non-isolated buck converter delivering 3.3 V/3 A from 12 V input in telecom power modules.

IC Role / Device Role / Timing Role: Saturated PNP switch operating at 250 kHz with <2% duty cycle, controlled by base driver IC.

Use Value: Verified turn-on/off times (t_r, t_f) support efficient switching; thermal resistance enables compact heatsink integration.

Use Scenario: Series pass element in adjustable linear regulator supplying 5 V/2 A to FPGA core logic with tight ripple requirements.

IC Role / Device Role / Timing Role: Linear-mode PNP pass transistor dissipating up to 20 W under worst-case dropout conditions.

Use Value: Guaranteed h_FE minimum ensures predictable current gain for feedback loop stability; SOA curve validates safe operation during load transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD2955G	V_CEO = 60 V, I_C = 12 A, P_D = 75 W, TO-263 package; higher current but larger footprint and different pinout.	Supports higher continuous current in surface-mount designs; unsuitable for through-hole TO-225 board replacements.	Select when board redesign allows SMT layout and >4 A peak current is required.
2N6292	V_CEO = 80 V, I_C = 10 A, P_D = 115 W, TO-3 package; higher voltage/current ratings but requires larger heatsink and different mounting.	Used in higher-voltage industrial supplies where 80 V V_CEO margin is critical; incompatible with TO-225 mechanical constraints.	Select when system requires >60 V blocking capability and TO-3 mechanical integration is acceptable.

Compared with MJD2955G and 2N6292, the 2N5194G offers optimal balance of 60 V/4 A capability, TO-225 through-hole compatibility, and proven thermal performance in legacy industrial PCBs - making it preferred for drop-in replacement in existing designs constrained by footprint and heatsink interface.

Availability

2N5194G is available at Aetrix Electronics and suitable for industrial motor control, audio power amplification, DC-DC converter switching, and linear regulator applications requiring stable component supply and long-term manufacturing continuity.

Supply support for 2N5194G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT markets.

The 2N5194G belongs to onsemi's legacy silicon bipolar power transistor family, engineered for ruggedness in high-current linear and switching applications where reliability under thermal stress and electrical overload is critical.

FAQ

What is the maximum junction temperature rating for the 2N5194G?

The 2N5194G is rated for an operating junction temperature range of –65°C to +150°C. This specification is validated by thermal coefficient plots in the official datasheet and confirmed by SOA curves referenced to T_J = 150°C. Derating of power dissipation must begin above T_C = 25°C using the 320 mW/°C slope to ensure T_J remains within limits during continuous operation.

Is the 2N5194G pin-compatible with the 2N5195G?

No, the 2N5194G is not pin-compatible with the 2N5195G in terms of electrical ratings, though both share the same TO-225 package and pinout. The 2N5195G has higher V_CEO (80 V) and V_CB (80 V) ratings but lower h_FE min (20 vs. 25) and identical thermal resistance. Substitution requires verification of voltage margin and gain requirements in the target circuit.

Does the 2N5194G require a base resistor in switching applications?

Yes, the 2N5194G requires an external base current-limiting resistor to ensure I_B does not exceed 1.0 Adc maximum. For saturation at I_C = 4.0 A, a typical design uses I_B = 0.4–0.5 A (h_FE ≥10), requiring precise resistor selection based on driver voltage and thermal stability - as confirmed by V_BE(on) = 1.2 V max at I_C = 1.5 A.

What is the safe operating area (SOA) limitation for the 2N5194G at 100°C case temperature?

At T_C = 100°C, the 2N5194G's SOA is thermally limited to approximately 12 A at V_CE = 10 V and 3 A at V_CE = 40 V, per Figure 11's derated thermal limit curve. Secondary breakdown remains the dominant constraint below 100 µs pulse widths, while bond wire limits govern beyond 10 ms - all verified in the published SOA graph referenced to T_J(pk) = 150°C.

Can the 2N5194G be used in parallel configurations for higher current handling?

Parallel operation of 2N5194G devices is not recommended without individual emitter resistors and matched h_FE sorting, due to positive thermal feedback inherent in bipolar transistors. The datasheet provides no derating guidance or matching specifications for paralleling, and thermal resistance variation between units may cause current imbalance - making discrete current-sharing networks essential for reliability.

2N5194G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-225AA, TO-126-3

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 4 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 1.4V @ 1A, 4A

Current - Collector Cutoff (Max):: 1mA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 25 @ 1.5A, 2V

Power - Max:: 40 W

Frequency - Transition:: 2MHz

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-126

2N5194G FAQ

1.How can I place an order for 2N5194G through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5194G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5194G reliable?

The price and inventory of 2N5194G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5194G is usually 5 days.

3.What payment methods are accepted for 2N5194G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5194G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5194G?

2N5194G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5194G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5194G?

For technical support, including 2N5194G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5194G requirements.

6.How does Aetrix verify that 2N5194G is sourced from the original manufacturer or authorized distributors?

All 2N5194G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5194G meets industry standards.

7.What is the process for return or replacement of 2N5194G?

All 2N5194G units undergo pre-shipment inspection (PSI). If there is an issue with 2N5194G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5194G part is unused and in its original packaging.

Return procedure for 2N5194G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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