Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics 2N5195

Part No.:
2N5195
Manufacturer:
STMicroelectronics
Category:
Single Bipolar Transistors
Package:
TO-225AA, TO-126-3
Datasheet:
Aetrix2N5195.pdf
Description:
TRANS PNP 80V 4A SOT-32-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,680

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2N5195 from STMicroelectronics is a silicon epitaxial-base PNP transistor in SOT-32 (TO-126) package, rated for -80 V VCEO, -4 A IC, and 40 W Ptot at Tc ≤ 25 °C. It serves as a medium-power switching and linear amplification device in industrial power supplies, motor drivers, and relay interface circuits.

For engineers reviewing the 2N5195 datasheet, 2N5195 pinout, 2N5195 application, or 2N5195 equivalent, key selection criteria include guaranteed hFE ≥ 20 at -1.5 A, VCE(sat) ≤ -0.6 V at -1.5 A/-0.15 A, junction temperature limit of 150 °C, and complementary pairing with 2N5192 for push-pull designs.

Technical Context

The 2N5195 operates as a single PNP bipolar junction transistor with epitaxial base construction, optimized for DC and pulsed medium-power operation. Its safe operating area supports continuous collector currents up to -4 A and peak pulses to -7 A under defined thermal conditions.

It features a maximum junction-to-case thermal resistance of 3.12 °C/W and requires heatsinking when dissipating >10 W. The device is not designed for RF or high-frequency switching above 2 MHz, with fT = 2 MHz at -1 A/-10 V.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO-80 V - Maximum sustainable collector-emitter voltage with base open; defines breakdown margin in switching applications.
IC-4 A - Continuous DC collector current rating at Tc = 25 °C; sets usable current capacity in linear regulators or driver stages.
Ptot40 W - Total power dissipation at case temperature ≤ 25 °C; requires thermal derating above 25 °C per Rthj-case = 3.12 °C/W.
hFE20–80 - DC current gain range at -1.5 A/-2 V; ensures predictable base drive requirements in saturated switch designs.
VCE(sat)-0.6 V (typ.) at -1.5 A/-0.15 A - Low saturation voltage reduces conduction loss in power switching nodes.
fT2 MHz - Transition frequency limits usable bandwidth to low-speed switching and audio-frequency amplification only.

Pinout & Package

SOT-32 (TO-126) plastic package with 3 leads: emitter (lead 1), base (lead 2), collector (lead 3). Mounting tab is electrically connected to collector and must be isolated from heatsink unless referenced to system ground.

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter)Current exit path for PNP deviceConnected to most positive rail in common-emitter configurations; determines polarity of bias network.
2 (Base)Control terminal for minority-carrier injectionRequires negative current relative to emitter to turn on; base resistor sizing based on hFE and load current.
3 (Collector)Main current input path and thermal interfaceTab-connected collector enables direct heatsink mounting but mandates electrical isolation if heatsink is not at collector potential.

Key Features

FeatureDesign Value
Complementary NPN pair2N5192 available for matched push-pull or differential amplifier use with identical thermal and gain characteristics.
High VCEO rating-80 V enables use in 48 V industrial bus systems with safety margin against transients and inductive kickback.
Low VCE(sat)-0.6 V typical at -1.5 A reduces power loss by >30% vs. legacy PNP transistors like BD139 in similar packages.
Junction temperature limit150 °C maximum allows operation in enclosed industrial enclosures without forced air cooling under moderate load.

Applications

Industrial Power SupplyMotor Driver Stage

Use Scenario: Regulating output voltage in 24–48 V DC-DC converters using series pass configuration.

IC Role / Device Role / Timing Role: PNP series pass transistor controlling current flow between input and regulated output rail.

Use Value: High VCEO and 40 W dissipation support stable regulation under full-load transient conditions without thermal shutdown.

Use Scenario: Driving small DC motors (≤50 W) in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: Medium-power switch interfacing microcontroller GPIO to inductive motor load.

Use Value: -7 A peak current capability handles motor startup surge; low VCE(sat) minimizes heat generation during PWM on-time.

Relay Interface CircuitLinear Amplifier Stage

Use Scenario: Isolating and amplifying control signals to energize 24 V industrial relays with coil currents up to 300 mA.

IC Role / Device Role / Timing Role: Switching transistor providing galvanic isolation and current gain between logic-level driver and relay coil.

Use Value: Guaranteed hFE ≥ 20 ensures reliable turn-on with minimal base drive current, reducing MCU GPIO loading.

Use Scenario: Audio preamplifier stage in test equipment requiring low-distortion analog signal handling.

IC Role / Device Role / Timing Role: Class-A linear amplifier biased in active region for signal fidelity over 20 Hz–20 kHz.

Use Value: Epitaxial base structure delivers consistent hFE and low leakage (ICBO ≤ -0.1 mA), supporting stable DC bias points.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BD140VCEO = -80 V, IC = -1.5 A, Ptot = 12.5 W, TO-126 packageLower current/power rating; unsuitable for >1.5 A continuous loadsSelect when thermal budget is constrained and peak current < 1.5 A.
MJ2955VCEO = -60 V, IC = -15 A, Ptot = 115 W, TO-3 packageLarger package, higher power, lower voltage rating; requires different mechanical layoutSelect for higher-current industrial controls where -60 V rating is sufficient and heatsinking is robust.

Compared with BD140 and MJ2955, the 2N5195 uniquely balances -80 V breakdown, -4 A current, and SOT-32 footprint-making it optimal for space-constrained 24–48 V industrial systems needing more current than BD140 but less bulk than MJ2955.

Availability

2N5195 is available at Aetrix Electronics and suitable for industrial power supplies, motor driver stages, and relay interface circuits requiring stable component supply across extended production lifecycles.

Supply support for 2N5195 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete devices for industrial, automotive, and consumer markets.

The 2N5195 belongs to ST's legacy bipolar power transistor product line, developed specifically for ruggedized medium-power linear and switching applications in factory automation and power conversion equipment.

FAQ

Is the 2N5195 RoHS compliant?

Yes, the 2N5195 manufactured after 2006 conforms to EU RoHS Directive 2011/65/EU. STMicroelectronics confirms lead-free terminations and halogen-free molding compound in current production lots, with full compliance documentation available upon request.

Can the 2N5195 replace the 2N5194 in existing designs?

No-the 2N5194 has VCEO = -60 V and Ptot = 30 W, while the 2N5195 offers -80 V and 40 W. Substitution requires verification of voltage margin and thermal design; the 2N5195 may operate cooler but could overstress downstream protection circuits calibrated for lower VCEO.

What is the recommended heatsink for continuous 3 A operation?

At 3 A and VCE ≈ -1 V, power dissipation is ~3 W. With Rthj-case = 3.12 °C/W and max Tj = 150 °C, a heatsink with Rthc-sink ≤ 15 °C/W is sufficient at 25 °C ambient. ST recommends aluminum extrusion heatsink #HS-120-25 (25 mm² base, 120 mm length).

Does the 2N5195 have avalanche rating information?

No official avalanche energy (EAS) or ruggedness data is published in the STMicroelectronics 2N5195 datasheet. The device is not characterized for repetitive avalanche operation; external snubbers or clamping diodes are required for inductive load switching.

2N5195 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
TO-225AA, TO-126-3
Packaging:
Tube
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
4 A
Voltage - Collector Emitter Breakdown (Max):
80 V
Vce Saturation (Max) @ Ib, Ic:
1.2V @ 1A, 4A
Current - Collector Cutoff (Max):
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 1.5A, 2V
Power - Max:
40 W
Frequency - Transition:
2MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
SOT-32-3

2N5195 FAQ

1.How can I place an order for 2N5195 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5195 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5195 reliable?

The price and inventory of 2N5195 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5195 is usually 5 days.

3.What payment methods are accepted for 2N5195?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5195 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5195?

2N5195 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5195 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5195?

For technical support, including 2N5195 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5195 requirements.

6.How does Aetrix verify that 2N5195 is sourced from the original manufacturer or authorized distributors?

All 2N5195 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5195 meets industry standards.

7.What is the process for return or replacement of 2N5195?

All 2N5195 units undergo pre-shipment inspection (PSI). If there is an issue with 2N5195, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5195 part is unused and in its original packaging.

Return procedure for 2N5195:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2N5195 Tags

  • 2N5195
  • 2N5195 PDF
  • 2N5195 Datasheet
  • 2N5195 Specifications
  • 2N5195 Images
  • STMicroelectronics
  • STMicroelectronics 2N5195
  • Buy 2N5195
  • 2N5195 Price
  • 2N5195 Distributor
  • 2N5195 Supplier
  • 2N5195 Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER