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onsemi 2N5210_D81Z
- Part No.:
- 2N5210_D81Z
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet:
-
2N5210_D81Z.pdf
- Description:
- TRANS NPN 50V 0.1A TO-92-3
- Quantity:
- Payment:
- Shipping:
Inventory:8,666
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Product details
Overview
2N5210_D81Z from Fairchild Semiconductor is an NPN general-purpose amplifier transistor optimized for low-noise, high-gain signal amplification at collector currents from 1 µA to 50 mA. It features VCEO = 50 V, hFE = 250–600 (at IC = 1–10 mA), fT = 30 MHz, NF = 2.0–3.0 dB (1–15.7 kHz), and Ccb = 4.0 pF - enabling use in audio preamplifiers, sensor interface stages, and low-level analog front-ends.
For engineers reviewing the 2N5210_D81Z datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, TO-92 package mapping, thermal derating guidance, noise performance curves, and validated alternative transistors for low-noise amplifier design.
Technical Context
The 2N5210_D81Z operates as a silicon NPN bipolar junction transistor with common-emitter configuration. Its design emphasizes low-noise operation (NF ≤ 3.0 dB at 1 kHz with RS = 10 kΩ) and stable high current gain across IC = 100 µA–10 mA, supported by fT = 30 MHz and low Ccb = 4.0 pF.
Thermal management is defined by RθJA = 200 °C/W (TO-92) and 625 mW total dissipation at TA = 25°C, derating linearly at 5.0 mW/°C above ambient. Junction temperature must remain within −55°C to +150°C per absolute maximum ratings.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum safe collector-emitter voltage before breakdown; defines headroom for low-voltage amplifier rails. |
| hFE (IC = 1 mA) | 250–600 - High DC current gain enables high-input-impedance, low-bias-current amplifier stages. |
| fT | 30 MHz - Bandwidth limit for small-signal amplification; supports audio and sub-MHz instrumentation signals. |
| NF (1 kHz, RS = 10 kΩ) | 2.0–3.0 dB - Low noise figure critical for microphone preamps and precision sensor signal conditioning. |
| Ccb | 4.0 pF - Low collector-base capacitance minimizes Miller effect and improves high-frequency stability. |
| PD (TA = 25°C) | 625 mW - Power handling capability in TO-92 package; requires heatsinking or derating above 25°C ambient. |
| IC (max) | 100 mA - Continuous collector current rating; supports moderate drive capability without saturation distortion. |
Pinout & Package
2N5210_D81Z is packaged in TO-92 - a through-hole, three-lead plastic case with standard lead spacing (0.1" pitch) and axial orientation. Pin identification follows JEDEC TO-92 outline: Lead 1 = Emitter, Lead 2 = Base, Lead 3 = Collector.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 (E) | Emitter | Current output terminal; connects to ground or emitter resistor for bias stabilization and AC signal reference. |
| Lead 2 (B) | Base | Control input; accepts base current to modulate collector current; requires proper bias network for linear operation. |
| Lead 3 (C) | Collector | High-impedance output node; delivers amplified current to load or next stage; sensitive to capacitive loading. |
Key Features
| Feature | Design Value |
|---|---|
| Low-noise amplification | NF = 2.0 dB at 1 kHz with 10 kΩ source resistance - enables clean signal recovery in mic/audio/sensor front-ends. |
| High DC current gain | hFE ≥ 250 at IC = 1 mA - reduces required base drive and improves input impedance in CE configurations. |
| Stable gain over temperature | hFE variation < ±20% from −40°C to +125°C - maintains consistent amplification in industrial environments. |
| Low collector-base capacitance | Ccb = 4.0 pF - limits Miller multiplication and preserves bandwidth in high-gain amplifier designs. |
| Wide operating temperature range | −55°C to +150°C junction range - supports deployment in automotive under-hood and industrial control applications. |
Applications
| Audio Preamplifier Stage | Temperature Sensor Interface |
|---|---|
|
Use Scenario: Amplifying weak output from electret condenser microphones or piezoelectric sensors in portable audio devices. IC Role / Device Role / Timing Role: NPN small-signal amplifier in common-emitter configuration with emitter degeneration for linearity. Use Value: 2.0 dB noise figure and 250+ hFE enable >60 dB SNR at 1 kHz with minimal external components. |
Use Scenario: Linear amplification of low-level voltage outputs from thermistor or RTD bridge circuits. IC Role / Device Role / Timing Role: Transconductance amplifier converting resistance changes into stable voltage signals. Use Value: Stable hFE over −40°C to +125°C ensures consistent gain calibration across environmental conditions. |
| Industrial Analog Input Module | Low-Power Signal Conditioning |
|
Use Scenario: Buffering and gain-setting for 4–20 mA loop receivers or PLC analog input cards. IC Role / Device Role / Timing Role: High-input-impedance current-to-voltage converter stage with low thermal drift. Use Value: 50 V VCEO and 100 mA IC rating support robust operation in noisy industrial power domains. |
Use Scenario: Battery-powered sensor nodes requiring ultra-low quiescent current and minimal PCB area. IC Role / Device Role / Timing Role: Low-IC amplifier operating at 100 µA collector current for extended battery life. Use Value: Validated hFE ≥ 200 at IC = 100 µA enables functional amplification down to nanoampere bias levels. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT5210 | SOT-23 surface-mount variant; identical electrical specs but RθJA = 357 °C/W and PD = 350 mW - lower power handling than TO-92 2N5210_D81Z. | Used where board space is constrained and reflow assembly is preferred; not suitable for same thermal loads as TO-92 version. | Select MMBT5210 only when footprint and assembly method require SMT; verify thermal margin at target IC. |
| 2N3904 | Lower fT (300 MHz vs 30 MHz), higher VCEO (40 V), lower NF (5 dB typical), and narrower hFE range (100–300) - less optimized for low-noise, high-gain analog use. | Common in digital switching and general-purpose gain stages; lacks the 2N5210_D81Z's noise and gain consistency at low IC. | Choose 2N3904 only for cost-sensitive or non-critical analog roles; avoid where NF < 3 dB or hFE > 250 at 100 µA is required. |
Compared with MMBT5210 and 2N3904, the 2N5210_D81Z delivers superior low-noise performance and higher guaranteed hFE at microampere bias currents - making it the preferred choice for precision analog front-ends where signal integrity outweighs package size or cost constraints.
Availability
2N5210_D81Z is available at Aetrix Electronics and suitable for audio preamplifiers, industrial sensor interfaces, and analog input modules requiring stable component supply, long-lifecycle availability, and traceable sourcing.
Supply support for 2N5210_D81Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016. Its legacy products remain widely deployed in industrial and consumer systems.
The 2N5210_D81Z belongs to Fairchild's general-purpose NPN transistor family, designed specifically for low-noise, high-gain linear amplification in audio, instrumentation, and sensor signal conditioning applications.
FAQ
What is the maximum collector-emitter voltage rating for the 2N5210_D81Z?
The 2N5210_D81Z has a VCEO rating of 50 V, meaning it can safely sustain up to 50 volts between collector and emitter with base open. This rating is confirmed in the Absolute Maximum Ratings table and applies at TA = 25°C. Exceeding this voltage risks avalanche breakdown and permanent device damage. Always include safety margin - typically ≤ 80% of VCEO - in final designs using the 2N5210_D81Z.
Does the 2N5210_D81Z support low-noise operation at audio frequencies?
Yes, the 2N5210_D81Z is explicitly characterized for low-noise performance: NF = 2.0 dB at 1 kHz with RS = 10 kΩ and NF = 3.0 dB at 15.7 kHz with RS = 22 kΩ. These values are measured per standard JEDEC test conditions and make the 2N5210_D81Z suitable for electret microphone preamplifiers, phono stages, and other audio front-end circuits where signal fidelity is critical.
What is the DC current gain (hFE) range of the 2N5210_D81Z at 1 mA collector current?
The 2N5210_D81Z exhibits hFE = 250–600 when tested at IC = 1.0 mA and VCE = 5.0 V, per the Electrical Characteristics table. This wide gain spread reflects process variation but ensures minimum usable gain of 250 - sufficient for single-stage amplification without feedback in many analog designs using the 2N5210_D81Z.
Can the 2N5210_D81Z be used in surface-mount designs?
No - the 2N5210_D81Z is specified exclusively in the TO-92 through-hole package. For surface-mount compatibility, Fairchild offers the functionally equivalent MMBT5210 in SOT-23. While both share identical electrical characteristics, the MMBT5210 has lower power dissipation (350 mW) and higher thermal resistance (357 °C/W), so direct substitution requires thermal validation in the 2N5210_D81Z's intended application.
What is the thermal derating slope for the 2N5210_D81Z above 25°C ambient?
The 2N5210_D81Z derates at 5.0 mW/°C above TA = 25°C, based on its 625 mW maximum power dissipation and RθJA = 200 °C/W. For example, at 75°C ambient, allowable power drops to 625 mW − (50°C × 5.0 mW/°C) = 375 mW. This linear derating must be applied in thermal design calculations for any circuit using the 2N5210_D81Z.
2N5210_D81Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Vce Saturation (Max) @ Ib, Ic:
- 700mV @ 1mA, 10mA
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 100µA, 5V
- Power - Max:
- 625 mW
- Frequency - Transition:
- 30MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92-3
2N5210_D81Z FAQ
1.How can I place an order for 2N5210_D81Z through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N5210_D81Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N5210_D81Z reliable?
The price and inventory of 2N5210_D81Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5210_D81Z is usually 5 days.
3.What payment methods are accepted for 2N5210_D81Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5210_D81Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N5210_D81Z?
2N5210_D81Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N5210_D81Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N5210_D81Z?
For technical support, including 2N5210_D81Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5210_D81Z requirements.
6.How does Aetrix verify that 2N5210_D81Z is sourced from the original manufacturer or authorized distributors?
All 2N5210_D81Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5210_D81Z meets industry standards.
7.What is the process for return or replacement of 2N5210_D81Z?
All 2N5210_D81Z units undergo pre-shipment inspection (PSI). If there is an issue with 2N5210_D81Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N5210_D81Z part is unused and in its original packaging.
Return procedure for 2N5210_D81Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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