onsemi 2N5210_J05Z

Overview

2N5210_J05Z from Fairchild Semiconductor is an NPN general-purpose amplifier transistor optimized for low-noise, high-gain analog signal amplification at collector currents from 1 µA to 50 mA. It features V_CEO = 50 V, h_FE = 250–600 (at I_C = 1–10 mA), f_T = 30 MHz, NF = 2.0–3.0 dB (10 Hz–15.7 kHz), and C_cb = 4.0 pF - enabling use in audio preamplifiers, sensor interface stages, and low-level RF front-ends.

For engineers reviewing the 2N5210_J05Z datasheet, pinout, applications, or equivalent options, key selection considerations include its TO-92 package configuration, verified noise performance below 3 dB at 1 kHz with 10 kΩ source resistance, thermal resistance R_θJA = 200 °C/W, and guaranteed h_FE minimum of 200 at I_C = 100 µA.

Technical Context

This device operates as a discrete NPN bipolar junction transistor with fixed emitter-base and collector-base junction geometry optimized for linear amplification rather than switching. Its design emphasizes low base-emitter voltage drift over temperature (V_BE(on) = 0.85 V at I_C = 1 mA) and stable small-signal gain (h_fe = 250–900 at 1 kHz) across –40°C to +125°C ambient conditions.

The 2N5210_J05Z supports continuous DC operation up to T_J = 150°C with derated power dissipation above 25°C (5.0 mW/°C), and exhibits predictable saturation behavior (V_CE(sat) ≤ 0.7 V at I_C = 10 mA, I_B = 1 mA). Its 4.0 pF collector-base capacitance and 30 MHz f_T enable bandwidth-limited amplification in sub-10 MHz analog signal chains without oscillation risk under standard biasing.

Key Specifications

Pinout & Package

2N5210_J05Z is housed in a through-hole TO-92 package (JEDEC TO-92 variant) with standardized lead configuration: Emitter (E), Base (B), Collector (C) arranged left-to-right when viewing the flat side with leads downward. The package provides mechanical robustness and solderability compatible with wave and hand-solder processes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Compared with MMBT5210 and 2N3904, the 2N5210_J05Z delivers uniquely verified low-frequency noise performance (2.0 dB NF at 10 Hz–15.7 kHz) and guaranteed h_FE ≥200 down to 100 µA - making it the preferred choice for precision analog front-ends where signal integrity at microamp bias levels is non-negotiable.

Availability

2N5210_J05Z is available at Aetrix Electronics and suitable for audio preamplifiers, sensor signal conditioning circuits, photodiode interface designs, and low-frequency oscillator implementations requiring stable component supply and long-term manufacturability.

Supply support for 2N5210_J05Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor (now part of ON Semiconductor) is a legacy analog and discrete semiconductor manufacturer known for high-reliability bipolar transistors, MOSFETs, and optoelectronics with broad industrial and automotive qualification.

The 2N5210_J05Z belongs to Fairchild's legacy NPN general-purpose amplifier family, designed specifically for low-noise, high-linearity analog signal amplification in consumer audio, instrumentation, and sensor interface applications.

FAQ

What is the maximum operating temperature for the 2N5210_J05Z?

The 2N5210_J05Z has a specified operating junction temperature range of –55°C to +150°C. Its absolute maximum rating assumes thermal derating above 25°C ambient at 5.0 mW/°C for the TO-92 package. At 100 mW dissipation, junction temperature rise is ~20°C above ambient, allowing safe operation up to +130°C ambient if case-to-ambient thermal path is unobstructed.

Does the 2N5210_J05Z have a guaranteed minimum h_FE at low collector currents?

Yes, the 2N5210_J05Z guarantees h_FE ≥200 at I_C = 100 µA, V_CE = 5.0 V, and T_A = 25°C. This specification is explicitly listed in the "ON CHARACTERISTICS" table of the official Fairchild datasheet Rev B and is validated across production lots for low-bias analog stages.

Is the 2N5210_J05Z suitable for low-noise microphone preamplifier designs?

Yes, the 2N5210_J05Z is validated for low-noise audio applications: its noise figure is 2.0 dB at I_C = 20 µA, R_S = 22 kΩ, and 3.0 dB at I_C = 20 µA, R_S = 10 kΩ across 10 Hz–15.7 kHz. These values are measured and published in the "SMALL SIGNAL CHARACTERISTICS" section, confirming suitability for electret and MEMS microphone bias networks.

What is the collector-emitter saturation voltage (V_CE(sat)) for the 2N5210_J05Z under typical conditions?

The 2N5210_J05Z specifies V_CE(sat) ≤ 0.7 V at I_C = 10 mA and I_B = 1.0 mA, per the "ON CHARACTERISTICS" table. This value is measured under pulsed conditions (≤300 µs, ≤2% duty cycle) and remains stable across –40°C to +125°C junction temperature, supporting reliable switching in low-duty-cycle oscillator cores.

Can the 2N5210_J05Z be used in place of the 2N3904 in existing designs?

The 2N5210_J05Z is not a direct replacement for the 2N3904 due to differences in noise performance, guaranteed h_FE at low I_C, and thermal characteristics. While both are NPN TO-92 transistors, the 2N5210_J05Z offers superior low-frequency noise (2.0 dB vs. no spec) and higher minimum h_FE at 100 µA (200 vs. ~30), requiring circuit validation if substituted.