onsemi 2N5210RLRA

Overview

2N5210RLRA from ON Semiconductor (formerly Motorola) is an NPN silicon small-signal transistor in TO-92 package, rated for V_CEO = 50 V, I_C = 50 mA, and P_D = 625 mW at T_A = 25°C. It delivers h_FE = 150–250 at I_C = 1.0 mA and f_T = 30 MHz, with low noise figure (NF = 2.0 dB at I_C = 20 µA, R_S = 10 kΩ), making it suitable for audio preamplifier and RF front-end stages.

For engineers reviewing the 2N5210RLRA datasheet, pinout, applications, or equivalent options, this page provides verified DC gain ranges, thermal resistance (R_θJA = 200°C/W), noise performance, saturation voltage (V_CE(sat) ≤ 0.7 V), and TO-92 mechanical layout details - all confirmed from Motorola's official Device Data document.

Technical Context

The 2N5210RLRA operates as a general-purpose NPN bipolar junction transistor optimized for low-noise amplification and switching in linear and RF signal paths. Its h_FE variation across collector current (100–600 at I_C = 100 µA to 10 mA) and temperature-stable V_BE(on) ≤ 0.85 V support stable biasing in discrete amplifier designs.

With f_T = 30 MHz and C_cb ≤ 4.0 pF, it supports mid-band RF applications up to ~20 MHz; its low NF (2.0 dB) and high h_fe = 600–900 at 1 kHz enable high-gain, low-distortion audio preamp stages without requiring complex feedback networks.

Key Specifications

Pinout & Package

2N5210RLRA uses the TO-92 (Case 29–04, Style 1) plastic package with 3 leads. Lead spacing is 2.54 mm (0.100 inch), body dimensions are 4.45–5.20 mm × 4.32–5.33 mm × 3.18–4.19 mm (L×W×H), and weight is ~0.3 g. The device is supplied in radial tape on 365 mm reel (Style A/B/E/F per packaging spec).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal transistor applications.

Compared with 2N5210RLRA, the 2N5210RLRE offers identical performance with regional packaging compliance, while the MPS6518 trades 1.0 dB higher noise and 5 MHz lower bandwidth for broader h_FE range - making the 2N5210RLRA optimal for noise-critical, mid-frequency amplification where gain tolerance is secondary.

Availability

2N5210RLRA is available at Aetrix Electronics and suitable for audio preamplifier design, RF intermediate-frequency amplification, and low-power switching applications requiring stable component supply across industrial, medical, and communications equipment lifecycles.

Supply support for 2N5210RLRA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Motorola Semiconductor) is a global leader in high-performance silicon solutions for automotive, industrial, cloud computing, and IoT applications, with deep heritage in discrete transistor design.

The 2N5210RLRA belongs to Motorola's legacy "Small-Signal Transistors" product line, engineered specifically for low-noise, medium-frequency amplification and reliable switching in cost-sensitive, high-volume analog circuits.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5210RLRA?

The 2N5210RLRA has a maximum collector-emitter voltage (V_CEO) rating of 50 Vdc, tested at I_C = 1.0 mAdc with base open. This rating defines the absolute upper limit for voltage applied between collector and emitter in active or saturated operation - exceeding it risks avalanche breakdown and permanent device failure. Designers should maintain ≥20% derating margin (i.e., ≤40 V) in production circuits for long-term reliability.

Does the 2N5210RLRA support surface-mount assembly?

No, the 2N5210RLRA is packaged exclusively in the through-hole TO-92 (Case 29–04) plastic housing and is not offered in SMT variants like SOT-23. Its RLRA suffix denotes radial tape on 365 mm reel - designed for automatic axial insertion equipment, not pick-and-place machines. For SMT equivalents, consider the MMBT5210 (SOT-23) which shares identical electrical specs but requires different PCB footprint and reflow profile.

What is the typical noise figure of the 2N5210RLRA and under what conditions is it measured?

The 2N5210RLRA has a typical noise figure (NF) of 2.0 dB, measured at I_C = 20 µAdc, V_CE = 5.0 Vdc, R_S = 10 kΩ, and f = 1.0 kHz. This value reflects its suitability for low-level signal amplification where minimizing added noise is critical - such as electret microphone preamps or precision sensor interfaces. NF degrades to 3.0 dB at R_S = 22 kΩ (2N5209 condition), confirming the 2N5210RLRA's optimization for lower-source-impedance applications.

How does the DC current gain (h_FE) of the 2N5210RLRA vary with collector current?

The 2N5210RLRA exhibits h_FE = 150–250 at I_C = 1.0 mAdc, rising to 150–250 at I_C = 10 mAdc, and reaching 300–600 at I_C = 100 µAdc - per Motorola's Device Data sheet. This non-monotonic behavior (gain peaking at low currents) means bias networks must be designed using the 1.0 mA h_FE range for stable quiescent point selection in linear amplifiers, while low-current applications (e.g., current mirrors) benefit from the higher 300–600 range.

What thermal derating applies to the 2N5210RLRA above 25°C ambient temperature?

The 2N5210RLRA's total device dissipation is rated at 625 mW at T_A = 25°C, with linear derating of 5.0 mW/°C above that temperature. This means at 75°C ambient, maximum allowable power drops to 625 mW – (50°C × 5.0 mW/°C) = 375 mW. Derating is based on R_θJA = 200°C/W and assumes free-air convection; PCB copper area or heatsinking can improve thermal performance but must be validated per layout.