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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N5210_S00Z

Name: 2N5210_S00Z
Brand: onsemi
SKU: 2N5210_S00Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N5210_S00Z

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA)

Datasheet:: 2N5210_S00Z.pdf

Description:: TRANS NPN 50V 0.1A TO-92-3

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Product details

Overview

2N5210_S00Z from Fairchild Semiconductor is an NPN general-purpose amplifier optimized for low-noise, high-gain analog signal amplification at collector currents from 1 µA to 50 mA. It features V_CEO = 50 V, h_FE = 200–600 (at I_C = 100 µA to 10 mA), f_T = 30 MHz, NF = 2.0–3.0 dB (10 Hz–15.7 kHz), and C_cb = 4.0 pF - enabling use in audio preamplifiers, sensor front-ends, and low-level signal conditioning circuits.

For engineers reviewing the 2N5210_S00Z datasheet, pinout, applications, or equivalent options, key selection criteria include verified noise figure at microamp bias, pulsed h_FE stability across temperature, junction-to-ambient thermal resistance (200 °C/W in TO-92), and dual-package availability (TO-92 and SOT-23) with distinct power dissipation ratings (625 mW vs. 350 mW).

Technical Context

This device operates as a single NPN bipolar junction transistor with fixed-emitter configuration and common-emitter topology. Its design emphasizes low-noise performance at sub-mA bias points (e.g., I_C = 20 µA, R_S = 10 kΩ yields NF = 3.0 dB) and stable current gain across -55°C to +125°C ambient range, supported by documented h_FE contours versus I_C and V_CE.

The 2N5210_S00Z exhibits defined saturation behavior: V_CE(sat) ≤ 0.7 V at I_C = 10 mA / I_B = 1.0 mA, and V_BE(on) = 0.85 V at I_C = 1.0 mA. Its small-signal parameters - h_fe = 250–900 (1 kHz), C_cb = 4.0 pF (V_CB = 5 V), and f_T = 30 MHz - are characterized under pulsed conditions (≤300 µs, ≤2% duty cycle) per datasheet test methodology.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	50 V - Maximum safe collector-emitter voltage before breakdown; defines headroom for low-voltage audio and sensor interface rails.
h_FE (I_C = 10 mA)	250–600 - DC current gain range enabling predictable biasing in Class-A amplifiers without external feedback trimming.
f_T	30 MHz - Unity-gain bandwidth confirming suitability for wideband audio (up to ~1 MHz closed-loop) and RF pre-driver stages.
NF (10 Hz–15.7 kHz)	2.0–3.0 dB - Verified low-noise performance at audio frequencies with 10–22 kΩ source impedances; critical for microphone and piezo sensor amplification.
P_D (TO-92)	625 mW - Continuous power dissipation limit at 25°C ambient; derates 5.0 mW/°C above 25°C for thermal design margin.
C_cb	4.0 pF - Collector-base junction capacitance at 5 V reverse bias; determines high-frequency roll-off and Miller effect in CE configurations.
R_θJA	200 °C/W - Junction-to-ambient thermal resistance in TO-92 package; used to calculate max ambient temperature for 150°C junction limit.

Pinout & Package

2N5210_S00Z is supplied in TO-92 plastic package (3-lead, straight lead form). Pin assignment follows standard JEDEC TO-92 outline: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector. Marking "3M" identifies the device on-body.

Pin/Terminal	Circuit Role	Design Meaning
Emitter (Pin 1)	Current sink terminal in common-emitter configuration	Provides low-impedance return path; bias stability depends on emitter resistor or current source implementation.
Base (Pin 2)	Control input for minority-carrier injection	Requires current-limited drive (e.g., via base resistor) to avoid exceeding I_B(max) derived from I_C(max)/h_FE(min).
Collector (Pin 3)	Output current source terminal	Connects to load or next stage; voltage swing limited by V_CEO and supply rail; sensitive to capacitive loading due to f_T and C_cb.

Key Features

Feature	Design Value
Low-noise operation	NF = 2.0 dB at I_C = 20 µA, R_S = 22 kΩ, 10 Hz–15.7 kHz - enables high-fidelity amplification of weak transducer signals without added noise floor.
High DC current gain	h_FE ≥ 200 at I_C = 100 µA - supports stable biasing in ultra-low-power analog front-ends with minimal base drive current.
Wideband small-signal response	f_T = 30 MHz and h_fe = 900 at 1 kHz - ensures flat gain up to mid-audio frequencies and predictable frequency compensation in feedback networks.
Thermally robust construction	T_J rating of -55°C to +150°C with R_θJA = 200 °C/W - allows deployment in industrial environments without forced cooling in <100 mW dissipation applications.
Dual-package compatibility	Identical electrical specs in TO-92 (625 mW) and SOT-23 (350 mW) - permits footprint flexibility between through-hole prototyping and space-constrained PCB layouts.

Applications

Audio Preamplifier Stage	Capacitive Sensor Signal Conditioning
Use Scenario: Amplifying output from electret condenser microphones (ECM) with 2–10 kΩ output impedance into ADC input buffers. IC Role / Device Role / Timing Role: NPN common-emitter voltage amplifier providing 20–40 dB gain with minimal added noise. Use Value: NF = 2.0 dB at 22 kΩ source resistance ensures signal-to-noise ratio remains >60 dB for voice-band signals without requiring complex noise-canceling topologies.	Use Scenario: Boosting weak charge signals from MEMS accelerometers or humidity sensors prior to integrator or ADC sampling. IC Role / Device Role / Timing Role: Low-bias transimpedance amplifier front-end with stable h_FE at I_C = 10–100 µA. Use Value: h_FE ≥ 250 at I_C = 100 µA enables precise current-to-voltage conversion with <1% gain drift over -40°C to +85°C.
Low-Power Analog Front-End	Industrial Temperature Sensor Interface
Use Scenario: Biasing thermistor or RTD bridges in battery-powered IoT nodes where quiescent current must stay below 50 µA. IC Role / Device Role / Timing Role: High-h_FE NPN switch/amplifier operating in linear region at I_C = 1–10 µA. Use Value: h_FE = 600 at I_C = 100 µA allows base current reduction to <17 nA, minimizing bridge excitation error and extending battery life.	Use Scenario: Linearizing and amplifying output from silicon bandgap temperature sensors (e.g., LM35 derivatives) in factory automation controllers. IC Role / Device Role / Timing Role: Precision DC-coupled amplifier with low V_BE(on) variation (0.85 V ±0.05 V) across temperature. Use Value: V_BE(on) stability ensures <±0.5°C measurement accuracy over 0–100°C when used in ratiometric reference designs.

Audio Preamplifier Stage

Capacitive Sensor Signal Conditioning

Use Scenario: Amplifying output from electret condenser microphones (ECM) with 2–10 kΩ output impedance into ADC input buffers.

IC Role / Device Role / Timing Role: NPN common-emitter voltage amplifier providing 20–40 dB gain with minimal added noise.

Use Value: NF = 2.0 dB at 22 kΩ source resistance ensures signal-to-noise ratio remains >60 dB for voice-band signals without requiring complex noise-canceling topologies.

Use Scenario: Boosting weak charge signals from MEMS accelerometers or humidity sensors prior to integrator or ADC sampling.

IC Role / Device Role / Timing Role: Low-bias transimpedance amplifier front-end with stable h_FE at I_C = 10–100 µA.

Use Value: h_FE ≥ 250 at I_C = 100 µA enables precise current-to-voltage conversion with <1% gain drift over -40°C to +85°C.

Low-Power Analog Front-End

Industrial Temperature Sensor Interface

Use Scenario: Biasing thermistor or RTD bridges in battery-powered IoT nodes where quiescent current must stay below 50 µA.

IC Role / Device Role / Timing Role: High-h_FE NPN switch/amplifier operating in linear region at I_C = 1–10 µA.

Use Value: h_FE = 600 at I_C = 100 µA allows base current reduction to <17 nA, minimizing bridge excitation error and extending battery life.

Use Scenario: Linearizing and amplifying output from silicon bandgap temperature sensors (e.g., LM35 derivatives) in factory automation controllers.

IC Role / Device Role / Timing Role: Precision DC-coupled amplifier with low V_BE(on) variation (0.85 V ±0.05 V) across temperature.

Use Value: V_BE(on) stability ensures <±0.5°C measurement accuracy over 0–100°C when used in ratiometric reference designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT5210	SOT-23 package only; P_D = 350 mW; R_θJA = 357 °C/W; identical electrical specs per shared datasheet.	Preferred for space-constrained PCBs; unsuitable for >150 mW continuous dissipation without heatsinking.	Select MMBT5210 when board area is constrained and thermal budget allows higher junction temperature rise.
2N3904	Lower f_T (300 MHz vs. 30 MHz), higher V_CEO (40 V), lower NF (4–5 dB), h_FE = 100–300 at I_C = 10 mA.	Better for digital switching; less optimal for low-noise analog amplification below 100 µA.	Choose 2N3904 for cost-sensitive switching or medium-gain digital logic interfaces; avoid for <5 µV noise-critical paths.

Compared with MMBT5210 and 2N3904, the 2N5210_S00Z delivers superior low-noise performance at microamp bias points and higher thermal margin in TO-92 packaging, making it the preferred choice for precision analog signal chains where noise floor and thermal stability outweigh footprint constraints.

Availability

2N5210_S00Z is available at Aetrix Electronics and suitable for audio preamplifiers, capacitive sensor interfaces, and low-power analog front-ends requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 2N5210_S00Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016. Its legacy products remain widely deployed in industrial and consumer systems.

The 2N5210_S00Z belongs to Fairchild's general-purpose NPN transistor family designed specifically for low-noise, high-gain linear amplification in audio, sensor, and instrumentation applications - not for switching or power regulation.

FAQ

What is the maximum collector current rating for the 2N5210_S00Z?

The 2N5210_S00Z has a continuous collector current rating (I_C) of 100 mA per Absolute Maximum Ratings. However, its intended operating range for low-noise amplification is 1 µA to 50 mA. At I_C = 100 mA, V_CE(sat) rises to ≤0.7 V only when I_B = 10 mA, and thermal limits require strict derating above 25°C ambient.

Does the 2N5210_S00Z support operation at -55°C?

Yes, the 2N5210_S00Z is rated for operation from -55°C to +150°C junction temperature. Electrical characteristics including h_FE, V_BE(on), and NF are characterized down to -40°C in typical curves, and the device maintains functionality at -55°C per storage and operating range specification - validated in military-grade TO-92 variants.

Is the 2N5210_S00Z pin-compatible with the MMBT5210?

No - while both share identical electrical specifications per the Fairchild datasheet, the 2N5210_S00Z uses TO-92 packaging (3-lead, straight leads, marking "3M"), whereas the MMBT5210 uses SOT-23 (3-lead, gull-wing, marking "3M"). Their footprints, thermal paths, and mechanical mounting are incompatible without PCB redesign.

What is the noise figure of the 2N5210_S00Z at 1 kHz?

The 2N5210_S00Z does not specify a single noise figure value at 1 kHz; instead, its NF is characterized across bandwidths: 3.0 dB at I_C = 20 µA, R_S = 10 kΩ, 1.0 kHz, 200 Hz bandwidth. This reflects narrowband noise performance relevant to tone detection and filter-based sensor readouts.

Can the 2N5210_S00Z be used in switching applications?

The 2N5210_S00Z can function as a saturated switch, but it is not optimized for that role. Its V_CE(sat) = 0.7 V at I_C/I_B = 10, and h_FE drops significantly above 10 mA - making it less efficient than purpose-built switches like the 2N3904. Use it only in low-speed, low-duty-cycle switching where gain linearity matters more than saturation efficiency.

2N5210_S00Z Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA)

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 700mV @ 1mA, 10mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 100µA, 5V

Power - Max:: 625 mW

Frequency - Transition:: 30MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

2N5210_S00Z FAQ

1.How can I place an order for 2N5210_S00Z through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5210_S00Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5210_S00Z reliable?

The price and inventory of 2N5210_S00Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5210_S00Z is usually 5 days.

3.What payment methods are accepted for 2N5210_S00Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5210_S00Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5210_S00Z?

2N5210_S00Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5210_S00Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5210_S00Z?

For technical support, including 2N5210_S00Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5210_S00Z requirements.

6.How does Aetrix verify that 2N5210_S00Z is sourced from the original manufacturer or authorized distributors?

All 2N5210_S00Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5210_S00Z meets industry standards.

7.What is the process for return or replacement of 2N5210_S00Z?

All 2N5210_S00Z units undergo pre-shipment inspection (PSI). If there is an issue with 2N5210_S00Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5210_S00Z part is unused and in its original packaging.

Return procedure for 2N5210_S00Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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