onsemi 2N5210TA

Overview

2N5210TA from Fairchild Semiconductor is an NPN general-purpose amplifier transistor optimized for low-noise, high-gain signal amplification at collector currents from 1 µA to 50 mA. It features V_CEO = 50 V, h_FE = 200–600 (at I_C = 100 µA to 10 mA), f_T = 30 MHz, NF = 2.0–3.0 dB, and operates across –55°C to +150°C. It is used in audio preamplifiers, sensor interface stages, and low-level analog signal conditioning circuits.

For engineers reviewing the 2N5210TA datasheet, pinout, applications, or equivalent options, key selection criteria include its low-noise figure at microamp bias, wide h_FE range across operating current, TO-92 package thermal resistance (R_θJA = 200°C/W), and suitability for linear amplification in battery-powered instrumentation.

Technical Context

The 2N5210TA is a silicon planar epitaxial NPN bipolar junction transistor designed for linear amplification-not switching-emphasizing gain stability and noise performance over wide collector current ranges. Its h_FE maintains ≥250 at I_C = 1.0 mA and ≥250 at I_C = 10 mA, with V_CE(sat) ≤ 0.7 V at I_C = 10 mA / I_B = 1 mA.

It delivers consistent small-signal behavior: h_fe = 250–900 at 1 kHz, C_cb = 4.0 pF at V_CB = 5.0 V, and noise figure as low as 2.0 dB (R_S = 22 kΩ, 10 Hz–15.7 kHz). Thermal design must account for its 625 mW total dissipation at 25°C, derating by 5.0 mW/°C above ambient.

Key Specifications

Pinout & Package

2N5210TA is housed in a through-hole TO-92 package (JEDEC TO-92-3), with standard lead configuration: Emitter (pin 1), Base (pin 2), Collector (pin 3) - viewed from flat side with leads down, left-to-right.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Compared with BC547B and PN2222A, the 2N5210TA provides superior noise performance (2.0 dB vs. ≥4.0 dB) and wider h_FE range at low I_C, making it preferred for precision analog front-ends where signal integrity at microamp bias is critical.

Availability

2N5210TA is available at Aetrix Electronics and suitable for audio preamplifiers, sensor signal conditioning circuits, and low-power analog front-ends requiring stable component supply and long-term industrial availability.

Supply support for 2N5210TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in analog, discrete, and power management ICs before its acquisition by ON Semiconductor in 2016; its legacy products remain widely deployed in industrial and consumer systems.

The 2N5210TA belongs to Fairchild's general-purpose bipolar transistor family, engineered specifically for low-noise, high-gain linear amplification in cost-sensitive analog signal chains from audio to instrumentation.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5210TA?

The 2N5210TA has a guaranteed V_CEO rating of 50 V under standard test conditions (I_C = 1.0 mA, I_B = 0). This rating is valid up to +150°C junction temperature and defines the absolute maximum voltage that can be applied between collector and emitter without risking avalanche breakdown. Exceeding this value may cause irreversible device failure.

Does the 2N5210TA support operation at very low collector currents?

Yes, the 2N5210TA is explicitly characterized for operation down to 1 µA collector current, with h_FE ≥ 200 at I_C = 100 µA and usable gain maintained across the full 1 µA–50 mA range. Its low I_CBO (≤50 nA) and stable V_BE(on) make it suitable for ultra-low-power analog front-ends where quiescent current must be minimized.

What is the noise figure specification of the 2N5210TA and under what conditions is it measured?

The 2N5210TA achieves a noise figure of 2.0 dB when measured at I_C = 20 µA, V_CE = 5.0 V, R_S = 22 kΩ, and frequency band 10 Hz to 15.7 kHz. A second condition yields 3.0 dB at I_C = 20 µA, V_CE = 5.0 V, R_S = 10 kΩ, f = 1.0 kHz. These values are specified in the official Fairchild datasheet Rev B and reflect its suitability for low-level audio and sensor amplification.

Is the 2N5210TA available in tape-and-reel packaging?

No - the 2N5210TA variant uses ammo-pack packaging per Fairchild's official product status page. Tape-and-reel versions are designated separately as 2N5210TF and 2N5210TFR. The "TA" suffix specifically indicates TO-92 in ammo pack, with marking lines "2N", "5210", and "-&3".

How does the thermal resistance of the 2N5210TA affect its power dissipation capability?

The 2N5210TA has R_θJA = 200°C/W in free-air conditions. At ambient temperature of 25°C, its 625 mW maximum power dissipation implies a theoretical junction rise of 125°C - reaching the 150°C limit. For reliable continuous operation above 300 mW, PCB copper pour or forced airflow is required to reduce effective R_θJA and maintain T_J < 130°C.