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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N5210TF

Name: 2N5210TF
Brand: onsemi
SKU: 2N5210TF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N5210TF

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Datasheet:: 2N5210TF.pdf

Description:: TRANS NPN 50V 0.1A TO-92-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2N5210TF from Fairchild Semiconductor is an NPN general-purpose amplifier optimized for low-noise, high-gain analog signal amplification at collector currents from 1 µA to 50 mA. It features V_CEO = 50 V, h_FE = 250–600 (at I_C = 1–10 mA), f_T = 30 MHz, NF = 2.0–3.0 dB (1–15.7 kHz), and operates across –55°C to +150°C. It is commonly used in preamplifier stages of audio and sensor signal conditioning circuits.

For engineers reviewing the 2N5210TF datasheet, pinout, applications, or equivalent options, key selection criteria include its low-noise figure at microamp bias, wide h_FE range across operating current, TO-92 package thermal resistance (R_θJA = 200°C/W), and verified performance in low-current linear amplification roles.

Technical Context

The 2N5210TF operates as a single NPN bipolar junction transistor with common-emitter configuration. Its design emphasizes stable DC current gain (h_FE) over three decades of collector current (100 µA–10 mA) and low noise at sub-mA bias points, enabling precision small-signal amplification without active bias compensation.

It supports linear operation up to f_T = 30 MHz under specified conditions (I_C = 500 µA, V_CE = 5 V), with C_cb = 4.0 pF at V_CB = 5 V and noise figure tightly controlled via emitter-base geometry and epitaxial base doping-critical for audio front-ends and instrumentation amplifiers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	50 V - Maximum safe collector-emitter voltage before breakdown; defines usable supply headroom in single-supply amplifiers.
h_FE (I_C = 1 mA)	250–600 - High and consistent DC current gain enables stable biasing with minimal base drive current.
f_T	30 MHz - Unity-gain bandwidth confirms suitability for audio and low-MHz RF preamp stages.
NF (1 kHz)	3.0 dB - Low noise figure at 1 kHz with R_S = 10 kΩ ensures fidelity in microphone and sensor interface applications.
P_D (T_A = 25°C)	625 mW - Power dissipation limit in TO-92 package; derates 5.0 mW/°C above ambient.
T_J Range	–55°C to +150°C - Wide junction temperature range supports industrial and automotive under-hood use cases.

Pinout & Package

2N5210TF is housed in a through-hole TO-92 package (JEDEC TO-92AB), marked "3M", with standard C-B-E lead assignment (Collector–Base–Emitter). Thermal resistance is R_θJA = 200°C/W, suitable for natural-convection PCB mounting.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Emitting terminal for majority carriers	Reference node for bias network; connects to ground or emitter degeneration resistor in CE amplifiers.
2 (Base)	Control electrode for carrier injection	Accepts low-current input signal; requires stable voltage divider or current source for Q-point stability.
3 (Collector)	Current collection node	Drives load or next stage; placed at positive supply rail in common-emitter topology with collector resistor.

Key Features

Feature	Design Value
Low-noise amplification	NF = 2.0 dB (10 Hz–15.7 kHz, I_C = 20 µA, R_S = 22 kΩ) enables high-SNR signal recovery in weak-input systems.
High DC current gain	h_FE ≥ 250 at I_C = 1 mA ensures reliable bias point control with minimal base current error.
Stable gain vs. temperature	h_FE variation ≤ ±25% from –40°C to +125°C supports consistent performance in unregulated environments.
Wide operating current range	Functional from 1 µA to 50 mA collector current, allowing flexible trade-offs between noise, speed, and power.

Applications

Audio Preamplifier Stage	Temperature Sensor Signal Conditioning
Use Scenario: Amplifying low-level output from electret condenser microphones or piezoelectric transducers in portable audio devices. IC Role / Device Role / Timing Role: NPN small-signal amplifier in common-emitter configuration with emitter degeneration for linearity. Use Value: 3.0 dB noise figure at 1 kHz and h_FE > 250 at 1 mA enable clean gain without added op-amp complexity or power overhead.	Use Scenario: Boosting millivolt-level outputs from silicon bandgap or thermistor-based temperature sensors before ADC sampling. IC Role / Device Role / Timing Role: Linear current amplifier converting sensor voltage to proportional current for ratiometric measurement. Use Value: Stable h_FE across –55°C to +150°C and low I_CBO (<50 nA) minimize drift and leakage-induced offset errors.
DC Motor Speed Feedback Amplifier	Industrial Analog Current Loop Driver
Use Scenario: Amplifying tachometer generator signals in closed-loop motor control systems requiring robustness to EMI and temperature swing. IC Role / Device Role / Timing Role: Single-transistor amplifier with RC-filtered input and collector-loaded output driving optocoupler input. Use Value: 50 V V_CEO withstands back-EMF spikes; f_T = 30 MHz ensures adequate phase margin in feedback paths up to ~100 kHz.	Use Scenario: Converting DAC voltage outputs into precise 4–20 mA loop currents in PLC analog I/O modules. IC Role / Device Role / Timing Role: NPN current source follower with emitter degeneration resistor and base bias network. Use Value: Tight h_FE distribution (250–600) and low V_BE(on) = 0.85 V reduce calibration burden and improve current accuracy over temperature.

Audio Preamplifier Stage

Temperature Sensor Signal Conditioning

Use Scenario: Amplifying low-level output from electret condenser microphones or piezoelectric transducers in portable audio devices.

IC Role / Device Role / Timing Role: NPN small-signal amplifier in common-emitter configuration with emitter degeneration for linearity.

Use Value: 3.0 dB noise figure at 1 kHz and h_FE > 250 at 1 mA enable clean gain without added op-amp complexity or power overhead.

Use Scenario: Boosting millivolt-level outputs from silicon bandgap or thermistor-based temperature sensors before ADC sampling.

IC Role / Device Role / Timing Role: Linear current amplifier converting sensor voltage to proportional current for ratiometric measurement.

Use Value: Stable h_FE across –55°C to +150°C and low I_CBO (<50 nA) minimize drift and leakage-induced offset errors.

DC Motor Speed Feedback Amplifier

Industrial Analog Current Loop Driver

Use Scenario: Amplifying tachometer generator signals in closed-loop motor control systems requiring robustness to EMI and temperature swing.

IC Role / Device Role / Timing Role: Single-transistor amplifier with RC-filtered input and collector-loaded output driving optocoupler input.

Use Value: 50 V V_CEO withstands back-EMF spikes; f_T = 30 MHz ensures adequate phase margin in feedback paths up to ~100 kHz.

Use Scenario: Converting DAC voltage outputs into precise 4–20 mA loop currents in PLC analog I/O modules.

IC Role / Device Role / Timing Role: NPN current source follower with emitter degeneration resistor and base bias network.

Use Value: Tight h_FE distribution (250–600) and low V_BE(on) = 0.85 V reduce calibration burden and improve current accuracy over temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT5210	SOT-23 surface-mount variant; same electrical specs but lower P_D (350 mW) and higher R_θJA (357°C/W).	Used where board space is constrained and reflow assembly is required; unsuitable for high-power dissipation.	Select MMBT5210 only when footprint and assembly method require SMT; verify thermal margin at full I_C.
2N3904	Lower f_T (300 MHz typical but not guaranteed at low I_C), higher V_CEO (40 V), and wider h_FE spread (100–400); no specified NF below 100 kHz.	Preferred for digital switching; less optimal for low-noise analog amplification below 100 kHz.	Choose 2N3904 only for cost-sensitive non-critical amplification; avoid where <3 dB NF or stable h_FE <1 mA is required.

Compared with MMBT5210 and 2N3904, the 2N5210TF delivers superior low-frequency noise performance and tighter h_FE consistency at microamp bias-making it the preferred choice for precision analog front-ends where TO-92 mounting is acceptable.

Availability

2N5210TF is available at Aetrix Electronics and suitable for audio preamplifier stages, temperature sensor signal conditioning, DC motor speed feedback amplifiers, and industrial analog current loop drivers requiring stable component supply and long-term manufacturability.

Supply support for 2N5210TF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.

The 2N5210TF belongs to Fairchild's legacy general-purpose bipolar transistor product line, designed specifically for low-noise, high-gain linear amplification in industrial, audio, and sensor interface applications.

FAQ

What is the maximum collector current rating for the 2N5210TF?

The 2N5210TF has a continuous collector current rating (I_C) of 100 mA per Absolute Maximum Ratings. However, its specified linear amplification range is optimized from 1 µA to 50 mA, where h_FE, noise figure, and f_T are characterized. Operating near 100 mA requires careful thermal management due to its 625 mW power limit in TO-92 packaging.

Does the 2N5210TF have a specified noise figure at audio frequencies?

Yes-the 2N5210TF specifies NF = 2.0 dB at 10 Hz–15.7 kHz with I_C = 20 µA, V_CE = 5.0 V, and R_S = 22 kΩ, and NF = 3.0 dB at 1.0 kHz with R_S = 10 kΩ. These values are measured and published in Fairchild's official datasheet, confirming its suitability for high-fidelity audio preamplification.

Is the 2N5210TF pin-compatible with the MMBT5210?

No-the 2N5210TF uses a TO-92 package with C-B-E pinout (lead 1 = E, 2 = B, 3 = C), while the MMBT5210 uses SOT-23 with C-B-E orientation but different physical pin spacing and solder pad layout. They share identical electrical behavior but are not mechanically interchangeable; PCB redesign is required for substitution.

What is the base-emitter on voltage (V_BE(on)) for the 2N5210TF under typical bias conditions?

The 2N5210TF exhibits V_BE(on) = 0.85 V at I_C = 1.0 mA and V_CE = 5.0 V. This value is confirmed in the "ON CHARACTERISTICS" table of the datasheet and remains stable across –40°C to +125°C, supporting predictable bias network design in temperature-varying environments.

Can the 2N5210TF be used in switching applications?

The 2N5210TF is characterized and optimized for linear amplification-not switching. While it can saturate (V_CE(sat) = 0.7 V at I_C = 10 mA/I_B = 1 mA), its h_FE roll-off and lack of switching-specific parameters (e.g., t_on/t_off, storage time) make dedicated switching transistors like 2N3904 more appropriate for digital logic or PWM drive tasks.

2N5210TF Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 700mV @ 1mA, 10mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 100µA, 5V

Power - Max:: 625 mW

Frequency - Transition:: 30MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

2N5210TF FAQ

1.How can I place an order for 2N5210TF through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5210TF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5210TF reliable?

The price and inventory of 2N5210TF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5210TF is usually 5 days.

3.What payment methods are accepted for 2N5210TF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5210TF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5210TF?

2N5210TF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5210TF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5210TF?

For technical support, including 2N5210TF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5210TF requirements.

6.How does Aetrix verify that 2N5210TF is sourced from the original manufacturer or authorized distributors?

All 2N5210TF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5210TF meets industry standards.

7.What is the process for return or replacement of 2N5210TF?

All 2N5210TF units undergo pre-shipment inspection (PSI). If there is an issue with 2N5210TF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5210TF part is unused and in its original packaging.

Return procedure for 2N5210TF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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