onsemi 2N5210TFR

Overview

2N5210TFR from Fairchild Semiconductor is an NPN general-purpose amplifier optimized for low-noise, high-gain analog signal amplification at collector currents from 1 µA to 50 mA. It features V_CEO = 50 V, h_FE = 250–600 (at I_C = 1–10 mA), f_T = 30 MHz, NF = 2.0–3.0 dB, and C_cb = 4.0 pF - enabling use in audio preamplifiers, sensor interface stages, and low-level signal conditioning circuits.

For engineers reviewing the 2N5210TFR datasheet, pinout, applications, or equivalent options, key selection criteria include verified noise figure at 1–10 kHz, DC current gain linearity across 100 µA–10 mA, thermal resistance (R_θJA = 200 °C/W in TO-92), and junction temperature range (−55°C to +150°C) for industrial ambient operation.

Technical Context

The 2N5210TFR operates as a single NPN bipolar junction transistor with fixed-emitter configuration, supporting linear amplification in common-emitter topology. Its design emphasizes low-noise performance (NF ≤ 3.0 dB at 1 kHz, R_S = 10 kΩ) and stable h_FE over temperature (±25% variation from −40°C to +125°C).

It delivers 30 MHz current-gain bandwidth at I_C = 500 µA and V_CE = 5 V, with V_BE(on) = 0.85 V and V_CE(sat) = 0.7 V at I_C = 10 mA / I_B = 1 mA - confirming suitability for low-voltage, medium-speed analog gain blocks where saturation voltage and base drive efficiency matter.

Key Specifications

Pinout & Package

2N5210TFR is packaged in TO-92 with standard through-hole lead configuration: Collector (C), Base (B), Emitter (E) arranged in straight-line pin order (viewed from flat side, leads down). Package outline conforms to JEDEC TO-92 variant A (3.3 mm width, 4.6 mm height).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN amplifier applications.

Compared with MMBT5210 and 2N3904, the 2N5210TFR offers superior low-frequency noise performance and TO-92 mechanical compatibility for legacy through-hole designs - making it optimal for service replacement, industrial repair, and prototyping where thermal margin and manual assembly are priorities.

Availability

2N5210TFR is available at Aetrix Electronics and suitable for audio preamplifiers, sensor signal conditioners, and instrumentation front-end circuits requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 2N5210TFR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete devices before its acquisition by ON Semiconductor in 2016.

The 2N5210TFR belongs to Fairchild's legacy NPN general-purpose amplifier family, designed specifically for low-noise, high-gain analog signal amplification in industrial, test equipment, and audio applications.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5210TFR?

The 2N5210TFR has a maximum collector-emitter voltage (V_CEO) rating of 50 V at T_A = 25°C. This rating assumes a maximum junction temperature of 150°C and applies to continuous DC operation. For pulsed or low-duty-cycle conditions, consult Fairchild's original application guidance before exceeding 50 V, as thermal limits may constrain safe operation.

Does the 2N5210TFR have a specified noise figure, and under what conditions?

Yes, the 2N5210TFR specifies a noise figure (NF) of 2.0 dB at I_C = 20 µA, V_CE = 5.0 V, R_S = 22 kΩ, and f = 10 Hz–15.7 kHz, and 3.0 dB at R_S = 10 kΩ under identical bias. These values are measured per Fairchild's Rev B datasheet and confirm its suitability for low-noise preamplifier roles where source impedance exceeds 10 kΩ.

What is the DC current gain (h_FE) range of the 2N5210TFR across operating conditions?

The 2N5210TFR exhibits h_FE = 200–600 depending on collector current: minimum 200 at I_C = 100 µA, 250 at I_C = 1.0 mA, and 250 at I_C = 10 mA (all at V_CE = 5.0 V, T_A = 25°C). Gain remains within ±25% across −40°C to +125°C, supporting stable biasing in unregulated environments.

Is the 2N5210TFR available in surface-mount packaging, and how does it compare electrically?

Yes - the MMBT5210 is the SOT-23 surface-mount variant of the 2N5210TFR. Electrically, both share identical absolute maximum ratings, h_FE, f_T, NF, and V_BE(on). The primary difference is thermal: MMBT5210 has R_θJA = 357 °C/W versus 200 °C/W for the 2N5210TFR in TO-92, requiring careful PCB thermal design for equivalent power handling.

What is the collector-base capacitance (C_cb) of the 2N5210TFR, and why does it matter?

The 2N5210TFR has a typical collector-base capacitance (C_cb) of 4.0 pF at V_CB = 5.0 V and f = 100 kHz. This parameter directly impacts high-frequency gain roll-off and phase margin in common-emitter amplifiers due to the Miller effect. At 30 MHz f_T, this low C_cb helps maintain usable bandwidth in multi-stage analog designs without excessive neutralization.