onsemi 2N5302G

Overview

2N5302G from onsemi is a high-power NPN silicon transistor designed for power amplifier and switching circuits, featuring V_CEO = 60 Vdc, I_C = 30 Adc continuous, P_D = 200 W at T_C = 25°C, V_CE(sat) ≤ 0.75 Vdc @ I_C = 10 Adc/I_B = 1.0 Adc, and TO-204AA (TO-3) metal package with collector-connected case. It operates in industrial motor control inverters and DC-DC converter output stages.

For engineers reviewing the 2N5302G datasheet, pinout, applications, or equivalent options, key selection considerations include thermal resistance (R_θJC = 0.875°C/W), safe operating area (SOA) limits up to 200°C junction temperature, saturation voltage performance under high-current pulse conditions, and Pb-free compliance per JEDEC standards.

Technical Context

This device uses a planar epitaxial silicon structure optimized for high-current switching and linear amplification. Its SOA is defined by secondary breakdown, bonding wire current limits, and thermal constraints - validated for pulse duty cycles ≤10% and peak currents up to 30 Adc.

Dynamic behavior includes f_T = 2.0 MHz at I_C = 1.0 Adc/V_CE = 10 Vdc/1 MHz, with switching times t_r ≤ 1.0 μs, t_s ≤ 2.0 μs, and t_f ≤ 1.0 μs under specified test conditions (V_CC = 30 Vdc, I_C = 10 Adc, I_B1 = I_B2 = 1.0 Adc).

Key Specifications

Pinout & Package

2N5302G uses the TO-204AA (TO-3) metal can package with collector connected to the case. Mounting surface must be electrically isolated unless circuit design intentionally references collector to chassis ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power NPN transistor applications.

Compared with MJ15003 and 2N6284, the 2N5302G delivers optimal balance of current capacity, low saturation loss, and thermal efficiency for 48–60 Vdc industrial power stages - making it preferred for thermally constrained designs requiring ≥25 Adc continuous conduction.

Availability

2N5302G is available at Aetrix Electronics and suitable for motor drive inverters, industrial DC-DC converters, welding power supplies, and uninterruptible power systems requiring stable component supply across multi-year production cycles.

Supply support for 2N5302G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The 2N5302G belongs to onsemi's legacy high-power bipolar transistor product line, engineered specifically for ruggedized industrial switching and linear amplification where thermal stability and SOA integrity are critical.

FAQ

What is the maximum junction temperature rating for the 2N5302G?

The 2N5302G has an operating junction temperature range of –65°C to +200°C, verified per JEDEC standards. This wide range supports deployment in harsh environments such as industrial motor drives and welding equipment where ambient temperatures exceed 85°C and transient thermal spikes occur regularly. The 2N5302G maintains parameter stability across this full range when operated within its SOA limits.

Does the 2N5302G require a heatsink in all applications?

Yes - the 2N5302G must be mounted to a heatsink in any application dissipating more than ~5 W continuously. With R_θJC = 0.875°C/W and P_D = 200 W at T_C = 25°C, even modest power levels (e.g., 20 W) raise the junction temperature by >17°C above case temperature. A properly sized heatsink ensures T_J remains below 150°C during sustained operation, preserving long-term reliability of the 2N5302G.

Can the 2N5302G be used in linear amplifier mode?

Yes - the 2N5302G is characterized for linear operation with h_FE = 40–60 at I_C = 1.0 Adc/V_CE = 2.0 Vdc and exhibits stable gain down to I_C = 30 Adc. Its SOA curve (Figure 5) explicitly includes active-region boundaries, confirming suitability for Class-A/B audio output stages and precision current regulators where V_CE > 2 Vdc and I_C < 30 Adc.

What is the base current requirement to fully saturate the 2N5302G at 30 Adc collector current?

To achieve V_CE(sat) ≤ 3.0 Vdc at I_C = 30 Adc, the 2N5302G requires I_B = 6.0 Adc per datasheet specifications. This corresponds to a forced beta (I_C/I_B) of 5.0, ensuring robust saturation under worst-case h_FE degradation at elevated temperature. Driving the base with ≥6.0 Adc guarantees low-loss switching in high-current power converters using the 2N5302G.

Is the 2N5302G pin-compatible with older non-Pb-free versions like 2N5302?

Yes - the 2N5302G shares identical TO-204AA (TO-3) mechanical dimensions, pinout (Pin 1 = Base, Pin 2 = Emitter, Case = Collector), and electrical specifications with the legacy 2N5302. The "G" suffix denotes Pb-free plating only; no changes were made to die design, packaging geometry, or thermal interface. Customers may directly substitute 2N5302G for 2N5302 in existing PCB layouts without modification.