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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N5400G

Name: 2N5400G
Brand: onsemi
SKU: 2N5400G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N5400G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body

Datasheet:: 2N5400G.pdf

Description:: TRANS PNP 120V 0.6A TO92

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2N5400G from onsemi is a PNP silicon general-purpose amplifier transistor in TO-92 package, rated for V_CEO = 120 V, I_C = 600 mA, P_D = 625 mW at T_A = 25°C, with h_FE = 30–180 (at I_C = 1–50 mA), and f_T = 100–400 MHz - used in low-frequency amplification and switching circuits in industrial control and power supply bias networks.

For engineers reviewing the 2N5400G datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CEO/I_C derating behavior, h_FE consistency across temperature (−55°C to +150°C), TO-92 thermal resistance (R_JA = 200°C/W), and Pb-free compliance per J-STD-609.

Technical Context

This PNP bipolar junction transistor operates in active, saturation, and cutoff regions with defined DC gain (h_FE) across collector currents from 1 mA to 50 mA and V_CE = 5 V. Its breakdown ratings - V_(BR)CEO = 120 V, V_(BR)CBO = 130 V, V_(BR)EBO = 5.0 V - establish safe operating limits for high-voltage PNP biasing and level-shifting applications.

Small-signal performance includes f_T up to 400 MHz, C_obo ≤ 6.0 pF at V_CB = 10 V, and NF ≤ 8.0 dB at I_C = 250 µA - confirming suitability for audio-frequency amplification and moderate-speed switching where gain-bandwidth trade-offs are managed via external biasing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	120 Vdc - maximum collector-emitter voltage before breakdown under open-base conditions; sets upper rail limit in PNP switch/amplifier stages.
I_C (max)	600 mAdc - continuous collector current rating; defines linear/saturation load capability at ambient temperature.
P_D @ T_A	625 mW - total device dissipation at 25°C ambient; requires heatsinking or derating above 25°C (5.0 mW/°C).
h_FE	30–180 - DC current gain range at I_C = 1–50 mA and V_CE = 5 V; impacts base drive design and stability margin.
f_T	100–400 MHz - transition frequency; determines usable bandwidth in small-signal amplifiers and switching speed ceiling.
R_JA	200°C/W - junction-to-ambient thermal resistance; governs temperature rise under power dissipation without heatsink.

Pinout & Package

2N5400G uses the TO-92 (Case 29-11) through-hole plastic package with bent leads, standardized for manual and wave soldering. Pin 1 is Emitter, Pin 2 is Base, Pin 3 is Collector - confirmed by onsemi marking diagram and mechanical drawings.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Emitter)	Current exit terminal for PNP operation	Connected to higher potential node (e.g., V_CC) in common-emitter configurations; polarity-critical for bias integrity.
Pin 2 (Base)	Control electrode for minority-carrier injection	Requires negative-going drive relative to emitter to forward-bias BE junction; base resistor sizing depends on h_FE min.
Pin 3 (Collector)	Current entry terminal and output node	Typically tied to load and lower-potential rail; withstands up to 120 V reverse bias when off.

Key Features

Feature	Design Value
Pb-free TO-92 package	Complies with J-STD-609 Class 3 moisture sensitivity and RoHS Directive 2011/65/EU; supports lead-free reflow and hand-soldering.
Wide operating temperature range	Junction temperature span of −55°C to +150°C enables use in automotive under-hood, industrial motor drives, and outdoor power supplies.
Low leakage currents	I_CBO ≤ 100 nA at 100 V and 25°C; ensures stable cutoff in high-impedance bias networks and low-power standby circuits.
Controlled saturation voltages	V_CE(sat) ≤ 0.5 V at I_C/I_B = 10; minimizes conduction loss in switching applications below 600 mA.

Applications

Audio Amplifier Stage	Power Supply Bias Network
Use Scenario: Low-noise preamplifier stage in analog audio signal chains requiring gain stability over temperature. IC Role / Device Role / Timing Role: PNP amplifier transistor configured in common-emitter topology with emitter degeneration. Use Value: h_FE ≥ 30 at I_C = 1 mA and NF ≤ 8.0 dB ensure adequate signal-to-noise ratio and minimal distortion in mid-band audio (20 Hz–20 kHz).	Use Scenario: Constant-current source for error amplifier biasing in linear and switching power supply feedback loops. IC Role / Device Role / Timing Role: PNP current mirror reference element providing stable base current to op-amp input stages. Use Value: V_(BR)CEO = 120 V and I_CBO ≤ 100 nA enable reliable operation across wide input voltage ranges while minimizing drift.
Industrial Relay Driver	High-Voltage Level Shifter
Use Scenario: Driving electromagnetic relay coils rated up to 120 VDC in PLC I/O modules and factory automation controllers. IC Role / Device Role / Timing Role: Switching transistor in common-emitter configuration with flyback diode protection. Use Value: V_CEO = 120 V and I_C = 600 mA support direct coil driving without external Darlington staging; t_on/t_off < 1 µs ensures fast response.	Use Scenario: Translating logic-level signals from 3.3 V/5 V microcontrollers to 24–100 V industrial bus interfaces. IC Role / Device Role / Timing Role: PNP-based level translator with emitter-follower or common-base configuration. Use Value: V_EBO = 5.0 V and V_CBO = 130 V allow safe interface between low-voltage control logic and high-side sensing circuits.

Audio Amplifier Stage

Power Supply Bias Network

Use Scenario: Low-noise preamplifier stage in analog audio signal chains requiring gain stability over temperature.

IC Role / Device Role / Timing Role: PNP amplifier transistor configured in common-emitter topology with emitter degeneration.

Use Value: h_FE ≥ 30 at I_C = 1 mA and NF ≤ 8.0 dB ensure adequate signal-to-noise ratio and minimal distortion in mid-band audio (20 Hz–20 kHz).

Use Scenario: Constant-current source for error amplifier biasing in linear and switching power supply feedback loops.

IC Role / Device Role / Timing Role: PNP current mirror reference element providing stable base current to op-amp input stages.

Use Value: V_(BR)CEO = 120 V and I_CBO ≤ 100 nA enable reliable operation across wide input voltage ranges while minimizing drift.

Industrial Relay Driver

High-Voltage Level Shifter

Use Scenario: Driving electromagnetic relay coils rated up to 120 VDC in PLC I/O modules and factory automation controllers.

IC Role / Device Role / Timing Role: Switching transistor in common-emitter configuration with flyback diode protection.

Use Value: V_CEO = 120 V and I_C = 600 mA support direct coil driving without external Darlington staging; t_on/t_off < 1 µs ensures fast response.

Use Scenario: Translating logic-level signals from 3.3 V/5 V microcontrollers to 24–100 V industrial bus interfaces.

IC Role / Device Role / Timing Role: PNP-based level translator with emitter-follower or common-base configuration.

Use Value: V_EBO = 5.0 V and V_CBO = 130 V allow safe interface between low-voltage control logic and high-side sensing circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP amplifier transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MPSA92	V_CEO = 300 V, I_C = 500 mA, h_FE = 25–200, TO-92 package	Higher voltage rating but lower current capacity; better for >150 V bias rails	Select MPSA92 when V_CEO margin >180 V is required; verify R_JA = 200°C/W compatibility with thermal layout.
BC557B	V_CEO = 45 V, I_C = 100 mA, h_FE = 200–450, TO-92 package	Lower voltage/current but higher h_FE and tighter gain binning	Choose BC557B only for low-voltage (<50 V), low-current (<100 mA) signal amplification where gain precision matters more than voltage headroom.

Compared with MPSA92 and BC557B, the 2N5400G delivers balanced V_CEO/I_C capability (120 V/600 mA) with industry-standard TO-92 thermal behavior - making it optimal for general-purpose industrial amplification and switching where both voltage margin and current drive are simultaneously required.

Availability

2N5400G is available at Aetrix Electronics and suitable for industrial control systems, analog audio equipment, and power supply feedback networks requiring stable component supply and Pb-free compliance.

Supply support for 2N5400G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and intelligent edge applications.

The 2N5400G belongs to onsemi's legacy discrete transistor product line, designed specifically for cost-sensitive, high-reliability general-purpose amplification and switching in industrial and consumer power electronics.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5400G?

The 2N5400G has a maximum collector-emitter voltage rating (V_(BR)CEO) of 120 Vdc at I_C = 1.0 mAdc and I_B = 0. This rating is validated per onsemi's official datasheet and defines the absolute upper limit for safe operation in the active or cutoff region without avalanche breakdown.

Does the 2N5400G have Pb-free packaging?

Yes, the 2N5400G is explicitly designated as a Pb-free device in onsemi's ordering information and marked with a "G" suffix. It complies with J-STD-609 Class 3 and meets RoHS Directive 2011/65/EU requirements for lead-free soldering processes.

What is the DC current gain (h_FE) range of the 2N5400G at 10 mA collector current?

At I_C = 10 mAdc and V_CE = 5.0 Vdc, the 2N5400G exhibits an h_FE range of 40 to 180 per onsemi's Electrical Characteristics table. This variation reflects process spread and must be accounted for in base resistor design for worst-case turn-on/turn-off behavior.

Can the 2N5400G be used in switching applications?

Yes, the 2N5400G is qualified for switching use with verified t_on and t_off values under defined test conditions (e.g., V_CC = 120 V, I_C/I_B = 10). Its V_CE(sat) ≤ 0.5 V at I_C = 50 mAdc ensures low conduction loss, and its f_T up to 400 MHz supports sub-microsecond transitions.

What is the thermal resistance junction-to-ambient (R_JA) for the 2N5400G in free-air conditions?

The 2N5400G has a thermal resistance junction-to-ambient (R_JA) of 200°C/W when mounted in free air on a standard PCB per onsemi's Thermal Characteristics table. This value assumes no heatsink and guides derating calculations - e.g., maximum allowable P_D drops to 500 mW at T_A = 50°C.

2N5400G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 600 mA

Voltage - Collector Emitter Breakdown (Max):: 120 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 40 @ 10mA, 5V

Power - Max:: 625 mW

Frequency - Transition:: 400MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92 (TO-226)

2N5400G FAQ

1.How can I place an order for 2N5400G through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5400G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5400G reliable?

The price and inventory of 2N5400G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5400G is usually 5 days.

3.What payment methods are accepted for 2N5400G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5400G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5400G?

2N5400G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5400G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5400G?

For technical support, including 2N5400G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5400G requirements.

6.How does Aetrix verify that 2N5400G is sourced from the original manufacturer or authorized distributors?

All 2N5400G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5400G meets industry standards.

7.What is the process for return or replacement of 2N5400G?

All 2N5400G units undergo pre-shipment inspection (PSI). If there is an issue with 2N5400G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5400G part is unused and in its original packaging.

Return procedure for 2N5400G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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