Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N5400_S00Z

Name: 2N5400_S00Z
Brand: onsemi
SKU: 2N5400_S00Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: 2N5400_S00Z

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA)

Datasheet:: 2N5400_S00Z.pdf

Description:: TRANS PNP 120V 0.6A TO-92-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,656

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

2N5400_S00Z from Fairchild Semiconductor is a PNP bipolar junction transistor designed for general-purpose amplification and high-voltage switching applications, with V_CEO = 120 V, I_C = 600 mA, and h_FE = 30–180 at I_C = 1.0–50 mA. It operates across –55°C to +150°C and is commonly used in relay drivers, voltage regulators, and discrete logic interfaces.

For engineers reviewing the 2N5400_S00Z datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, TO-92 package thermal resistance (R_θJA = 200°C/W), saturation voltage (V_CE(sat) ≤ 0.5 V at I_C = 50 mA), and breakdown robustness (V_CBO = 130 V).

Technical Context

The 2N5400_S00Z functions as a medium-power PNP BJT with DC current gain optimized for linear amplification and saturated switching. Its design supports operation under high collector-emitter blocking conditions and exhibits low noise figure (NF = 8.0 dB) in audio-frequency small-signal stages.

Thermal performance is defined by R_θJC = 83.3°C/W and R_θJA = 200°C/W, enabling use in ambient temperatures up to +125°C with derated power dissipation. The device's f_T of 100–400 MHz and C_ob = 6.0 pF support stable gain in RF-coupled preamp stages up to ~100 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	120 V - Maximum safe collector-emitter voltage before breakdown; enables use in 100 V rail switching and HV analog stages.
I_C (continuous)	600 mA - Continuous collector current rating; supports moderate-power load switching without forced cooling.
h_FE	30–180 - DC current gain range across 1–50 mA; allows predictable biasing in Class-A amplifiers and digital switches.
V_CE(sat)	0.2–0.5 V - Low saturation voltage at I_C/I_B = 10/1 mA and 50/5 mA; minimizes conduction loss in saturated switch mode.
f_T	100–400 MHz - Current gain–bandwidth product; ensures usable gain in RF preamplifier and oscillator buffer circuits.
R_θJA	200 °C/W - Junction-to-ambient thermal resistance in free-air; defines maximum power dissipation (625 mW @ 25°C, derated 5 mW/°C above).

Pinout & Package

2N5400_S00Z is housed in a TO-92 plastic package with standard lead configuration: Emitter (pin 1), Base (pin 2), Collector (pin 3), viewed with flat side facing outward and leads downward.

Pin/Terminal	Circuit Role	Design Meaning
Emitter (E)	Current sink terminal for PNP operation	Connected to higher-potential rail in common-base or common-collector configurations; sets reference for base bias network.
Base (B)	Control input for minority-carrier injection	Receives forward-biased current to turn on device; requires current-limiting resistor to prevent overdrive and thermal runaway.
Collector (C)	Output current terminal	Drains current from load to ground or lower-potential node; must withstand full V_CBO = 130 V when reverse-biased.

Key Features

Feature	Design Value
High V_CBO rating	130 V - Enables reliable operation in high-side switching and flyback snubber circuits where collector swings above supply rails.
Low noise figure	NF = 8.0 dB @ 10 Hz–15.7 kHz - Supports clean audio preamplification without added hum or hiss in microphone and sensor front-ends.
Wide operating temperature	–55°C to +150°C - Qualified for industrial and automotive under-hood environments without derating below –40°C.
Stable h_FE vs. temperature	Typical h_FE curves show <15% variation from –40°C to +125°C at fixed I_C - Simplifies bias stability design in unregulated thermal environments.

Applications

Relay Driver Circuit	Linear Voltage Regulator
Use Scenario: Driving electromagnetic relays with coil voltages up to 48 V DC in PLC I/O modules and industrial control panels. IC Role / Device Role / Timing Role: PNP switch providing high-side current sinking to energize relay coils while isolating microcontroller GPIO pins. Use Value: V_CEO = 120 V and I_C = 600 mA ensure margin against inductive kickback and allow direct drive of 500 mW coils without external protection diodes.	Use Scenario: Discrete pass element in adjustable negative-voltage regulators (e.g., –5 V to –15 V) for op-amp biasing and sensor signal conditioning. IC Role / Device Role / Timing Role: Series pass transistor regulating output by modulating emitter current based on error amplifier feedback. Use Value: Low V_CE(sat) (≤0.5 V) and stable h_FE minimize dropout voltage and improve line/load regulation accuracy over temperature.
Discrete Logic Inverter	Audio Pre-amplifier Stage
Use Scenario: Level-shifting and inversion in legacy TTL-to-CMOS interface circuits and discrete gate arrays. IC Role / Device Role / Timing Role: Saturated-switch BJT acting as active-low inverter with pull-up resistor, delivering rail-to-rail logic swing. Use Value: Fast turn-on/off (enabled by f_T > 100 MHz) and low V_BE(sat) = 1.0 V ensure sub-µs propagation delay and compatibility with 5 V logic families.	Use Scenario: First-stage amplification for electret microphone signals in battery-powered voice recorders and intercom systems. IC Role / Device Role / Timing Role: Common-emitter small-signal amplifier biased for low-noise, high-input-impedance operation. Use Value: NF = 8.0 dB and h_fe = 30–200 at 1 kHz enable >60 dB SNR in 20–20 kHz bandwidth without requiring costly low-noise op-amps.

Relay Driver Circuit

Linear Voltage Regulator

Use Scenario: Driving electromagnetic relays with coil voltages up to 48 V DC in PLC I/O modules and industrial control panels.

IC Role / Device Role / Timing Role: PNP switch providing high-side current sinking to energize relay coils while isolating microcontroller GPIO pins.

Use Value: V_CEO = 120 V and I_C = 600 mA ensure margin against inductive kickback and allow direct drive of 500 mW coils without external protection diodes.

Use Scenario: Discrete pass element in adjustable negative-voltage regulators (e.g., –5 V to –15 V) for op-amp biasing and sensor signal conditioning.

IC Role / Device Role / Timing Role: Series pass transistor regulating output by modulating emitter current based on error amplifier feedback.

Use Value: Low V_CE(sat) (≤0.5 V) and stable h_FE minimize dropout voltage and improve line/load regulation accuracy over temperature.

Discrete Logic Inverter

Audio Pre-amplifier Stage

Use Scenario: Level-shifting and inversion in legacy TTL-to-CMOS interface circuits and discrete gate arrays.

IC Role / Device Role / Timing Role: Saturated-switch BJT acting as active-low inverter with pull-up resistor, delivering rail-to-rail logic swing.

Use Value: Fast turn-on/off (enabled by f_T > 100 MHz) and low V_BE(sat) = 1.0 V ensure sub-µs propagation delay and compatibility with 5 V logic families.

Use Scenario: First-stage amplification for electret microphone signals in battery-powered voice recorders and intercom systems.

IC Role / Device Role / Timing Role: Common-emitter small-signal amplifier biased for low-noise, high-input-impedance operation.

Use Value: NF = 8.0 dB and h_fe = 30–200 at 1 kHz enable >60 dB SNR in 20–20 kHz bandwidth without requiring costly low-noise op-amps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MPSA92	V_CEO = 300 V, I_C = 500 mA, h_FE = 25–100 - Higher voltage rating but lower current and narrower gain range.	Better suited for HV flyback snubbers and CRT deflection circuits; less optimal for high-current relay driving.	Select MPSA92 when V_CEO > 150 V is mandatory and I_C < 500 mA suffices.
BC557	V_CEO = 45 V, I_C = 100 mA, h_FE = 110–800 - Lower voltage/current but higher and tighter gain distribution.	Preferred for low-power signal amplification and logic interfacing where voltage stress is < 30 V.	Choose BC557 for space-constrained PCBs needing high h_FE consistency at low bias currents.

Compared with MPSA92 and BC557, the 2N5400_S00Z delivers balanced high-voltage capability (120 V), moderate current drive (600 mA), and broad h_FE tolerance-making it optimal for industrial switching and analog stages where both ruggedness and flexibility are required.

Availability

2N5400_S00Z is available at Aetrix Electronics and suitable for relay driver circuits, linear voltage regulators, discrete logic inverters, and audio pre-amplifier stages requiring stable component supply and long-term industrial availability.

Supply support for 2N5400_S00Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016. Its legacy products remain widely deployed in industrial and automotive systems.

The 2N5400_S00Z belongs to Fairchild's general-purpose bipolar transistor family, engineered for reliability in high-voltage switching and linear amplification roles across industrial controls, power supplies, and legacy equipment replacement.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5400_S00Z?

The 2N5400_S00Z has a maximum collector-emitter voltage rating (V_CEO) of 120 V at T_A = 25°C. This rating is defined with I_C = 1.0 mA and I_B = 0, and reflects the device's ability to block voltage in open-circuit switch applications. Exceeding this value risks avalanche breakdown and permanent degradation of the 2N5400_S00Z junction integrity.

Is the 2N5400_S00Z compatible with TO-92 socket footprints used for other PNP transistors?

Yes, the 2N5400_S00Z uses the standard TO-92 package with E-B-C pinout (flat side facing viewer, leads down). It shares mechanical dimensions and lead spacing with industry-standard TO-92 sockets, enabling drop-in replacement for devices like BC557 and MPSA92-provided electrical parameters (especially V_CEO and h_FE) meet circuit requirements for the 2N5400_S00Z.

What is the typical DC current gain (h_FE) of the 2N5400_S00Z at 10 mA collector current?

At V_CE = 5.0 V and I_C = 10 mA, the 2N5400_S00Z exhibits a typical DC current gain (h_FE) of 40–120, with minimum guaranteed value of 40. This range supports stable biasing in Class-A amplifiers and saturated switches, and is confirmed in the official Fairchild datasheet Rev A for the 2N5400_S00Z.

Does the 2N5400_S00Z require heatsinking in standard PCB layouts?

The 2N5400_S00Z does not require external heatsinking when dissipating ≤300 mW in still air, as its R_θJA = 200°C/W limits junction temperature rise to ~60°C above ambient. For continuous operation near its 625 mW limit, a small copper pour (≥1 cm²) under the collector pad improves thermal conduction and keeps the 2N5400_S00Z within safe operating area.

Can the 2N5400_S00Z be used in audio-frequency amplifier designs?

Yes, the 2N5400_S00Z is suitable for audio-frequency amplification due to its low noise figure (NF = 8.0 dB), f_T > 100 MHz, and stable h_fe response up to 100 kHz. It is commonly deployed in microphone preamps and tone-control stages where discrete BJT characteristics-such as soft clipping and harmonic richness-are intentionally leveraged in the 2N5400_S00Z design.

2N5400_S00Z Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA)

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 600 mA

Voltage - Collector Emitter Breakdown (Max):: 120 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 40 @ 10mA, 5V

Power - Max:: 625 mW

Frequency - Transition:: 100MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

2N5400_S00Z FAQ

1.How can I place an order for 2N5400_S00Z through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5400_S00Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5400_S00Z reliable?

The price and inventory of 2N5400_S00Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5400_S00Z is usually 5 days.

3.What payment methods are accepted for 2N5400_S00Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5400_S00Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5400_S00Z?

2N5400_S00Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5400_S00Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5400_S00Z?

For technical support, including 2N5400_S00Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5400_S00Z requirements.

6.How does Aetrix verify that 2N5400_S00Z is sourced from the original manufacturer or authorized distributors?

All 2N5400_S00Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5400_S00Z meets industry standards.

7.What is the process for return or replacement of 2N5400_S00Z?

All 2N5400_S00Z units undergo pre-shipment inspection (PSI). If there is an issue with 2N5400_S00Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5400_S00Z part is unused and in its original packaging.

Return procedure for 2N5400_S00Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…