NXP Semiconductors 2N5401,116

Overview

2N5401,116 from Nexperia (formerly Philips Semiconductors) is a PNP high-voltage general-purpose transistor in TO-92 (SOT54) package, rated for −150 V V_CEO, −300 mA I_C, and 630 mW P_tot; used in telephony switching, voltage-level translation, and low-speed logic interface circuits.

For engineers reviewing the 2N5401,116 datasheet, 2N5401,116 pinout, 2N5401,116 application, or 2N5401,116 equivalent, key selection criteria include its −150 V collector-emitter breakdown, DC current gain (h_FE) of 60–240 at −10 mA, −500 mV V_CE(sat) at −50 mA/−5 mA drive, 6 pF C_c, and 100–300 MHz f_T.

Technical Context

This PNP bipolar junction transistor operates with reverse-polarity biasing: emitter positive relative to base and collector. It supports linear amplification with h_FE ≥60 at −10 mA and switching operation with V_CE(sat) ≤ −500 mV under −50 mA collector current and −5 mA base drive.

Thermal performance is defined for FR4 PCB mounting (R_th(j-a) = 200 K/W), and device reliability is specified across −65 °C to +150 °C ambient and junction temperature ranges, with maximum storage temperature up to +150 °C.

Key Specifications

Pinout & Package

Package: TO-92 (SOT54, SC-43A), plastic single-ended leaded through-hole package with 3 leads; body length 14.5 mm, lead pitch 2.54 mm, standard for manual prototyping and legacy board assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage transistor applications.

Compared with 2N5401,116, MPSA92 offers double the voltage margin but reduced current gain, making it preferable in surge-prone HV supplies; BC807-40 delivers superior gain and current in SMT form but lacks the −150 V rating required for legacy telecom hardware.

Availability

2N5401,116 is available at Aetrix Electronics and suitable for telephony infrastructure, relay driver modules, discrete logic inverters, and analog sensor signal conditioning requiring stable component supply and long-term obsolescence management.

Supply support for 2N5401,116 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions rooted in Philips' legacy of quality and industrial-grade reliability.

The 2N5401,116 belongs to Nexperia's legacy bipolar transistor product line, engineered for robustness in telephony, industrial control, and analog signal path applications where proven TO-92 reliability and −150 V capability remain essential.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5401,116?

The 2N5401,116 has a maximum collector-emitter voltage (V_CEO) rating of −150 V under open-base conditions. This specification is verified per IEC 60134 Absolute Maximum Ratings and defines the upper limit for safe DC or repetitive peak voltage applied between collector and emitter. Exceeding this value risks irreversible avalanche breakdown. The 2N5401,116 is therefore suitable for −48 V telecom systems and other applications requiring high reverse-voltage tolerance in PNP configurations.

Is the 2N5401,116 pin-compatible with the NPN 2N5551?

No, the 2N5401,116 and 2N5551 are complementary devices-not pin-compatible. Both use TO-92 (SOT54) packages with identical physical pinout (collector-base-emitter), but their polarity differs: 2N5401,116 is PNP (pin 1 = collector, pin 2 = base, pin 3 = emitter), while 2N5551 is NPN (pin 1 = emitter, pin 2 = base, pin 3 = collector). Swapping them without circuit rework will result in non-functional or damaged operation. The 2N5401,116 must be used in circuits designed specifically for PNP biasing and current flow direction.

What is the typical transition frequency (f_T) of the 2N5401,116 and how does it affect circuit design?

The 2N5401,116 has a transition frequency (f_T) ranging from 100 MHz to 300 MHz at V_CE = −10 V and I_C = −10 mA. This indicates the frequency at which current gain drops to unity, setting an upper bound for useful small-signal amplification. For stable amplifier designs, practical bandwidth should remain below ~10% of f_T (i.e., <30 MHz) to maintain adequate gain margin and phase stability. The 2N5401,116 is thus appropriate for audio preamps and low-MHz signal conditioning-but not RF power stages-where the 2N5401,116 delivers predictable gain and low noise.

Can the 2N5401,116 be used in surface-mount designs?

No, the 2N5401,116 is exclusively offered in the through-hole TO-92 (SOT54) package and is not available in surface-mount variants. Its leaded construction requires plated-through holes and wave or hand soldering. For SMT implementations, engineers should consider alternatives like the PNP MMBT5401 (SOT-23) or NSS5401 (SOT-323), which share similar electrical characteristics but differ in package, thermal resistance, and pin assignment. Migration to SMT requires PCB redesign and validation of thermal performance, as the 2N5401,116 itself cannot be mounted on SMT pads.

What is the thermal resistance from junction to ambient (R_th(j-a)) for the 2N5401,116 and how is it measured?

The 2N5401,116 has a thermal resistance from junction to ambient (R_th(j-a)) of 200 K/W, measured with the device mounted on a standard FR4 printed-circuit board per manufacturer test conditions. This value assumes no heatsink and natural convection cooling. It means that for every watt of power dissipated internally, the junction temperature rises 200 °C above ambient. At its rated 630 mW P_tot, this yields a theoretical ΔT of 126 °C-so operation near maximum power requires careful ambient temperature control. Derating is mandatory above 25 °C ambient, and the 2N5401,116 must not exceed 150 °C junction temperature.