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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

NXP Semiconductors 2N5401,412

Name: 2N5401,412
Brand: NXP Semiconductors
SKU: 2N5401,412
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N5401,412

Manufacturer:: NXP Semiconductors

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Datasheet:: 2N5401,412.pdf

Description:: TRANS PNP 150V 0.3A TO-92-3

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Product details

Overview

2N5401,412 from Nexperia (formerly Philips Semiconductors) is a PNP high-voltage general-purpose transistor in TO-92 (SOT54) package, rated for −150 V V_CEO, −300 mA I_C, and 630 mW P_tot; used in telephony switching stages and low-frequency amplification where high breakdown voltage and moderate gain are required.

For engineers reviewing the 2N5401,412 datasheet, 2N5401,412 pinout, 2N5401,412 application, or 2N5401,412 equivalent, key selection criteria include verified PNP polarity, confirmed −150 V collector-emitter blocking capability, validated TO-92 mechanical footprint, and documented h_FE range of 50–240 at −10 mA.

Technical Context

This discrete PNP bipolar junction transistor operates with reverse-polarity biasing: emitter positive relative to base and collector. Its design supports DC switching and linear amplification up to 300 MHz f_T, with low leakage (ICBO ≤ 50 nA at −120 V, 25 °C) and low saturation voltage (V_CEsat ≤ −200 mV at −10 mA/−1 mA).

Thermal performance is defined for FR4 PCB mounting (R_th(j-a) = 200 K/W), and absolute maximum ratings comply with IEC 60134 - including −160 V V_CBO, −5 V V_EBO, and 150 °C T_j.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−150 V: Maximum sustained collector-emitter voltage before breakdown in open-base configuration.
I_C	−300 mA: Continuous DC collector current rating under ambient ≤25 °C.
P_tot	630 mW: Total power dissipation limit on FR4 board; derates linearly above 25 °C ambient.
h_FE	50–240: DC current gain range across −1 mA to −50 mA collector current at V_CE = −5 V.
f_T	100–300 MHz: Transition frequency at V_CE = −10 V, I_C = −10 mA - confirms usable RF amplification up to ~100 MHz.
V_CEsat	≤ −500 mV: Collector-emitter saturation voltage at −50 mA/−5 mA drive - ensures low conduction loss in switching mode.

Pinout & Package

Package: TO-92 (SOT54 / SC-43A), plastic single-ended leaded through-hole package with 3 leads; body length 14.5 mm, lead pitch 2.54 mm, standard for manual prototyping and low-density PCBs.

Pin/Terminal	Circuit Role	Design Meaning
1	Collector	Main current sink terminal; connected to most negative potential in PNP operation.
2	Base	Control electrode; forward-biased with respect to emitter to enable conduction.
3	Emitter	Current source terminal; typically tied to circuit ground or positive rail in common-emitter configurations.

Key Features

Feature	Design Value
High V_CEO rating	−150 V enables use in telephone line interface circuits with ringing voltage transients.
Low ICBO leakage	≤50 nA at −120 V ensures stable biasing in high-impedance amplifier input stages.
Validated thermal resistance	R_th(j-a) = 200 K/W on FR4 allows accurate junction temperature estimation in layout-constrained designs.
Complementary pairing	NPN counterpart 2N5551 provides matched gain and voltage specs for push-pull or differential pair designs.

Applications

Telephone Line Interface	Low-Voltage Switching Power Supply
Use Scenario: Isolating and switching 48 V DC battery feed and 90 V AC ringing signals in analog telephony line cards. IC Role / Device Role / Timing Role: PNP switch controlling current path between tip/ring and hybrid transformer primary. Use Value: −150 V V_CEO withstands peak ringing voltage without breakdown; low V_CEsat minimizes power loss during on-state.	Use Scenario: Driving gate of N-channel MOSFET in offline flyback controller feedback loop. IC Role / Device Role / Timing Role: Level-shifting and inverting signal from optocoupler output to MOSFET gate. Use Value: Confirmed h_FE ≥ 60 at −10 mA ensures reliable saturation with minimal base drive current.
Audio Pre-amplifier Stage	Industrial Relay Driver
Use Scenario: Low-noise voltage amplification in microphone preamp input stage operating from ±12 V rails. IC Role / Device Role / Timing Role: Common-emitter small-signal amplifier with emitter degeneration resistor. Use Value: Noise figure ≤ 8 dB at 200 µA supports acceptable SNR in audio-band amplification.	Use Scenario: Direct-driving 12 V/40 mA coil of industrial control relay from microcontroller GPIO. IC Role / Device Role / Timing Role: Saturated switch interfacing logic-level output to inductive load. Use Value: −600 mA I_CM peak rating accommodates relay turn-on surge without secondary breakdown.

Telephone Line Interface

Low-Voltage Switching Power Supply

Use Scenario: Isolating and switching 48 V DC battery feed and 90 V AC ringing signals in analog telephony line cards.

IC Role / Device Role / Timing Role: PNP switch controlling current path between tip/ring and hybrid transformer primary.

Use Value: −150 V V_CEO withstands peak ringing voltage without breakdown; low V_CEsat minimizes power loss during on-state.

Use Scenario: Driving gate of N-channel MOSFET in offline flyback controller feedback loop.

IC Role / Device Role / Timing Role: Level-shifting and inverting signal from optocoupler output to MOSFET gate.

Use Value: Confirmed h_FE ≥ 60 at −10 mA ensures reliable saturation with minimal base drive current.

Audio Pre-amplifier Stage

Industrial Relay Driver

Use Scenario: Low-noise voltage amplification in microphone preamp input stage operating from ±12 V rails.

IC Role / Device Role / Timing Role: Common-emitter small-signal amplifier with emitter degeneration resistor.

Use Value: Noise figure ≤ 8 dB at 200 µA supports acceptable SNR in audio-band amplification.

Use Scenario: Direct-driving 12 V/40 mA coil of industrial control relay from microcontroller GPIO.

IC Role / Device Role / Timing Role: Saturated switch interfacing logic-level output to inductive load.

Use Value: −600 mA I_CM peak rating accommodates relay turn-on surge without secondary breakdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MPSA92	Higher V_CEO (−300 V), lower h_FE (min. 25), same TO-92 package.	Better suited for higher-voltage transient suppression; less gain margin in linear amplification.	Select when >−150 V blocking is required and gain can be compensated externally.
BC557B	Lower V_CEO (−45 V), higher h_FE (120–240), same TO-92 package.	Optimized for low-voltage logic-level switching; unsuitable for telephony line voltages.	Choose only for sub-30 V systems where high gain and low base drive are prioritized.

Compared with MPSA92 and BC557B, the 2N5401,412 uniquely balances −150 V blocking, moderate gain (50–240), and proven reliability in telephony infrastructure - making it optimal for legacy line card redesigns requiring drop-in compatibility and known thermal behavior on FR4.

Availability

2N5401,412 is available at Aetrix Electronics and suitable for telephone line interface, relay driver, and low-frequency amplifier applications requiring stable component supply, long-lifecycle support, and traceable sourcing from qualified manufacturing lots.

Supply support for 2N5401,412 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions - spun off from Philips Semiconductors in 2017.

The 2N5401,412 belongs to Nexperia's legacy general-purpose bipolar transistor family, designed specifically for robustness in analog switching and amplification across telecom, industrial control, and consumer electronics.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5401,412?

The 2N5401,412 has a maximum collector-emitter voltage (V_CEO) rating of −150 V under open-base conditions. This value is specified per IEC 60134 Absolute Maximum Ratings and reflects the device's ability to block reverse voltage in PNP configuration without breakdown. Operation beyond this limit risks permanent damage.

Is the 2N5401,412 pin-compatible with the 2N5551?

No - the 2N5401,412 is a PNP transistor while the 2N5551 is its NPN complement; they share identical TO-92 package dimensions and pinout order (collector-base-emitter), but polarity reversal means direct substitution requires circuit topology changes. The 2N5401,412 pinout is collector (pin 1), base (pin 2), emitter (pin 3).

What is the typical DC current gain (h_FE) of the 2N5401,412 at −10 mA collector current?

At V_CE = −5 V and I_C = −10 mA, the 2N5401,412 exhibits a typical h_FE of 60–240, with minimum guaranteed value of 60. This gain range supports reliable saturation in switching applications and sufficient linearity for low-distortion amplification in the audio band.

Can the 2N5401,412 be used in surface-mount designs?

No - the 2N5401,412 is packaged exclusively in TO-92 (SOT54), a through-hole plastic package. It lacks surface-mount variants. For SMT implementation, consider functionally similar devices like the PZT3906 (SOT-23) or MMBT3906 (SOT-23), though voltage and gain specs differ and require validation.

What is the thermal resistance from junction to ambient for the 2N5401,412?

The 2N5401,412 has a thermal resistance from junction to ambient (R_th(j-a)) of 200 K/W when mounted on a standard FR4 printed-circuit board with no heatsink. This value assumes natural convection cooling and defines the baseline for calculating junction temperature rise under given power dissipation conditions.

2N5401,412 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 300 mA

Voltage - Collector Emitter Breakdown (Max):: 150 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 10mA, 5V

Power - Max:: 630 mW

Frequency - Transition:: 300MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

2N5401,412 FAQ

1.How can I place an order for 2N5401,412 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5401,412 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5401,412 reliable?

The price and inventory of 2N5401,412 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5401,412 is usually 5 days.

3.What payment methods are accepted for 2N5401,412?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5401,412 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5401,412?

2N5401,412 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5401,412 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5401,412?

For technical support, including 2N5401,412 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5401,412 requirements.

6.How does Aetrix verify that 2N5401,412 is sourced from the original manufacturer or authorized distributors?

All 2N5401,412 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5401,412 meets industry standards.

7.What is the process for return or replacement of 2N5401,412?

All 2N5401,412 units undergo pre-shipment inspection (PSI). If there is an issue with 2N5401,412, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5401,412 part is unused and in its original packaging.

Return procedure for 2N5401,412:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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