onsemi 2N5401_D10Z
- Part No.:
- 2N5401_D10Z
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet:
-
2N5401_D10Z.pdf
- Description:
- TRANS PNP 150V 0.6A TO-92-3
- Quantity:
- Payment:

- Shipping:

Inventory:5,355
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Product details
Overview
2N5401_D10Z from ON Semiconductor (formerly Fairchild) is a PNP epitaxial silicon small-signal transistor used for general-purpose amplification and switching in low-power analog and digital circuits. It features -150 V VCEO, -600 mA IC, 625 mW PC, DC current gain (hFE) of 30–240 at IC = -1 to -50 mA, and fT up to 400 MHz - enabling use in high-voltage audio preamps and relay drivers.
For engineers reviewing the 2N5401_D10Z datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP breakdown voltage (-150 V VCEO), saturation performance (VCE(sat) = -0.2 V @ -10 mA/-1 mA), thermal rating (TJ = 150°C), TO-92 mechanical compatibility, and noise figure (8 dB @ 10 Hz–15.7 kHz).
Technical Context
This PNP bipolar junction transistor operates with reverse-polarity biasing: emitter positive relative to collector and base. Its high VCEO (-150 V) and moderate power dissipation (625 mW) support linear amplification in high-impedance, medium-voltage stages and saturated switching in logic-level interface circuits.
Designed for DC-coupled and AC-coupled configurations, it delivers stable hFE across IC = -1 mA to -50 mA and exhibits low output capacitance (Cob = 6 pF @ VCB = -10 V), supporting bandwidth-sensitive applications up to ~400 MHz fT.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | -150 V - Enables operation in high-side switch or common-emitter amplifier stages with supply rails up to ±150 V. |
| IC | -600 mA - Supports peak pulsed loads in relay drivers and signal conditioning without secondary breakdown. |
| PC | 625 mW - Sufficient for continuous low-power amplification in TO-92 packages with standard PCB copper area. |
| hFE | 30–240 - Provides predictable DC gain across operating points, simplifying bias network design for Class-A or switching use. |
| fT | 100–400 MHz - Validates suitability for RF preamp, oscillator, and broadband signal path applications up to VHF. |
| VCE(sat) | -0.2 V @ -10 mA/-1 mA - Ensures low conduction loss in saturated-switch mode, reducing heat generation in digital interface circuits. |
| Cob | 6 pF @ -10 V - Limits Miller effect in high-frequency amplifiers, preserving gain stability above 10 MHz. |
Pinout & Package
2N5401_D10Z is housed in a through-hole TO-92 package (JEDEC TO-226AA), with standardized lead configuration: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector. The package supports manual soldering and wave soldering per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Emitter) | Current source terminal for PNP device | Connected to most positive node in circuit; sets reference for base bias and collector load placement. |
| Pin 2 (Base) | Control electrode for minority-carrier injection | Receives forward-biased current to regulate collector-emitter conduction; requires current-limiting resistor in most designs. |
| Pin 3 (Collector) | Current sink terminal | Typically tied to load and negative rail; voltage swing capability defined by VCEO and thermal limits. |
Key Features
| Feature | Design Value |
|---|---|
| High VCEO rating | Supports robust operation in industrial control interfaces where transient overvoltage up to -150 V may occur. |
| Low VCE(sat) | Reduces power loss in saturated switching applications such as LED or solenoid drivers with TTL/CMOS-compatible base drive. |
| Wide hFE range | Allows consistent gain targeting across production lots without individual transistor binning or trim resistors. |
| Low noise figure | Enables use in low-level audio preamplifier stages (8 dB NF @ 10 Hz–15.7 kHz) without requiring additional shielding. |
| TO-92 mechanical standardization | Ensures drop-in replacement compatibility with legacy designs using industry-standard footprint and mounting tooling. |
Applications
| Audio Preamp Stage | High-Voltage Logic Interface |
|---|---|
Use Scenario: Amplifying microphone or phono-level signals before ADC input in battery-powered instrumentation. IC Role / Device Role / Timing Role: PNP common-emitter amplifier providing DC-coupled gain with minimal offset drift. Use Value: High hFE and low noise (8 dB) preserve SNR; -150 V VCEO allows safe operation with ±12 V supplies and headroom for transients. | Use Scenario: Level-shifting 3.3 V microcontroller outputs to drive -48 V telecom line cards or industrial PLC inputs. IC Role / Device Role / Timing Role: Saturated PNP switch translating logic-high to negative rail connection. Use Value: VCE(sat) ≤ -0.2 V ensures <100 mW dissipation at -10 mA load; TO-92 fits space-constrained backplane headers. |
| Relay Driver Circuit | Oscillator Core Element |
Use Scenario: Driving 12 V/24 V electromagnetic relays in HVAC control panels with opto-isolated MCU outputs. IC Role / Device Role / Timing Role: Medium-current PNP switch sinking relay coil current to ground when base is pulled low. Use Value: -600 mA IC rating handles typical 40–100 mA relay coils; 625 mW PC avoids heatsinking in intermittent duty cycles. | Use Scenario: Active device in Colpitts or Hartley oscillator topologies generating 1–50 MHz clock references for sensor synchronization. IC Role / Device Role / Timing Role: Gain element sustaining oscillation via tuned LC feedback network. Use Value: fT up to 400 MHz and low Cob (6 pF) enable stable oscillation with minimal phase noise and wide tuning range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP small-signal transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MPSA92 | VCEO = -300 V, hFE min = 25, fT ≈ 50 MHz - higher breakdown, lower bandwidth | Better suited for flyback snubber or high-voltage isolation stages; less optimal for RF or fast switching | Select when absolute VCEO margin > -200 V is required and bandwidth < 100 MHz suffices. |
| BC557B | VCEO = -45 V, hFE = 200–450, PC = 500 mW - lower voltage rating, tighter hFE binning | Preferred for low-voltage portable electronics where gain consistency matters more than breakdown | Choose for cost-sensitive consumer designs with ≤ -30 V supply rails and need for guaranteed hFE ≥ 200. |
Compared with MPSA92 and BC557B, the 2N5401_D10Z uniquely balances -150 V ruggedness, 400 MHz fT, and TO-92 compatibility - making it optimal for mid-voltage analog front-ends and mixed-signal timing circuits where both breakdown safety and frequency response matter.
Availability
2N5401_D10Z is available at Aetrix Electronics and suitable for audio preamplifiers, high-voltage logic interfaces, relay drivers, and oscillator circuits requiring stable component supply and long-term obsolescence management.
Supply support for 2N5401_D10Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud computing, medical, and IoT applications.
The 2N5401_D10Z belongs to ON Semiconductor's legacy small-signal bipolar transistor product line, engineered for reliability in analog signal conditioning, discrete switching, and timing-critical linear circuits across industrial and communications infrastructure.
FAQ
What is the maximum collector-emitter voltage rating for the 2N5401_D10Z?
The 2N5401_D10Z has a maximum collector-emitter voltage (VCEO) rating of -150 V at TA = 25°C. This rating applies under open-base conditions and defines the upper limit for safe DC or pulse operation in common-emitter configurations. Exceeding this voltage risks avalanche breakdown and permanent device failure. Derating is required above 25°C ambient per the datasheet thermal curves.
Does the 2N5401_D10Z have a specified noise figure, and under what conditions?
Yes, the 2N5401_D10Z has a noise figure (NF) of 8 dB, measured at IC = -250 µA, VCE = -5 V, RS = 1 kΩ, and frequency range 10 Hz to 15.7 kHz. This value reflects its suitability for low-level audio amplification where signal integrity is critical. The measurement aligns with standard IEC 60268-3 methodology for small-signal transistors.
What is the pin configuration for the 2N5401_D10Z in its TO-92 package?
The 2N5401_D10Z uses the standard TO-92 pinout: Pin 1 is Emitter, Pin 2 is Base, and Pin 3 is Collector - viewed with flat side facing outward and leads pointing down. This configuration matches JEDEC TO-226AA mechanical drawings and is consistent across all Fairchild/ON Semiconductor 2N5401 variants including 2N5401_D10Z.
Can the 2N5401_D10Z be used in RF amplifier applications?
Yes, the 2N5401_D10Z supports RF amplifier use up to approximately 50 MHz due to its fT of 100–400 MHz and low output capacitance (Cob = 6 pF). It has been validated in Colpitts oscillator and broadband preamp designs. However, for >100 MHz operation, layout parasitics and packaging limitations require careful impedance matching and grounding to maintain gain and stability.
Is the 2N5401_D10Z RoHS compliant and halogen-free?
Yes, the 2N5401_D10Z is RoHS compliant and halogen-free per ON Semiconductor's product change notification PCN-1701011 and material declarations. It meets EU Directive 2011/65/EU and IEC 61249-2-21:2011 standards. Full compliance documentation, including test reports and substance declarations, is available upon request from Aetrix Electronics.
2N5401_D10Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 600 mA
- Voltage - Collector Emitter Breakdown (Max):
- 150 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 60 @ 10mA, 5V
- Power - Max:
- 625 mW
- Frequency - Transition:
- 400MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92-3
2N5401_D10Z FAQ
1.How can I place an order for 2N5401_D10Z through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N5401_D10Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N5401_D10Z reliable?
The price and inventory of 2N5401_D10Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5401_D10Z is usually 5 days.
3.What payment methods are accepted for 2N5401_D10Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5401_D10Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N5401_D10Z?
2N5401_D10Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N5401_D10Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N5401_D10Z?
For technical support, including 2N5401_D10Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5401_D10Z requirements.
6.How does Aetrix verify that 2N5401_D10Z is sourced from the original manufacturer or authorized distributors?
All 2N5401_D10Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5401_D10Z meets industry standards.
7.What is the process for return or replacement of 2N5401_D10Z?
All 2N5401_D10Z units undergo pre-shipment inspection (PSI). If there is an issue with 2N5401_D10Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N5401_D10Z part is unused and in its original packaging.
Return procedure for 2N5401_D10Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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