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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N5401_D81Z

Name: 2N5401_D81Z
Brand: onsemi
SKU: 2N5401_D81Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N5401_D81Z

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Datasheet:: 2N5401_D81Z.pdf

Description:: TRANS PNP 150V 0.6A TO-92-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2N5401_D81Z from Fairchild Semiconductor is a PNP epitaxial silicon small-signal transistor rated for -150 V V_CEO, -600 mA I_C, 625 mW P_C, with h_FE = 30–240 at I_C = -1 to -50 mA, and f_T = 100–400 MHz - used in high-voltage amplifier and switching stages of discrete analog power supplies and signal conditioning circuits.

For engineers reviewing the 2N5401_D81Z datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP breakdown voltage margin (-150 V V_CEO), low saturation voltage (-0.2 V at I_C = -10 mA/I_B = -1 mA), noise figure (8 dB at 10 Hz–15.7 kHz), TO-92 mechanical compatibility, and junction temperature rating (150 °C).

Technical Context

This PNP bipolar junction transistor operates in active, saturation, and cutoff regions with defined DC current gain across three collector current levels (-1 mA, -10 mA, -50 mA) at fixed V_CE = -5 V. Its f_T specification supports RF amplification up to 400 MHz under specified bias conditions.

Breakdown voltages are characterized with tightly controlled test conditions: BVCBO at I_C = -100 µA, BVCEO at I_C = -1 mA, and BVEBO at I_E = -10 µA - confirming robustness against reverse-biased junction stress in high-impedance bias networks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	-150 V - maximum safe collector-emitter voltage before avalanche conduction in common-emitter configuration
I_C	-600 mA - continuous DC collector current limit defining linear/saturation operating envelope
P_C	625 mW - thermal power dissipation limit at T_A = 25 °C requiring heatsinking above ambient derating
h_FE	30–240 - DC current gain range enabling predictable base drive sizing across operating currents
f_T	100–400 MHz - usable small-signal bandwidth for RF preamp or oscillator buffer stages
V_CE(sat)	-0.2 V (I_C = -10 mA, I_B = -1 mA) - low on-state loss critical for efficient switching in discrete logic interfaces
NF	8 dB (I_C = -250 µA, R_S = 1 kΩ, 10 Hz–15.7 kHz) - quantified audio-band noise performance for low-level signal amplification

Pinout & Package

2N5401_D81Z is housed in a standard TO-92 plastic package with lead configuration: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector - fully compatible with legacy through-hole PCB footprints and manual assembly processes.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Emitter	Current sink terminal; connects to most negative node in PNP common-emitter or common-base topologies
Pin 2	Base	Control input; requires current-limited drive to achieve target h_FE-dependent collector current
Pin 3	Collector	High-voltage output node; supports up to -150 V relative to emitter in active region

Key Features

Feature	Design Value
High V_CEO rating	Supports operation in 100–150 V rail applications such as CRT deflection, relay drivers, and HV bias supplies
Low V_CE(sat)	Reduces conduction loss in saturated-switching configurations, improving efficiency in discrete logic level translators
Wide h_FE range	Enables consistent gain staging across production lots without binning when biased at I_C = -10 mA
Specified f_T	Validates usability in VHF oscillator tanks and broadband RF amplifiers up to 400 MHz under defined test conditions
TO-92 mechanical standardization	Ensures drop-in replacement capability with other JEDEC TO-92 PNP transistors in existing layouts

Applications

Audio Pre-amplifier Stage	High-Voltage Switch Driver
Use Scenario: Low-noise voltage amplification of microphone or phono signals prior to ADC sampling. IC Role / Device Role / Timing Role: PNP small-signal amplifier configured in common-emitter topology with emitter degeneration. Use Value: 8 dB noise figure and h_FE ≥ 60 at I_C = -1 mA ensure high SNR and stable gain without feedback instability.	Use Scenario: Driving electromagnetic relays or solenoids powered from 48–120 V DC rails. IC Role / Device Role / Timing Role: Saturated PNP switch controlling load current path between HV rail and ground. Use Value: -150 V V_CEO and -0.2 V V_CE(sat) enable reliable switching with <100 mW conduction loss at 100 mA load.
Discrete Logic Level Translator	Linear Regulator Pass Element
Use Scenario: Converting TTL/CMOS logic outputs to interface with -12 V or -15 V analog subsystems. IC Role / Device Role / Timing Role: Inverter stage using emitter-follower or common-emitter configuration with pull-up resistor. Use Value: Fast turn-off due to low Cob (6 pF) and adequate f_T support clean edge transitions up to 10 MHz.	Use Scenario: Series pass element in adjustable negative linear regulators delivering up to -100 mA output. IC Role / Device Role / Timing Role: Voltage-controlled current source operating in active region with feedback loop compensation. Use Value: 150 °C T_J rating and 625 mW P_C allow thermally stable operation at -50 mA/10 V dropout with minimal heatsink.

Audio Pre-amplifier Stage

High-Voltage Switch Driver

Use Scenario: Low-noise voltage amplification of microphone or phono signals prior to ADC sampling.

IC Role / Device Role / Timing Role: PNP small-signal amplifier configured in common-emitter topology with emitter degeneration.

Use Value: 8 dB noise figure and h_FE ≥ 60 at I_C = -1 mA ensure high SNR and stable gain without feedback instability.

Use Scenario: Driving electromagnetic relays or solenoids powered from 48–120 V DC rails.

IC Role / Device Role / Timing Role: Saturated PNP switch controlling load current path between HV rail and ground.

Use Value: -150 V V_CEO and -0.2 V V_CE(sat) enable reliable switching with <100 mW conduction loss at 100 mA load.

Discrete Logic Level Translator

Linear Regulator Pass Element

Use Scenario: Converting TTL/CMOS logic outputs to interface with -12 V or -15 V analog subsystems.

IC Role / Device Role / Timing Role: Inverter stage using emitter-follower or common-emitter configuration with pull-up resistor.

Use Value: Fast turn-off due to low Cob (6 pF) and adequate f_T support clean edge transitions up to 10 MHz.

Use Scenario: Series pass element in adjustable negative linear regulators delivering up to -100 mA output.

IC Role / Device Role / Timing Role: Voltage-controlled current source operating in active region with feedback loop compensation.

Use Value: 150 °C T_J rating and 625 mW P_C allow thermally stable operation at -50 mA/10 V dropout with minimal heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MPSA92	V_CEO = -300 V, h_FE = 25–100, TO-92, same pinout (E-B-C)	Higher breakdown enables use in >200 V flyback snubbers or photomultiplier bases	Select when absolute V_CEO margin >200 V is required; verify h_FE spread impact on bias stability
BC557B	V_CEO = -45 V, h_FE = 200–450, TO-92, pinout E-B-C	Lower voltage rating but higher gain uniformity suits precision bias networks below 30 V	Choose for low-voltage, high-gain analog stages where V_CEO < 50 V suffices and tighter h_FE tolerance is needed

Compared with MPSA92 and BC557B, the 2N5401_D81Z offers balanced trade-offs: sufficient -150 V rating for industrial control interfaces, moderate h_FE variation acceptable for non-critical gain stages, and proven thermal reliability in TO-92 at 625 mW - making it optimal for cost-sensitive, medium-voltage discrete designs.

Availability

2N5401_D81Z is available at Aetrix Electronics and suitable for audio pre-amplifiers, high-voltage switch drivers, discrete logic level translators, linear regulator pass elements, and analog signal conditioning circuits requiring stable component supply and long-term obsolescence management.

Supply support for 2N5401_D81Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.

The 2N5401_D81Z belongs to Fairchild's legacy general-purpose PNP transistor product line, designed for medium-voltage linear amplification and switching in industrial, consumer, and instrumentation equipment.

FAQ

What is the pin configuration of the 2N5401_D81Z?

The 2N5401_D81Z uses a standard TO-92 package with pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector. This matches JEDEC TO-92 mechanical specifications and is identical to the original 2N5401. No adapter or footprint modification is required when replacing legacy units or cross-referencing with MPSA92 or BC557 series devices.

Does the 2N5401_D81Z support RF applications?

Yes, the 2N5401_D81Z has a specified f_T of 100–400 MHz under I_C = -10 mA, V_CE = -10 V, and f = 100 MHz test conditions. It is suitable for VHF oscillator buffers and low-power RF amplifier stages, though layout parasitics and bias stability must be validated per circuit requirements - the 2N5401_D81Z itself does not guarantee system-level RF performance.

What is the maximum power dissipation of the 2N5401_D81Z?

The 2N5401_D81Z has a maximum collector dissipation (P_C) of 625 mW at T_A = 25 °C. Derating is required above ambient temperature - approximately 5 mW/°C above 25 °C - and actual power handling depends on PCB copper area, airflow, and thermal interface. The 2N5401_D81Z junction temperature must remain ≤150 °C for reliable operation.

Is the 2N5401_D81Z RoHS compliant?

The 2N5401_D81Z was manufactured prior to full RoHS enforcement and is classified as a legacy component. While many batches meet Pb-free soldering compatibility, formal RoHS certification documentation is not available. For new designs requiring compliance, consult Aetrix Electronics for qualified alternatives or verify material declarations directly with ON Semiconductor's archived Fairchild product records.

How does the 2N5401_D81Z compare to the NPN 2N5551 in complementary designs?

The 2N5401_D81Z (PNP) and 2N5551 (NPN) share TO-92 packaging and similar voltage/current ratings (V_CEO = -150 V vs. +160 V; I_C = -600 mA vs. +600 mA), enabling complementary pair use in Class-A amplifiers or push-pull output stages. However, their h_FE distributions differ - the 2N5401_D81Z specifies 30–240 while the 2N5551 specifies 80–250 - so matching for symmetry requires binning. The 2N5401_D81Z remains the designated PNP counterpart in legacy schematics.

2N5401_D81Z Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 600 mA

Voltage - Collector Emitter Breakdown (Max):: 150 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 10mA, 5V

Power - Max:: 625 mW

Frequency - Transition:: 400MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

2N5401_D81Z FAQ

1.How can I place an order for 2N5401_D81Z through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5401_D81Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5401_D81Z reliable?

The price and inventory of 2N5401_D81Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5401_D81Z is usually 5 days.

3.What payment methods are accepted for 2N5401_D81Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5401_D81Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5401_D81Z?

2N5401_D81Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5401_D81Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5401_D81Z?

For technical support, including 2N5401_D81Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5401_D81Z requirements.

6.How does Aetrix verify that 2N5401_D81Z is sourced from the original manufacturer or authorized distributors?

All 2N5401_D81Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5401_D81Z meets industry standards.

7.What is the process for return or replacement of 2N5401_D81Z?

All 2N5401_D81Z units undergo pre-shipment inspection (PSI). If there is an issue with 2N5401_D81Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5401_D81Z part is unused and in its original packaging.

Return procedure for 2N5401_D81Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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