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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N5401RL1

Name: 2N5401RL1
Brand: onsemi
SKU: 2N5401RL1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N5401RL1

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body, Formed Leads

Datasheet:: 2N5401RL1.pdf

Description:: TRANS PNP 150V 0.6A TO92

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2N5401RL1 from onsemi is a PNP silicon small-signal amplifier transistor in TO-92 package, rated for V_CEO = 150 V, I_C = 600 mA, and P_D = 625 mW at T_A = 25°C. It delivers h_FE = 50–240 (at I_C = 1–50 mA), f_T = 300 MHz, and V_CE(sat) ≤ 0.5 V, supporting high-voltage switching and linear amplification in discrete analog stages.

For engineers reviewing the 2N5401RL1 datasheet, pinout, applications, or equivalent options, key selection criteria include breakdown voltage margin, DC gain consistency across bias points, thermal resistance (R_JA = 200°C/W), saturation behavior under forced β = 10, and Pb-free tape-and-reel packaging compliance.

Technical Context

The 2N5401RL1 operates as a general-purpose PNP bipolar junction transistor optimized for medium-voltage linear amplification and active-load switching. Its V_CBO = 160 V and V_EBO = 5.0 V define safe reverse-bias limits, while its f_T = 300 MHz and h_fe = 40–200 (at 1 kHz) support audio-frequency and low-MHz small-signal gain applications.

Thermal design relies on R_JC = 83.3°C/W and R_JA = 200°C/W, with maximum junction temperature rated to +150°C. The device exhibits I_CBO ≤ 50 nA at V_CB = 120 V and T_A = 25°C, ensuring low leakage in high-impedance bias networks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	150 Vdc - supports collector supply rails up to 150 V without breakdown in common-emitter configuration
I_C (continuous)	600 mAdc - enables drive capability for medium-current loads such as relay coils or pre-driver stages
h_FE (min–max)	50–240 at I_C = 1–50 mA - provides stable DC biasing across multiple operating points in amplifier designs
f_T	300 MHz - ensures usable small-signal gain up to ~100 MHz in tuned RF or wideband amplifier circuits
V_CE(sat)	≤ 0.5 V at I_C = 50 mA, I_B = 5 mA - minimizes conduction loss and self-heating in saturated-switch applications
R_JA	200°C/W - defines required PCB copper area and airflow for thermal management at full power dissipation

Pinout & Package

2N5401RL1 uses the standard TO-92 package (Case 29-11, Style 1), with lead-to-lead spacing of 2.54 mm and body dimensions 4.45 × 4.32 × 3.18 mm (L × W × H). Pin 1 is Emitter, Pin 2 is Base, Pin 3 is Collector - verified per marking diagram and package outline on page 6 of the official datasheet.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal for PNP operation	Connected to most positive rail in common-base or common-collector configurations; sets reference for base bias network
2 (Base)	Control input for minority-carrier injection	Requires current-limited drive (typically via resistor) to achieve target I_C; sensitive to ESD due to V_EBO = 5.0 V limit
3 (Collector)	Output current source terminal	Handles full load current in switching mode; must be isolated from ground-referenced signals when used in high-side switch topologies

Key Features

Feature	Design Value
Pb-free RoHS-compliant packaging	2N5401RL1G variant available; RL1 suffix indicates tape-and-reel delivery (2000 units) with orientation per BRD8011/D spec
High V_CBO rating	160 Vdc withstand enables use in flyback snubbers and high-side switch nodes where collector swings above supply
Low I_CBO leakage	≤50 nA at 120 V and 25°C ensures stable bias in high-impedance amplifier feedback paths over temperature
Controlled h_FE spread	Min 50 at I_C = 1 mA and min 40 at I_C = 50 mA allows predictable gain staging without binning in production

Applications

Audio Pre-amplifier Stage	High-Voltage Switch Driver
Use Scenario: Low-noise voltage amplification in microphone preamp or tone-control circuitry with ±15 V supplies. IC Role / Device Role / Timing Role: PNP small-signal amplifier in common-emitter configuration with emitter degeneration. Use Value: h_FE ≥ 50 and NF ≤ 8.0 dB at 1 kHz ensure adequate SNR; V_CEO = 150 V allows headroom for transient clipping without breakdown.	Use Scenario: Driving the gate of a high-side N-channel MOSFET in a buck-boost DC-DC controller. IC Role / Device Role / Timing Role: Active pull-up switch in level-shifting interface between logic-level control and floating gate node. Use Value: V_CBO = 160 V withstands bootstrap voltage transients; V_CE(sat) ≤ 0.5 V minimizes gate charging delay and power loss.
Discrete Logic Inverter	Current Mirror Reference
Use Scenario: TTL-compatible inverting buffer stage in industrial control I/O modules. IC Role / Device Role / Timing Role: Saturated PNP switch with fixed base drive, delivering rail-to-rail output swing. Use Value: I_C = 600 mA rating supports 20+ mA fan-out; fast t_f ≤ 70 ns at V_CC = 30 V enables >1 MHz switching in digital logic emulation.	Use Scenario: Precision two-transistor current mirror in analog sensor signal conditioning front-end. IC Role / Device Role / Timing Role: Matched PNP element providing stable reference current independent of supply variation. Use Value: Tight h_FE range (50–240) and low I_CBO enable <1% current mismatch over −55°C to +125°C ambient.

Audio Pre-amplifier Stage

High-Voltage Switch Driver

Use Scenario: Low-noise voltage amplification in microphone preamp or tone-control circuitry with ±15 V supplies.

IC Role / Device Role / Timing Role: PNP small-signal amplifier in common-emitter configuration with emitter degeneration.

Use Value: h_FE ≥ 50 and NF ≤ 8.0 dB at 1 kHz ensure adequate SNR; V_CEO = 150 V allows headroom for transient clipping without breakdown.

Use Scenario: Driving the gate of a high-side N-channel MOSFET in a buck-boost DC-DC controller.

IC Role / Device Role / Timing Role: Active pull-up switch in level-shifting interface between logic-level control and floating gate node.

Use Value: V_CBO = 160 V withstands bootstrap voltage transients; V_CE(sat) ≤ 0.5 V minimizes gate charging delay and power loss.

Discrete Logic Inverter

Current Mirror Reference

Use Scenario: TTL-compatible inverting buffer stage in industrial control I/O modules.

IC Role / Device Role / Timing Role: Saturated PNP switch with fixed base drive, delivering rail-to-rail output swing.

Use Value: I_C = 600 mA rating supports 20+ mA fan-out; fast t_f ≤ 70 ns at V_CC = 30 V enables >1 MHz switching in digital logic emulation.

Use Scenario: Precision two-transistor current mirror in analog sensor signal conditioning front-end.

IC Role / Device Role / Timing Role: Matched PNP element providing stable reference current independent of supply variation.

Use Value: Tight h_FE range (50–240) and low I_CBO enable <1% current mismatch over −55°C to +125°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MPSA92	V_CEO = 300 V, h_FE = 25–250, f_T = 50 MHz, TO-92	Higher breakdown but lower bandwidth; better for HV switching, worse for RF gain	Select when V_CEO > 150 V is mandatory and f_T < 100 MHz suffices
BC557B	V_CEO = 45 V, h_FE = 200–450, f_T = 100 MHz, TO-92	Lower voltage rating but higher gain and tighter h_FE binning; not suitable for >60 V rails	Select for low-voltage, high-gain linear stages where thermal margin is less constrained

Compared with MPSA92 and BC557B, the 2N5401RL1 uniquely balances 150 V breakdown, 300 MHz f_T, and production-ready tape-and-reel packaging - making it optimal for cost-sensitive industrial amplifiers requiring both voltage headroom and bandwidth.

Availability

2N5401RL1 is available at Aetrix Electronics and suitable for industrial motor control interfaces, analog sensor signal conditioning, and legacy telecom line-card amplifiers requiring stable component supply, long-term obsolescence mitigation, and RoHS-compliant tape-and-reel logistics.

Supply support for 2N5401RL1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, and sensing technologies for automotive, industrial, and cloud infrastructure markets.

The 2N5401RL1 belongs to onsemi's legacy discrete transistor portfolio designed for reliability-critical analog and switching functions in industrial control, power supply feedback loops, and legacy equipment repair - emphasizing parametric consistency and long-lifecycle support.

FAQ

What is the maximum continuous collector current for the 2N5401RL1?

The 2N5401RL1 has a maximum continuous collector current (I_C) of 600 mAdc at T_A = 25°C. Derating applies above 25°C at 5.0 mW/°C for ambient-limited operation. At case temperature T_C = 25°C, it supports 1.5 W dissipation, enabling higher current pulses with proper heatsinking. This rating is confirmed in the "Maximum Ratings" table on page 1 of the official datasheet.

Is the 2N5401RL1 pin-compatible with the 2N5400 series?

Yes, the 2N5401RL1 shares identical TO-92 pinout (Emitter-Base-Collector on pins 1-2-3) and mechanical footprint with the 2N5400 series. However, it is not a direct drop-in replacement due to higher V_CEO (150 V vs. 120 V) and V_CBO (160 V vs. 130 V); circuit validation is required if substituting into existing 2N5400 designs to confirm bias stability and thermal margins.

Does the 2N5401RL1 meet RoHS requirements?

Yes, the 2N5401RL1 is manufactured in a Pb-free (RoHS-compliant) version, designated as 2N5401RL1G. The "G" suffix explicitly denotes lead-free construction per onsemi's Pb-Free strategy documentation. The base 2N5401RL1 part may be legacy Pb-containing; always verify the full orderable number and packaging code before procurement.

What is the typical noise figure of the 2N5401RL1?

The 2N5401RL1 has a maximum noise figure (NF) of 8.0 dB at I_C = 250 µA, V_CE = 5.0 V, R_S = 1.0 kΩ, and f = 1.0 kHz, as specified in the "Electrical Characteristics" table on page 2 of the datasheet. This value reflects performance in low-frequency small-signal amplification, not RF or high-speed applications.

Can the 2N5401RL1 be used in switching power supply feedback circuits?

Yes, the 2N5401RL1 is commonly used in optocoupler-based feedback loops of isolated AC-DC converters. Its V_CEO = 150 V withstands reflected flyback spikes, low I_CBO ensures stable reference current, and h_FE ≥ 50 guarantees reliable transistor action at microamp-level photocurrent inputs - all confirmed in the 2N5401RL1's published electrical characteristics.

2N5401RL1 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body, Formed Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 600 mA

Voltage - Collector Emitter Breakdown (Max):: 150 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 10mA, 5V

Power - Max:: 625 mW

Frequency - Transition:: 300MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92 (TO-226)

2N5401RL1 FAQ

1.How can I place an order for 2N5401RL1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5401RL1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5401RL1 reliable?

The price and inventory of 2N5401RL1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5401RL1 is usually 5 days.

3.What payment methods are accepted for 2N5401RL1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5401RL1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5401RL1?

2N5401RL1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5401RL1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5401RL1?

For technical support, including 2N5401RL1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5401RL1 requirements.

6.How does Aetrix verify that 2N5401RL1 is sourced from the original manufacturer or authorized distributors?

All 2N5401RL1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5401RL1 meets industry standards.

7.What is the process for return or replacement of 2N5401RL1?

All 2N5401RL1 units undergo pre-shipment inspection (PSI). If there is an issue with 2N5401RL1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5401RL1 part is unused and in its original packaging.

Return procedure for 2N5401RL1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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