Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N5401RL1G

Name: 2N5401RL1G
Brand: onsemi
SKU: 2N5401RL1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: 2N5401RL1G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body, Formed Leads

Datasheet:: 2N5401RL1G.pdf

Description:: TRANS PNP 150V 0.6A TO92

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,429

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

2N5401RL1G from onsemi is a PNP silicon small-signal transistor designed for general-purpose amplification and switching in low-power analog and digital circuits. It delivers V_CEO = 150 V, I_C = 600 mA, h_FE = 50–240 (at I_C = 1–50 mA), f_T = 300 MHz, and operates across −55°C to +150°C junction temperature.

For engineers reviewing the 2N5401RL1G datasheet, pinout, applications, or equivalent options, key selection criteria include high-voltage PNP capability, TO-92 Pb-free packaging, DC current gain consistency across bias points, thermal robustness at elevated ambient temperatures, and verified switching performance up to 120 V collector swing.

Technical Context

The 2N5401RL1G implements a planar epitaxial PNP structure optimized for stable h_FE over wide current ranges (1 mA to 50 mA) and low V_CE(sat) (≤0.5 V at I_C/I_B = 10). Its 300 MHz f_T supports audio-frequency amplification and medium-speed switching with predictable turn-on/off times under defined test conditions (V_CC = 30–120 V, I_C/I_B = 10).

Thermal design relies on R_JA = 200°C/W (free-air) and R_JC = 83.3°C/W, enabling operation at full 625 mW dissipation only below 25°C ambient-derating linearly by 5.0 mW/°C above that point. The device meets JEDEC TO-92 mechanical standards (Case 29, Style 1) with emitter-base breakdown limited to 5.0 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	150 Vdc - Supports high-side switching and amplifier stages operating up to 150 V supply rails without breakdown.
I_C	600 mAdc continuous - Enables drive of moderate-current loads such as relay coils, LED arrays, or pre-driver stages.
h_FE	50–240 - Provides reliable DC gain across 1–50 mA collector currents, ensuring consistent biasing in linear and saturated operation.
f_T	300 MHz - Validates usable bandwidth for audio amplifiers and sub-MHz digital signal routing with minimal phase shift.
V_CE(sat)	≤0.5 V at I_C = 50 mA, I_B = 5 mA - Minimizes conduction loss and self-heating during switching, improving efficiency in saturated-mode applications.
R_JA	200°C/W - Defines maximum allowable power dissipation in PCB-mounted, free-air conditions; requires heatsinking or layout derating above 25°C ambient.

Pinout & Package

2N5401RL1G uses the industry-standard TO-92 package (Case 29, Style 1), with lead configuration validated per onsemi's marking diagram and package dimensions drawing. Pin 1 is Emitter, Pin 2 is Base, Pin 3 is Collector.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current exit terminal for PNP operation	Connected to most positive rail in common-emitter configurations; defines reference for base bias network.
2 (Base)	Control input for minority-carrier injection	Requires current-limited drive (e.g., via resistor) to achieve target I_C; polarity inverted relative to NPN devices.
3 (Collector)	Current entry terminal and output node	Typically tied to load and supply rail; voltage swing capability up to 150 V enables high-side switch topologies.

Key Features

Feature	Design Value
Pb-free TO-92 packaging	Complies with RoHS Directive 2011/65/EU; eliminates lead contamination risk in assembly and end-of-life handling.
High V_CEO / V_CBO	150 V / 160 V ratings allow use in 100–120 V AC line-derived supplies and industrial control interfaces without external clamping.
Low noise figure	NF ≤ 8.0 dB at I_C = 250 µA - Supports low-noise preamplifier stages in sensor signal conditioning and audio front-ends.
Controlled h_FE spread	Min/max h_FE specified at multiple I_C points (1 mA, 10 mA, 50 mA) - Enables predictable gain stability across operating range.
Validated switching timing	Turn-off time t_f ≤ 700 ns at V_CC = 120 V - Confirmed performance in pulse-width modulated (PWM) drivers and logic-level translators.

Applications

Audio Amplifier Stage	High-Voltage Switch Driver
Use Scenario: Low-noise preamplifier for electret microphone or piezoelectric sensor signals in battery-powered voice recorders. IC Role / Device Role / Timing Role: PNP small-signal amplifier configured in common-emitter topology with emitter degeneration for gain stability. Use Value: 8.0 dB noise figure and 50–240 h_FE ensure clean signal amplification at µA-level bias currents while maintaining headroom up to 150 V supply.	Use Scenario: High-side switch controlling 24–48 V DC solenoid valves in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: Saturated PNP switch with base current limiting, interfacing microcontroller GPIO to inductive load. Use Value: 150 V V_CEO and 0.5 V V_CE(sat) enable safe, low-loss switching at 48 V with fast turn-off (t_f ≤ 700 ns) to suppress back-EMF spikes.
Level Translation Interface	Analog Signal Inverter
Use Scenario: Converting 3.3 V logic outputs to interface with legacy 12 V TTL-compatible inputs in industrial communication gateways. IC Role / Device Role / Timing Role: Digital inverter stage using fixed-base bias to translate logic levels with controlled edge rates. Use Value: 300 MHz f_T ensures sub-microsecond propagation delay; TO-92 footprint allows compact placement near connector interfaces.	Use Scenario: Inverting op-amp input stage in precision instrumentation where dual-supply PNP input transistors improve common-mode rejection. IC Role / Device Role / Timing Role: Complementary PNP active load element in discrete differential pair configurations. Use Value: Matched h_FE and low C_obo (6.0 pF) minimize gain error and phase distortion in feedback networks up to 100 kHz.

Audio Amplifier Stage

High-Voltage Switch Driver

Use Scenario: Low-noise preamplifier for electret microphone or piezoelectric sensor signals in battery-powered voice recorders.

IC Role / Device Role / Timing Role: PNP small-signal amplifier configured in common-emitter topology with emitter degeneration for gain stability.

Use Value: 8.0 dB noise figure and 50–240 h_FE ensure clean signal amplification at µA-level bias currents while maintaining headroom up to 150 V supply.

Use Scenario: High-side switch controlling 24–48 V DC solenoid valves in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: Saturated PNP switch with base current limiting, interfacing microcontroller GPIO to inductive load.

Use Value: 150 V V_CEO and 0.5 V V_CE(sat) enable safe, low-loss switching at 48 V with fast turn-off (t_f ≤ 700 ns) to suppress back-EMF spikes.

Level Translation Interface

Analog Signal Inverter

Use Scenario: Converting 3.3 V logic outputs to interface with legacy 12 V TTL-compatible inputs in industrial communication gateways.

IC Role / Device Role / Timing Role: Digital inverter stage using fixed-base bias to translate logic levels with controlled edge rates.

Use Value: 300 MHz f_T ensures sub-microsecond propagation delay; TO-92 footprint allows compact placement near connector interfaces.

Use Scenario: Inverting op-amp input stage in precision instrumentation where dual-supply PNP input transistors improve common-mode rejection.

IC Role / Device Role / Timing Role: Complementary PNP active load element in discrete differential pair configurations.

Use Value: Matched h_FE and low C_obo (6.0 pF) minimize gain error and phase distortion in feedback networks up to 100 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MPSA92	V_CEO = 300 V, h_FE = 25–200, f_T = 50 MHz - higher voltage rating but lower bandwidth and wider gain spread.	Better suited for ultra-high-voltage flyback snubbers or relay drivers >200 V; less optimal for audio or fast-switching roles.	Select MPSA92 when absolute breakdown margin exceeds 150 V and bandwidth requirements are <100 MHz.
BC557B	V_CEO = 45 V, h_FE = 200–450, f_T = 100 MHz - lower voltage, tighter h_FE binning, reduced f_T.	Preferred for low-voltage portable electronics (≤5 V systems); unsuitable for 24–120 V industrial rails.	Choose BC557B for cost-sensitive consumer designs with strict gain matching and supply voltages ≤45 V.

Compared with MPSA92 and BC557B, the 2N5401RL1G uniquely balances 150 V breakdown, 300 MHz bandwidth, and production-grade h_FE consistency-making it the preferred choice for mid-voltage industrial amplifiers and switching nodes where both ruggedness and speed matter.

Availability

2N5401RL1G is available at Aetrix Electronics and suitable for industrial control systems, audio signal conditioning circuits, and high-side DC switching applications requiring stable component supply, RoHS-compliant packaging, and proven thermal performance across extended temperature ranges.

Supply support for 2N5401RL1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, cloud, and IoT markets.

The 2N5401RL1G belongs to onsemi's legacy small-signal transistor family, engineered for reliability in general-purpose amplification and switching across harsh industrial environments and long-lifecycle equipment.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5401RL1G?

The 2N5401RL1G has a guaranteed minimum V_CEO rating of 150 Vdc, verified per onsemi's DC characterization at I_C = 1.0 mA and I_B = 0. This rating applies under steady-state DC conditions and defines the absolute upper limit before avalanche breakdown occurs in common-emitter configuration. Exceeding this voltage risks irreversible device failure.

Does the 2N5401RL1G support Pb-free soldering processes?

Yes, the 2N5401RL1G is explicitly marked as Pb-free in onsemi's ordering information and conforms to JEDEC J-STD-020 moisture sensitivity level (MSL) 1. Its TO-92 package is qualified for standard reflow profiles including peak temperatures up to 260°C, and the device complies with RoHS Directive 2011/65/EU without exemption.

What is the typical DC current gain (h_FE) of the 2N5401RL1G at 10 mA collector current?

At I_C = 10 mA and V_CE = 5.0 Vdc, the 2N5401RL1G exhibits h_FE ranging from 60 (minimum) to 240 (maximum), as specified in the "ON CHARACTERISTICS" table of the official datasheet. This wide but bounded range reflects production binning and supports robust circuit design with margin for parameter variation.

Can the 2N5401RL1G be used in audio amplifier designs?

Yes, the 2N5401RL1G is suitable for audio amplifier stages due to its 8.0 dB noise figure at I_C = 250 µA, 300 MHz f_T, and stable h_FE across bias currents. It has been validated in low-noise preamplifier configurations and complements NPN counterparts like 2N5551 in complementary Class-A or AB output stages.

What is the thermal resistance from junction to ambient (R_JA) for the 2N5401RL1G in free-air conditions?

The 2N5401RL1G has a maximum R_JA of 200°C/W when mounted on a standard FR-4 PCB with no copper pour or heatsink, per onsemi's thermal characteristics table. This value assumes natural convection cooling and defines the worst-case temperature rise per milliwatt of dissipated power at 25°C ambient.

2N5401RL1G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body, Formed Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 600 mA

Voltage - Collector Emitter Breakdown (Max):: 150 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 10mA, 5V

Power - Max:: 625 mW

Frequency - Transition:: 300MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92 (TO-226)

2N5401RL1G FAQ

1.How can I place an order for 2N5401RL1G through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5401RL1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5401RL1G reliable?

The price and inventory of 2N5401RL1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5401RL1G is usually 5 days.

3.What payment methods are accepted for 2N5401RL1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5401RL1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5401RL1G?

2N5401RL1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5401RL1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5401RL1G?

For technical support, including 2N5401RL1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5401RL1G requirements.

6.How does Aetrix verify that 2N5401RL1G is sourced from the original manufacturer or authorized distributors?

All 2N5401RL1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5401RL1G meets industry standards.

7.What is the process for return or replacement of 2N5401RL1G?

All 2N5401RL1G units undergo pre-shipment inspection (PSI). If there is an issue with 2N5401RL1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5401RL1G part is unused and in its original packaging.

Return procedure for 2N5401RL1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…