onsemi 2N5401RLRA

Overview

2N5401RLRA from onsemi is a PNP silicon small-signal amplifier transistor in TO-92 package, rated for V_CEO = 150 V, I_C = 600 mA, and P_D = 625 mW at T_A = 25°C. It delivers h_FE = 50–240 (at I_C = 1–50 mA), f_T = 300 MHz, and V_CE(sat) ≤ 0.5 V, supporting high-voltage switching and linear amplification in discrete analog stages.

For engineers reviewing the 2N5401RLRA datasheet, pinout, applications, or equivalent options, key selection criteria include its 150 V V_CEO, 300 MHz f_T, TO-92 leaded package compatibility, low noise (NF ≤ 8.0 dB), and Pb-free tape-and-reel packaging (2000 units/reel) for automated assembly.

Technical Context

The 2N5401RLRA operates as a general-purpose PNP bipolar junction transistor optimized for medium-voltage, medium-current linear amplification and active switching. Its V_CBO = 160 V and V_EBO = 5.0 V support robust biasing in high-side configurations, while R_JA = 200°C/W and R_JC = 83.3°C/W define thermal limits under ambient- or case-mounted conditions.

Electrical behavior is characterized by h_fe = 40–200 (at 1 mA, 10 V), C_obo = 6.0 pF, and switching times (t_d, t_r, t_s, t_f) validated at V_CC = 30–120 V with I_C/I_B = 10 - confirming suitability for pulse amplification and relay drivers where voltage headroom and gain stability are critical.

Key Specifications

Pinout & Package

2N5401RLRA uses the industry-standard TO-92 package (Case 29-11), with 3 leads molded in epoxy and Pb-free finish. Pin 1 is Emitter, Pin 2 is Base, Pin 3 is Collector - verified per onsemi marking diagram and package dimensions drawing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP amplifier transistor applications.

Compared with MPSA92 and BC557B, the 2N5401RLRA uniquely balances 150 V capability, 300 MHz bandwidth, and production-ready tape-and-reel packaging - making it optimal for cost-sensitive industrial controls requiring both voltage headroom and signal fidelity.

Availability

2N5401RLRA is available at Aetrix Electronics and suitable for high-voltage switching, discrete audio amplification, linear regulator pass elements, and level-shifting interfaces requiring stable component supply and RoHS-compliant manufacturing.

Supply support for 2N5401RLRA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The 2N5401RLRA belongs to onsemi's legacy discrete transistor product line, designed specifically for robust, cost-effective PNP amplification and switching in industrial control, power supply, and instrumentation applications.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5401RLRA?

The 2N5401RLRA has a guaranteed minimum V_CEO rating of 150 Vdc at I_C = 1.0 mAdc and I_B = 0. This rating is validated per onsemi's December 2005 datasheet and applies to continuous DC operation within the specified junction temperature range. Exceeding this voltage risks avalanche breakdown and permanent device failure.

Is the 2N5401RLRA RoHS-compliant and lead-free?

Yes, the 2N5401RLRA is a Pb-free device, as confirmed by onsemi's ordering information and marking diagram. The "G" suffix variants (e.g., 2N5401RLRAG) explicitly denote Pb-free packaging, and the RLRA variant is shipped in tape-and-reel format compliant with JEDEC J-STD-020 moisture sensitivity level 1 standards.

What is the DC current gain (h_FE) range for the 2N5401RLRA at typical operating conditions?

The 2N5401RLRA exhibits h_FE = 50–240 at I_C = 50 mA and V_CE = 5.0 Vdc, with minimum values of 40 at I_C = 10 mA and 50 at I_C = 1.0 mA. These values are measured at T_A = 25°C and reflect production-tested distribution - design margins should account for ±20% variation across temperature and unit-to-unit spread.

Can the 2N5401RLRA be used as a direct replacement for the 2N5400 in existing designs?

The 2N5401RLRA can replace the 2N5400 in most designs where higher voltage capability is beneficial, as it shares identical TO-92 packaging, pinout, and thermal characteristics but offers +30 V higher V_CEO (150 V vs. 120 V) and +100 MHz higher f_T (300 MHz vs. 200 MHz). No PCB changes are required, though bias networks may need verification for gain shift.

What is the thermal resistance from junction to ambient (R_JA) for the 2N5401RLRA in standard PCB mounting?

The 2N5401RLRA has a specified R_JA of 200°C/W when mounted on a standard FR-4 PCB with minimal copper area, per onsemi's thermal characterization. This value assumes no heatsink and natural convection cooling; adding 1 cm² of 2-oz copper pour reduces R_JA by ~30°C/W, enabling higher continuous power dissipation.