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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N5401RLRAG

Name: 2N5401RLRAG
Brand: onsemi
SKU: 2N5401RLRAG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N5401RLRAG

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body, Formed Leads

Datasheet:: 2N5401RLRAG.pdf

Description:: TRANS PNP 150V 0.6A TO92

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2N5401RLRAG from onsemi is a PNP silicon small-signal amplifier transistor in TO-92 package, rated for V_CEO = 150 V, I_C = 600 mA, and P_D = 625 mW at T_A = 25°C. It delivers h_FE = 50–240 (at I_C = 1–50 mA), f_T = 100–300 MHz, and V_CE(sat) ≤ 0.5 V (I_C/I_B = 10), commonly used in high-voltage linear amplification and switching stages of analog signal chains.

For engineers reviewing the 2N5401RLRAG datasheet, pinout, applications, or equivalent options, key selection criteria include its 150 V V_CEO rating, low leakage (I_CBO ≤ 50 nA), stable h_FE across temperature, TO-92 mechanical compatibility, and Pb-free tape-and-reel packaging for automated assembly.

Technical Context

The 2N5401RLRAG operates as a general-purpose PNP bipolar junction transistor optimized for medium-voltage, medium-current linear amplification and active-load switching. Its design emphasizes high breakdown voltage (V_CBO = 160 V, V_CEO = 150 V) and low noise (NF ≤ 8.0 dB at I_C = 250 µA), making it suitable for preamplifier and level-shifting circuits where collector swing exceeds 100 V.

Thermal performance is defined by R_JA = 200 °C/W (ambient) and R_JC = 83.3 °C/W (case), with guaranteed operation from −55°C to +150°C junction temperature. The device exhibits predictable DC current gain variation across I_C (1–100 mA) and temperature (−55°C to +125°C), per Figure 1 in the official datasheet.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	150 Vdc - Supports collector-emitter swings up to 150 V without breakdown, enabling use in high-side switch and HV amplifier stages.
I_C (max)	600 mAdc - Continuous collector current rating allows robust biasing in Class-A amplifiers and relay drivers.
h_FE	50–240 - Wide DC current gain range ensures reliable bias point stability across production lots and operating conditions.
f_T	100–300 MHz - Sufficient unity-gain bandwidth for audio and low-MHz RF amplification, including IF stages and oscillator buffers.
V_CE(sat)	≤ 0.5 V @ I_C/I_B = 10 - Low saturation voltage minimizes power loss and heating in switching applications.
C_obo	≤ 6.0 pF @ V_CB = 10 V - Low output capacitance preserves high-frequency response and reduces Miller effect in common-emitter configurations.

Pinout & Package

2N5401RLRAG uses the industry-standard TO-92 (Case 29-11) plastic package with straight leads and Pb-free finish. Dimensions comply with ANSI Y14.5M and ASME Y14.5M standards; typical outline includes body height ~4.7 mm, lead pitch 1.27 mm, and seated plane reference per datasheet Figure.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current source terminal for PNP operation	Connected to most positive rail in common-emitter configuration; sets bias polarity and current direction.
2 (Base)	Control electrode for minority-carrier injection	Receives forward-biased current to modulate collector current; requires external current-limiting resistor in most designs.
3 (Collector)	Current sink terminal	Typically tied to load and negative supply; handles full output current and voltage swing up to 150 V.

Key Features

Feature	Design Value
Pb-free TO-92 package	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profiles for lead-free assembly.
High V_CBO rating	160 Vdc withstand enables use in cascode amplifiers and high-impedance sensing nodes with elevated common-mode voltage.
Low I_CBO leakage	≤ 50 nA @ V_CB = 120 V - Ensures stable DC bias in high-temperature environments (up to +100°C ambient).
Guaranteed h_FE range	50–240 at I_C = 1–50 mA - Reduces need for gain-bin sorting in production and simplifies bias network design.

Applications

Audio Preamplifier Stage	High-Voltage Level Shifter
Use Scenario: Amplifying low-level microphone or phono signals before ADC input in professional audio equipment. IC Role / Device Role / Timing Role: PNP small-signal amplifier in common-emitter configuration with emitter degeneration for linearity. Use Value: 150 V V_CEO supports rail-to-rail swing in ±12 V or ±15 V supplies; low NF ≤ 8.0 dB preserves SNR in first gain stage.	Use Scenario: Translating logic-level signals to drive high-side MOSFET gates in industrial motor control inverters. IC Role / Device Role / Timing Role: Active pull-up level shifter with fast turn-on/off times (t_r, t_f < 10 ns per test circuit). Use Value: V_CE(sat) ≤ 0.5 V ensures minimal voltage drop; 300 MHz f_T supports clean edge transitions up to ~10 MHz.
Relay Driver Circuit	Current Mirror Reference
Use Scenario: Switching 12–48 V DC relays in PLC I/O modules with microcontroller GPIO interface. IC Role / Device Role / Timing Role: Medium-power PNP switch in common-emitter mode with base current limiting. Use Value: 600 mA I_C rating accommodates relay coil currents up to 500 mA; TO-92 footprint enables compact board layout.	Use Scenario: Building matched current sources in precision analog front-ends for sensor conditioning ICs. IC Role / Device Role / Timing Role: Active component in Wilson or Widlar current mirror topologies requiring stable h_FE. Use Value: Tight h_FE spread (50–240) and low thermal drift support <1% current matching over −40°C to +85°C.

Audio Preamplifier Stage

High-Voltage Level Shifter

Use Scenario: Amplifying low-level microphone or phono signals before ADC input in professional audio equipment.

IC Role / Device Role / Timing Role: PNP small-signal amplifier in common-emitter configuration with emitter degeneration for linearity.

Use Value: 150 V V_CEO supports rail-to-rail swing in ±12 V or ±15 V supplies; low NF ≤ 8.0 dB preserves SNR in first gain stage.

Use Scenario: Translating logic-level signals to drive high-side MOSFET gates in industrial motor control inverters.

IC Role / Device Role / Timing Role: Active pull-up level shifter with fast turn-on/off times (t_r, t_f < 10 ns per test circuit).

Use Value: V_CE(sat) ≤ 0.5 V ensures minimal voltage drop; 300 MHz f_T supports clean edge transitions up to ~10 MHz.

Relay Driver Circuit

Current Mirror Reference

Use Scenario: Switching 12–48 V DC relays in PLC I/O modules with microcontroller GPIO interface.

IC Role / Device Role / Timing Role: Medium-power PNP switch in common-emitter mode with base current limiting.

Use Value: 600 mA I_C rating accommodates relay coil currents up to 500 mA; TO-92 footprint enables compact board layout.

Use Scenario: Building matched current sources in precision analog front-ends for sensor conditioning ICs.

IC Role / Device Role / Timing Role: Active component in Wilson or Widlar current mirror topologies requiring stable h_FE.

Use Value: Tight h_FE spread (50–240) and low thermal drift support <1% current matching over −40°C to +85°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MPSA92	V_CEO = 300 V, h_FE = 25–100, TO-92 package	Higher breakdown but lower and narrower h_FE range; less suitable for low-noise gain stages	Select when >200 V collector swing is required and gain tolerance >75% is acceptable.
BC557B	V_CEO = 45 V, h_FE = 200–450, TO-92 package	Lower voltage rating limits use to ≤45 V rails; higher h_FE improves bias stability at low I_C	Choose for low-voltage, high-gain applications where 150 V capability is unnecessary.

Compared with MPSA92 and BC557B, the 2N5401RLRAG uniquely balances 150 V breakdown, moderate h_FE spread, and low noise-making it optimal for mid-range HV analog signal conditioning where both voltage headroom and gain predictability matter.

Availability

2N5401RLRAG is available at Aetrix Electronics and suitable for audio preamplifier stages, high-voltage level shifters, and relay driver circuits requiring stable component supply, consistent TO-92 mechanical fit, and Pb-free compliance.

Supply support for 2N5401RLRAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, medical, and IoT applications.

The 2N5401RLRAG belongs to onsemi's legacy discrete transistor portfolio, designed specifically for general-purpose PNP amplification and switching in cost-sensitive, reliability-critical analog systems.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5401RLRAG?

The 2N5401RLRAG has a maximum collector-emitter voltage rating (V_CEO) of 150 Vdc, verified under test condition I_C = 1.0 mAdc and I_B = 0. This rating defines the absolute upper limit for voltage applied between collector and emitter while maintaining safe, non-destructive operation. Exceeding this value risks avalanche breakdown and permanent device failure. The 2N5401RLRAG must be operated within this limit in all circuit configurations.

Does the 2N5401RLRAG have Pb-free construction?

Yes, the 2N5401RLRAG is explicitly marked as Pb-free in the onsemi datasheet and ordering information. The "G" suffix in the part number (2N5401RLRAG) denotes compliance with RoHS Directive 2011/65/EU. Its TO-92 package uses lead-free terminations and meets JEDEC J-STD-020 moisture sensitivity and reflow profile requirements. The 2N5401RLRAG is suitable for lead-free soldering processes without modification.

What is the typical DC current gain (h_FE) range for the 2N5401RLRAG at 10 mA collector current?

At I_C = 10 mAdc and V_CE = 5.0 Vdc, the 2N5401RLRAG exhibits a guaranteed h_FE range of 60 to 240, per the Electrical Characteristics table in the official datasheet. This range reflects production lot variation and ensures design margin across temperature and aging. The 2N5401RLRAG's h_FE remains stable across −55°C to +125°C, as shown in Figure 1, supporting robust bias network design.

Can the 2N5401RLRAG be used in switching applications?

Yes, the 2N5401RLRAG is qualified for switching use, with documented parameters including V_CE(sat) ≤ 0.5 V (I_C = 50 mAdc, I_B = 5.0 mAdc), t_r/t_f < 10 ns (per Figure 6 test circuit), and safe operating area validated up to 100 mA/120 V in single-pulse mode. Its low saturation voltage and fast transition times make the 2N5401RLRAG effective in medium-speed digital logic interfaces and relay drivers.

What is the thermal resistance from junction to ambient (R_JA) for the 2N5401RLRAG in free air?

The thermal resistance from junction to ambient (R_JA) for the 2N5401RLRAG is 200 °C/W when mounted on a standard PCB with no heatsink and measured at T_A = 25°C. This value assumes the device is soldered in a typical TO-92 footprint with minimal copper pour. Derating is required above 25°C ambient: 5.0 mW/°C reduction in power dissipation. The 2N5401RLRAG's R_JC is 83.3 °C/W, indicating efficient heat transfer to the case when heatsinking is applied.

2N5401RLRAG Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body, Formed Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 600 mA

Voltage - Collector Emitter Breakdown (Max):: 150 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 10mA, 5V

Power - Max:: 625 mW

Frequency - Transition:: 300MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92 (TO-226)

2N5401RLRAG FAQ

1.How can I place an order for 2N5401RLRAG through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5401RLRAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5401RLRAG reliable?

The price and inventory of 2N5401RLRAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5401RLRAG is usually 5 days.

3.What payment methods are accepted for 2N5401RLRAG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5401RLRAG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5401RLRAG?

2N5401RLRAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5401RLRAG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5401RLRAG?

For technical support, including 2N5401RLRAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5401RLRAG requirements.

6.How does Aetrix verify that 2N5401RLRAG is sourced from the original manufacturer or authorized distributors?

All 2N5401RLRAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5401RLRAG meets industry standards.

7.What is the process for return or replacement of 2N5401RLRAG?

All 2N5401RLRAG units undergo pre-shipment inspection (PSI). If there is an issue with 2N5401RLRAG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5401RLRAG part is unused and in its original packaging.

Return procedure for 2N5401RLRAG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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