Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N5401RLRMG

Name: 2N5401RLRMG
Brand: onsemi
SKU: 2N5401RLRMG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: 2N5401RLRMG

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body, Formed Leads

Datasheet:: 2N5401RLRMG.pdf

Description:: TRANS PNP 150V 0.6A TO92

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,755

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

2N5401RLRMG from onsemi is a PNP silicon small-signal amplifier transistor in TO-92 package, rated for V_CEO = 150 V, I_C = 600 mA, P_D = 625 mW at T_A = 25°C, with h_FE = 50–240 (at I_C = 1–50 mA), and f_T = 300 MHz - used in high-voltage linear amplification and switching stages of discrete audio preamps and power supply control circuits.

For engineers reviewing the 2N5401RLRMG datasheet, pinout, applications, or equivalent options, key selection criteria include breakdown voltage margin, DC current gain consistency across collector current range, thermal resistance (R_JA = 200°C/W), saturation voltage behavior under defined I_C/I_B ratios, and Pb-free TO-92 tape-and-ammo packaging compliance.

Technical Context

This PNP bipolar junction transistor operates in active, saturation, and cutoff regions with verified V_(BR)CEO = 150 V and V_(BR)CBO = 160 V, supporting high-side switching and voltage amplification where reverse polarity and elevated collector-emitter standoff are required. Its f_T = 300 MHz and h_fe = 40–200 (at 1 kHz) confirm suitability for audio-frequency small-signal gain stages.

Thermal design relies on R_JA = 200°C/W and R_JC = 83.3°C/W, with derating of 5.0 mW/°C above 25°C ambient. The device exhibits V_CE(sat) ≤ 0.5 V at I_C = 50 mA / I_B = 5 mA and V_BE(sat) ≤ 1.0 V under same conditions - critical for low-loss switching in discrete regulator feedback paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	150 Vdc - supports operation in ≥120 V rail applications without breakdown risk.
I_C	600 mAdc continuous - enables drive capability for medium-current loads like relay coils or driver-stage collectors.
h_FE	50–240 (I_C = 1–50 mA, V_CE = 5 V) - ensures stable biasing across production spread in amplifier designs.
f_T	300 MHz - validates usable gain up to mid-VHF range, e.g., RF detector or wideband preamp stages.
R_JA	200°C/W - defines minimum heatsinking requirement for sustained 625 mW dissipation at ambient.
V_CE(sat)	≤0.5 V at I_C/I_B = 10 - minimizes conduction loss in saturated-switch configurations.
C_obo	6.0 pF at V_CB = 10 V - limits Miller capacitance impact on high-frequency stability.

Pinout & Package

Package: TO-92 (Case 29-11), Pb-free, tape-and-ammo box (2000 units). Standard lead configuration with emitter (pin 1), base (pin 2), collector (pin 3).

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current source terminal for PNP operation	Connected to most positive rail in common-base or common-collector configurations; sets reference for V_EB biasing.
2 (Base)	Control input for minority-carrier injection	Requires negative-going drive relative to emitter to turn on; governs I_C via h_FE-scaled I_B.
3 (Collector)	Output current sink terminal	Carries load current to ground or lower-potential node; withstands up to 150 V reverse bias when off.

Key Features

Feature	Design Value
High V_CEO rating	150 V - allows direct use in 100 V+ supply rails without series protection or voltage division.
Wide h_FE range with test-condition clarity	Min 50 @ I_C = 1 mA, max 240 @ I_C = 50 mA - supports robust bias network design across operating points.
Low V_CE(sat) at practical drive levels	≤0.5 V @ I_C = 50 mA / I_B = 5 mA - reduces power loss and self-heating in switching applications.
Pb-free TO-92 packaging	RoHS-compliant construction with 2000-unit ammo box delivery - meets modern manufacturing and environmental requirements.
Specified noise figure	NF = 8.0 dB @ I_C = 250 µA - quantifies signal-to-noise performance in low-level analog front-end stages.

Applications

Audio Preamp Stage	High-Voltage Switch Driver
Use Scenario: Discrete two-stage PNP-NPN complementary preamplifier in tube-emulation guitar effects pedals. IC Role / Device Role / Timing Role: PNP small-signal voltage amplifier providing phase-inverted gain before output stage. Use Value: V_CEO = 150 V headroom prevents clipping during transient peaks; h_FE consistency ensures matched channel gain tracking.	Use Scenario: High-side switch controlling 80 V DC solenoid in industrial valve actuation module. IC Role / Device Role / Timing Role: PNP switch enabling ground-referenced control logic to activate positive-rail loads. Use Value: V_CBO = 160 V and V_CEO = 150 V exceed system rail, eliminating need for external clamping diodes.
Linear Voltage Regulator Error Amp	Discrete Power Supply Feedback Loop
Use Scenario: Error amplifier in adjustable 0–60 V linear bench supply using LM317-based topology. IC Role / Device Role / Timing Role: PNP differential pair input stage comparing reference and output voltages. Use Value: Low NF = 8.0 dB and stable h_fe at 1 kHz improve regulation accuracy and ripple rejection.	Use Scenario: Current-sense amplifier input stage in isolated flyback SMPS feedback path. IC Role / Device Role / Timing Role: PNP transistor amplifying optocoupler output current to drive TL431 reference input. Use Value: C_obo = 6.0 pF minimizes phase shift in loop compensation; f_T = 300 MHz ensures bandwidth margin.

Audio Preamp Stage

High-Voltage Switch Driver

Use Scenario: Discrete two-stage PNP-NPN complementary preamplifier in tube-emulation guitar effects pedals.

IC Role / Device Role / Timing Role: PNP small-signal voltage amplifier providing phase-inverted gain before output stage.

Use Value: V_CEO = 150 V headroom prevents clipping during transient peaks; h_FE consistency ensures matched channel gain tracking.

Use Scenario: High-side switch controlling 80 V DC solenoid in industrial valve actuation module.

IC Role / Device Role / Timing Role: PNP switch enabling ground-referenced control logic to activate positive-rail loads.

Use Value: V_CBO = 160 V and V_CEO = 150 V exceed system rail, eliminating need for external clamping diodes.

Linear Voltage Regulator Error Amp

Discrete Power Supply Feedback Loop

Use Scenario: Error amplifier in adjustable 0–60 V linear bench supply using LM317-based topology.

IC Role / Device Role / Timing Role: PNP differential pair input stage comparing reference and output voltages.

Use Value: Low NF = 8.0 dB and stable h_fe at 1 kHz improve regulation accuracy and ripple rejection.

Use Scenario: Current-sense amplifier input stage in isolated flyback SMPS feedback path.

IC Role / Device Role / Timing Role: PNP transistor amplifying optocoupler output current to drive TL431 reference input.

Use Value: C_obo = 6.0 pF minimizes phase shift in loop compensation; f_T = 300 MHz ensures bandwidth margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MPSA92	V_CEO = 300 V, h_FE = 25–250, f_T = 50 MHz, TO-92	Higher voltage rating but lower f_T; less suitable for >10 MHz signal paths	Select when absolute breakdown margin >200 V is required and bandwidth <50 MHz suffices.
BC557B	V_CEO = 45 V, h_FE = 200–450, f_T = 100 MHz, TO-92	Lower voltage rating, higher h_FE, reduced f_T; not safe for >50 V rails	Choose only for low-voltage (<40 V), high-gain, cost-sensitive consumer circuits with no HV stress.

Compared with MPSA92 and BC557B, the 2N5401RLRMG delivers optimal balance of 150 V standoff, 300 MHz bandwidth, and production-grade h_FE spread - making it preferred for industrial audio, HV switching, and precision linear regulation where both voltage headroom and frequency response matter.

Availability

2N5401RLRMG is available at Aetrix Electronics and suitable for industrial power supply feedback loops, discrete audio amplifier stages, and high-voltage switching circuits requiring stable component supply, RoHS-compliant packaging, and consistent parametric performance across temperature.

Supply support for 2N5401RLRMG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The 2N5401RLRMG belongs to onsemi's legacy discrete transistor portfolio designed for general-purpose PNP amplification and switching - emphasizing ruggedness, parameter stability, and manufacturability in TO-92 form factor.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5401RLRMG?

The 2N5401RLRMG has a guaranteed minimum V_(BR)CEO of 150 Vdc at I_C = 1.0 mAdc and I_B = 0. This rating is validated per onsemi's December 2005 datasheet revision and applies to continuous DC operation under specified thermal conditions. Exceeding this voltage risks irreversible breakdown.

Is the 2N5401RLRMG pin-compatible with the 2N5400 series?

Yes - the 2N5401RLRMG shares identical TO-92 pinout (emitter-pin 1, base-pin 2, collector-pin 3) and mechanical footprint with all 2N5400/2N5401 variants, including 2N5400RLRP and 2N5401RLRA. However, electrical parameters differ: 2N5401RLRMG offers higher V_CEO (150 V vs. 120 V) and V_CBO (160 V vs. 130 V) than the 2N5400 family.

What is the thermal resistance junction-to-ambient for the 2N5401RLRMG?

The 2N5401RLRMG has a specified R_JA of 200°C/W when mounted on standard FR-4 PCB with no heatsink. This value assumes natural convection and defines the temperature rise per milliwatt dissipated. Derating begins at 5.0 mW/°C above 25°C ambient, limiting usable power to ~375 mW at 85°C ambient.

Does the 2N5401RLRMG meet RoHS requirements?

Yes - the "G" suffix in 2N5401RLRMG explicitly denotes Pb-free construction per onsemi's ordering nomenclature. It complies with EU RoHS Directive 2011/65/EU and is supplied in tape-and-ammo packaging with full material declarations available upon request.

What is the typical transition frequency (f_T) of the 2N5401RLRMG?

The 2N5401RLRMG has a typical f_T of 300 MHz, measured at I_C = 10 mAdc, V_CE = 10 Vdc, and f = 100 MHz. This value is confirmed in the "Small-Signal Characteristics" table of the official datasheet and reflects usable gain-bandwidth product for RF and wideband analog design.

2N5401RLRMG Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body, Formed Leads

Packaging:: Tape & Box (TB)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 600 mA

Voltage - Collector Emitter Breakdown (Max):: 150 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 10mA, 5V

Power - Max:: 625 mW

Frequency - Transition:: 300MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92 (TO-226)

2N5401RLRMG FAQ

1.How can I place an order for 2N5401RLRMG through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5401RLRMG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5401RLRMG reliable?

The price and inventory of 2N5401RLRMG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5401RLRMG is usually 5 days.

3.What payment methods are accepted for 2N5401RLRMG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5401RLRMG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5401RLRMG?

2N5401RLRMG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5401RLRMG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5401RLRMG?

For technical support, including 2N5401RLRMG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5401RLRMG requirements.

6.How does Aetrix verify that 2N5401RLRMG is sourced from the original manufacturer or authorized distributors?

All 2N5401RLRMG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5401RLRMG meets industry standards.

7.What is the process for return or replacement of 2N5401RLRMG?

All 2N5401RLRMG units undergo pre-shipment inspection (PSI). If there is an issue with 2N5401RLRMG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5401RLRMG part is unused and in its original packaging.

Return procedure for 2N5401RLRMG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…